maximum ratings: (t a =25c unless otherwise noted) symbol units peak repetitive reverse voltage v rrm 40 v dc blocking voltage v r 40 v rms reverse voltage v r(rms) 28 v average forward current (t a =75c) i o 10 a peak forward surge current (8.3ms) i fsm 125 a operating and storage junction temperature t j ,t stg -65 to +150 c electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions max units i r v r =40v 3.0 ma i r v r =40v, t a =100c 20 ma v f i f =5.0a 0.55 v *v f i f =10a 0.60 v * with pin 1 and pin 3 connected together. CZSH10-40CN surface mount dual, common cathode silicon schottky power rectifier 10 amp, 40 volts sot-223c case central semiconductor corp. tm r1 (22-july 2004) description: the central semiconductor CZSH10-40CN ia a dual common cathode 10 amp surface mount silicon schottky rectifier package in a sot-223c case. the new sot-223c case has a cut center lead for optional mounting pad connection of the two anodes for use as a single 10 amp device. this device has been designed for use in all types of commercial, industrial, entertainment, computer and automotive applications, which require a high current device. marking code: full part number
central semiconductor corp. tm sot-223c case - mechanical outline CZSH10-40CN surface mount dual, common cathode silicon schottky power rectifier 10 amp, 40 volts r1 (22-july 2004) min max min max a 0 7 0 10 b 0.063 0.067 1.50 1.80 c 0.45 --- d 0.001 0.004 0.00 0.10 e f 0.009 0.013 0.23 0.35 g 0.248 0.264 6.30 6.70 h 0.114 0.122 2.90 3.10 j 0.130 0.146 3.30 3.70 k 0.264 0.287 6.70 7.30 l 0.024 0.031 0.60 0.85 m n p - 0.025 - 0.64 sot-223c (rev: r1) 2.30 15 4.60 dimensions symbol millimeters inches 0.022 15 0.091 0.181 marking code: full part number pin 2 and pin 4 are common. lead code: 1) anode d1 2) cathode d1, d2 3) anode d2 4) cathode d1, d2 optional mounting pad layout for single 10 amp configuration.
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