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| savantic semiconductor product specification silicon npn power transistors BUT56AF d escription with to-220fa package high voltage;high speed high power dissipation applications switching mode power supply pinning pin description 1 base 2 collector 3 emitter absolut maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 10 a i bm base current-peak 4 a p tot total power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUT56AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =100ma ;l c =125mh 450 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 2.0 v i ces collector cut-off current v ce =1000v; v be =0 t j =150 1.0 2.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 45 h fe-2 dc current gain i c =3a ; v ce =2v 4 f t transition frequency i c =0.5a ;v ce =10v;f=1.0mhz 10 mhz switching times t off turn-off time 4 s t f fall time i c =4a ;i b1 =-i b2 =1.25a t p =20s 1 s savantic semiconductor product specification 3 silicon npn power transistors BUT56AF package outline fig.2 outline dimensions (unindicated tolerance: 0.15mm) |
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