inchange semiconductor product specification silicon npn power transistors BUL6825 description ? ? with to-220c package ? high voltage ,high speed applications ? relay drivers ? inverters ? switching regulators ? deflection circuits pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 9 v i c collector current (dc) 4 a i cm collector current-peak 8 a i b base current 2 a i bm base current-peak 4 a t a =25 ?? 2 p d total power dissipation t c =25 ?? 75 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.67 ??/w
inchange semiconductor product specification 2 silicon npn power transistors BUL6825 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =10ma ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.2a 0.5 v v cesat-2 collector-emitter saturation voltage i c =2a ;i b =0.5a t c =100 ?? 0.6 1.0 v v cesat-3 collector-emitter saturation voltage i c =4a ;i b =1a 1.0 v v besat-1 base-emitter saturation voltage i c =1a; i b =0.2a 1.2 v v besat-2 base-emitter saturation voltage i c =2a ;i b =0.5a t c =100 ?? 1.6 1.5 v i cbo collector cut-off current v cb =700v ;i e =0 t c =100 ?? 1.0 5.0 ma i ebo emitter cut-off current v eb =9v; i c =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 60 h fe-2 dc current gain i c =2a ; v ce =5v 8 40 f t transition frequency i c =0.5a ; v ce =5v 4 mhz c ob collector outoput capacitance f=1mhz ; v cb =10v 65 pf switching times resistive load t d delay time 0.1 | s t r rise time 0.7 | s t s storage time 4.0 | s t f fall time v cc =125v ,i c =2a i b1 =- i b2 =0.4a t p =25 | s duty cycle ? 1% 0.9 | s
inchange semiconductor product specification 3 silicon npn power transistors BUL6825 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)
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