SFH6943A document number 81687 rev. 1.0, 10-jan-07 vishay semiconductors www.vishay.com 1 i179077 a1 a2 com. c3 a4 a5 10 e1 9e2 8 com. c 7e3 6e4 optocoupler, phototransistor output, sot-223/10, quad channel features ? transistor optocoupler in sot-223/10 package ? end stackable, 1.27 mm spacing ? low current input ? good ctr linearity versus forward current ? minor ctr degradation ? high collector-emitter voltage, v ceo = 70 v ? low coupling capacitance ? high common mode transient immunity ? isolation test voltage: 1768 v rms ? lead-(pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code v ? csa 93751 applications ? telecommunication ?smt ? pcmcia ? instrumentation description the SFH6943A is a four channel mini-optocoupler suitable for high density packaged pcb application. it has a minimum of 1768 v rms isolation from input to output. the device consists of four phototransistors as detectors. each channel is individually controlled. the optocoupler is housed in a sot-223/10 package. all the cathodes of the input leds and all the collec- tors of the output transistors are common enabling a pin count reduction from 16 pins to 10 pins-a signifi- cant space savings as compared to four channels that are electrically isolated individually. order information part remarks SFH6943A-2 ctr 63 - 200 %, smd-10 SFH6943A-3 ctr 100 - 320 %, smd-10 SFH6943A-4 ctr 160 - 500 %, smd-10 e3
www.vishay.com 2 document number 81687 rev. 1.0, 10-jan-07 SFH6943A vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 3v dc forward current i f 5ma surge forward current t p 10 s i fsm 100 ma total power dissipation p diss 10 mw parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-collector voltage v ec 7v collector current i c 10 ma surge collector current t p < 1 ms i fsm 20 ma total power dissipation p diss 20 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector, refer to climate din 40046, part 2, nov. 74) t = 1 sec. v iso 1768 v rms creepage 4mm clearance 4mm comparative tracking index per din iec 112/vde0303, part 1 175 isolation resistance v io = 100 v, t amb = 25 c r io 10 11 v io = 100 v, t amb = 100 c r io 10 12 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature, dip soldering plus reflow soldering processes t = 10 sec. max t sld 260 c
SFH6943A document number 81687 rev. 1.0, 10-jan-07 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio switching characteristics parameter test condition symbol min ty p. max unit forward voltage i f = 5 ma v f 1.25 v reverse current v r = 3 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 5pf thermal resistance r thja 1000 k/w parameter test condition symbol min ty p. max unit collector-emitter voltage i ce = 10 a v ceo 70 v emitter-collector voltage i ec = 10 a v eco 7v collector-emitter capacitance v ce = 5 v, f = 1 mhz c ce 6pf thermal resistance r thja 500 k/w collector-emitter leakage current v ce = 10 v i ceo 50 na parameter test condition symbol min ty p. max unit coupling capacitance c c 1pf parameter te s t c o n d i t i o n part symbol min ty p. max unit coupling transfer ratio i f = 1 ma, v ce = 1.5 v SFH6943A-2 i e /i f 63 200 % SFH6943A-3 i e /i f 100 320 % SFH6943A-4 i e /i f 160 500 % i f = 0.5 ma, v cc = 5 v SFH6943A-2 i e /i f 32 100 % SFH6943A-3 i e /i f 50 160 % SFH6943A-4 i e /i f 80 250 % parameter test condition symbol min ty p. max unit turn-on time i e = 2 ma, r e = 100 , v cc = 5 v t on 3s rise time i e = 2 ma, r e = 100 , v cc = 5 v t r 2.6 s turn-off time i e = 2 ma, r e = 100 , v cc = 5 v t off 3.1 s fall time i e = 2 ma, r e = 100 , v cc = 5 v t f 2.8 s
www.vishay.com 4 document number 81687 rev. 1.0, 10-jan-07 SFH6943A vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 1. switching times (typ.) figure 2. switching waveform figure 3. led current vs. led voltage isfh6943_01 v o v cc =5 v r e =100 f=10 khz d f =50 % i f i e = 2 ma isfh6943_02 v 0 i f t r t f t off t o n isfh6943_03 0. 8 0.9 1 1.1 1.2 1.3 1.4 10 1 10 0 10 -1 10 -2 v f / v 25 50 - 25 8 5 i f /ma v f =f(i f ) figure 4. non-saturated current transfer figure 5. transistor capacitances (typ.) figure 6. collector-emitter leakage current (typ.) isfh6943_04 n ctr i f /a 2.0 1. 8 1.6 1.4 1.2 1.0 0. 8 0.6 0.4 0.2 0 10 -4 10 -3 10 -2 n ormalized to i f = 1 ma, n ctr=f(i f ) v ce = 1.5 v i f =1ma isfh6943_05 c ce 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 c ce / p f 10 -2 10 -1 10 0 10 1 10 2 v ce / v f = 1 mhz, c ce =f( v ce ) isfh6943_06 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 1020 3040 50 6070 v ce / v i ceo /na i f = 0, i ceo = f (v ce )
SFH6943A document number 81687 rev. 1.0, 10-jan-07 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) figure 7. permissible forward current diode figure 8. permissible power dissipation isfh6943_07 8 7 6 5 4 3 2 1 0 i f /ma t a /c 0 10203040506070 8 090100 i f = f isfh6943_0 8 30 25 20 15 10 5 0 p tot /m w t a /c 0 10203040506070 8 090100 transistor diode p tot = f (t a ) figure 9. figure 10. transistor output characteristics isfh6943_09 10 3 10 2 10 1 10 0 t/ u s 10 2 10 3 10 4 10 5 r l /o hm t off t f t on t r i f = 1 ma, v cc = 5 v , t on , t r , t off , t t = f (r l ) i ce = 1 ( v ce ,i f ) isfh6943_10 25 20 15 10 5 0 i ce /ma 10 -2 10 1 10 -1 10 2 10 0 v ce / v i f = 1 ma i f = 2 ma i f = 3 ma i f = 4 ma i f = 5 ma r 0.005 (0.13) 0.050 (1.27) 0.026 (0.66) 0.024 (0.61) 0.216 (5.49) 0.296 (7.52) 0.053 (1.35) 0.040 (1.02) 0.010 (0.25) i17 8 044 0.063 0.004 (1.60 0.10) 0.01 8 (0.46) 0.035 (0.90) 0.016 (0.41) iso method a 0.043 (1.09) 10 7 0.002 + 0.002 ? 0.001 (0.05 + 0.05 ? 0.03) 0.256 0.004 (6.50 0.10) 0.200 0.005 (5. 8 0 0.13) 10 0.004(0.10) max. 0.020 (0.51) min. 7 45 0.010r (0.25) 0?7 0.01 (0.25) r 0.020 0.004 (0.51 0.10) 0.13 8 0.004 (3.51 0.10) 0.276 0.00 8 (7.01 0.20)
www.vishay.com 6 document number 81687 rev. 1.0, 10-jan-07 SFH6943A vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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