buz80a BUZ80AFI n - channel enhancement mode power mos transistor n typical r ds(on) = 2.5 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low input capacitance n low gate charge n application oriented characterization applications n high current, high speed switching n switch mode power supplies (smps) n consumer and industrial lighting n dc-ac inverters for welding equipment and uninterruptible power supply (ups) internal schematic diagram 1 2 3 to-220 isowatt220 april 1993 type v dss r ds(on) i d buz80a BUZ80AFI 800 v 800 v <3 w <3 w 3.8 a 2.4 a absolute maximum ratings symbol parameter value unit buz80a BUZ80AFI v ds drain-source voltage (v gs =0) 800 v v dg r drain- gate voltage (r gs =20k w )800v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c3.82.4a i d drain current (continuous) at t c =100 o c2.3 1.4a i dm ( ? ) drain current (pulsed) 15 15 a p tot total dissipation at t c =25 o c 100 40 w derating factor 0.8 0.32 w/ o c v iso insulation withstand voltage (dc) ? 2000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area 1 2 3 1/10
thermal data to-220 isowatt220 r thj-case thermal resistance junction-case max 1.25 3.12 o c/w r thj-amb r t hc- sin k t l thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 62.5 0.5 300 o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d <1%) 3.8 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 200 mj e ar repetitive avalanche energy (pulse width limited by t j max, d <1%) 8mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d <1%) 2.2 a electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs = 0 800 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds = max rating x 0.8 t c =125 o c 250 1000 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d =1ma 2 3 4 v r ds(on) static drain-source on resistance v gs =10v i d = 1.7 a v gs =10v i d =1.7a t c =100 o c 2.5 3 6 w w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10v 3.8 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =1.7a 1 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 1100 150 55 pf pf pf buz80a/BUZ80AFI 2/10
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =30v i d =2.3a r g =50 w v gs =10v (see test circuit, figure 3) 65 150 90 200 ns ns (di/dt) on turn-on current slope v dd =600v i d =3.8a r g =50 w v gs =10v (see test circuit, figure 5) 80 110 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v i d =5a v gs =10v 55 8 26 70 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =600v i d =3.8a r g =50 w v gs =10v (see test circuit, figure 5) 110 140 150 145 190 200 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 3.8 15 a a v sd ( * ) forward on voltage i sd =7.6a v gs =0 2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =3.8a di/dt=100a/ m s v r =100v t j = 150 o c (see test circuit, figure 5) 500 4.3 17 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating areas for to-220 package safe operating areas for isowatt220 package buz80a/BUZ80AFI 3/10
thermal impedeance for to-220 package derating curve for to-220 package output characteristics thermal impedance for isowatt220 package derating curve for isowatt220 package transfer characteristics buz80a/BUZ80AFI 4/10
transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations normalized on resistance vs temperature normalized gate threshold voltage vs temperature buz80a/BUZ80AFI 5/10
turn-on current slope turn-off drain-source voltage slope cross-over time switching safe operating area accidental overload area source-drain diode forward characteristics buz80a/BUZ80AFI 6/10
fig. 2: unclamped inductive waveforms fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode reverse recovery time fig. 1: unclamped inductive load test circuits buz80a/BUZ80AFI 7/10
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c buz80a/BUZ80AFI 8/10
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.4 0.7 0.015 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 isowatt220 mechanical data p011g buz80a/BUZ80AFI 9/10
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a buz80a/BUZ80AFI 10/10
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