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| savantic semiconductor product specification silicon npn power transistors 2N6500 description with to-66 package wide area of operation high sustaining voltage applications for high-speed switching and linear- amplifier applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 90 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cm collector current-peak 5 a i b base current 3 a p t total power dissipation t c =25 35 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 5.0 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6500 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2 a ; i b =0 90 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.5 v v besat base -emitter saturation voltage i c =3a; i b =0.3a 2.5 v i cev collector cut-off current v ce =110v;v be(off) =-1.5v t c =150 5.0 10 ma i ceo collector cut-off current v ce =70v; i b =0 5.0 ma i ebo emitter cut-off current v eb =7v; i c =0 25 ma h fe dc current gain i c =3a ; v ce =2v 15 60 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 175 pf savantic semiconductor product specification 3 silicon npn power transistors 2N6500 package outline fig.2 outline dimensions |
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