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  ? byt 12pi-1000 fast recovery rectifier diode very high reverse voltage capability very low reverse recovery time very low switching losses low noise turn-off switching insulated: capacitance 7pf suitable applications free wheeling diode in converters and motor control circuits rectifier in s.m.p.s. august 1998 ed : 1a isolated to220ac (plastic) insulating voltage 2500 v rms symbol parameter value unit v rrm repetitive peak reverse voltage 1000 v v rsm non repetitive peak reverse voltage 1000 v i frm repetive peak forward current t p 10 m s 150 a i f (rms) rms forward current 25 a i f (av) average forward current t c = 50 c d = 0.5 12 a i fsm surge non repetitive forward current t p = 10ms sinusoidal 75 a p power dissipation t c = 50 c 25 w t stg t j storage and junction temperature range - 40 to + 150 - 40 to + 150 c absolute maximum ratings symbol test conditions value unit r th (j - c) junction-case 4 c/w thermal resistance k a 1/5
synbol test conditions min. typ. max. unit i r t j = 25 c v r = v rrm 50 m a t j = 100 c 2.5 ma v f t j = 25 c i f = 12a 1.9 v t j = 100 c 1.8 static characteristics electrical characteristics symbol test conditions min. typ. max. unit t rr t j = 25 ci f = 1a di f /dt = - 15a/ m s v r = 30v 155 ns i f = 0.5a i r = 1a i rr = 0.25a 65 recovery characteristics symbol test conditions min. typ. max. unit t irm di f /dt = - 50a/ m s v cc = 200 v i f = 12a l p 0.05 m h t j = 100 c see figure 11 200 ns di f /dt = - 100a/ m s 120 i rm di f /dt = -50a/ m s 7.8 a di f /dt = - 100a/ m s 9 turn-off switching characteristics (without series inductance) symbol test conditions min. typ. max. unit c = v rp v cc t j = 100 c v cc = 200v i f = i f (av) di f /dt = - 12a/ m s l p = 12 m h see figure 12 4.5 turn-off overvoltage coefficient (with series inductance) to evaluate the conduction losses use the following equations: v f = 1.47 + 0.026 i f p = 1.47 x if (av) + 0.026 i f 2 (rms) figure 1. low frequency power losses versus average current figure 2. peak current versus form factor 2/5 byt 12pi-1000
figure 3. non repetitive peak surge current versus overload duration figure 4. thermal impedance versus pulse width figure 5. voltage drop versus forward current figure 6. recovery charge versus di f /d t- figure 7. recovery time versus di f /d t- figure 8. peak reverse current versus di f /d t- 3/5 byt 12pi-1000
4/5 figure 9. peak forward voltage versus di f /d t- figure 10. dynamic parameters versus junction temperature. figure 11. turn-off switching characteristics (without series inductance). figure 12. turn-off switching characteristics (with series inductance) byt 12pi-1000
package mechanical data : isolated to220ac plastic marking : type number cooling method: by conduction (method c) weight : 1.86g recommended torque value : 80cm. n maximum torque value : 100cm. n b1 l2 a1 e f l b i a c b2 c1 c2 a2 ref. dimensions millimeters inches min. max. min. max. a 14.23 15.87 0.560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579 b 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038 b2 1.15 1.39 0.045 0.055 c 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106 e 4.58 5.58 0.180 0.220 f 5.85 6.85 0.230 0.270 i 3.55 4.00 0.140 0.157 l 2.54 3.00 0.100 0.118 l2 1.45 1.75 0.057 0.069 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. 5/5 byt 12pi-1000


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