?2001 fairchild semiconductor corporation march 2001 FMBH1G75US60 rev. a igbt FMBH1G75US60 absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature symbol description FMBH1G75US60 units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector curent @ t c = 25 c75 a i cm (1) pulsed collector current 150 a i f diode continuous forward current @ t c = 100 c75 a i fm diode maximum forward current 150 a t sc short circuit withstand time @ t c = 100 c10 us p d maximum power dissipation @ t c = 25 c 310 w t j operating junction temperature -40 to +150 c t stg storage temperature range -40 to +125 c v iso isolation voltage @ ac 1minute 2500 v mounting torque power terminals screw : m5 2.0 n.m mounting screw : m5 2.0 n.m FMBH1G75US60 molding type module general description fairchild?s insulated gate bipolar transistor (igbt) power modules provide low conduction and switching losses as well as short circuit ruggedness. they are designed for applications such as motor control, uninterrupted power supplies (ups) and general inverters where short circuit ruggedness is a required feature. features ? ul certified no. e209204 ? short circuit rated 10us @ t c = 100 c, v ge = 15v ? high speed switching ? low saturation voltage : v ce(sat) = 2.2 v @ i c = 75a ? high input impedance ? fast & soft anti-parallel fwd application ? buck (step down) converter internal circuit diagram c1 e2 e1/c2 g1 e1 package code : 7pm-aa
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 electrical characteristics of igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coeff. of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 0v, i c = 75ma 5.0 -- 8.5 v v ce(sat) collector to emitter saturation voltage i c = 75a , v ge = 15v -- 2.2 2.8 v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 7056 -- pf c oes output capacitance -- 672 -- pf c res reverse transfer capacitance -- 180 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 75a, r g = 3.3 ? , v ge = 15v inductive load, t c = 25 c -- 24 -- ns t r rise time -- 41 -- ns t d(off) turn-off delay time -- 120 150 ns t f fall time -- 87 200 ns e on turn-on switching loss -- 2.4 -- mj e off turn-off switching loss -- 1.8 -- mj e ts total switching loss -- 4.2 -- mj t d(on) turn-on delay time v cc = 300 v, i c = 75a, r g = 3.3 ? , v ge = 15v inductive load, t c = 125 c -- 27 -- ns t r rise time -- 43 -- ns t d(off) turn-off delay time -- 175 -- ns t f fall time -- 124 -- ns e on turn-on switching loss -- 2.6 -- mj e off turn-off switching loss -- 2.7 -- mj e ts total switching loss -- 5.3 -- mj t sc short circuit withstand time v cc = 300 v, v ge = 15v @ t c = 100 c 10 -- -- us q g total gate charge v ce = 300 v, i c = 75a, v ge = 15v -- 310 350 nc q ge gate-emitter charge -- 62 -- nc q gc gate-collector charge -- 130 -- nc
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 electrical characteristics of diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 75a t c = 25 c -- 1.9 2.8 v t c = 100 c -- 1.8 -- t rr diode reverse recovery time i f = 75a di / dt = 150 a/us t c = 25 c -- 90 130 ns t c = 100 c -- 130 -- i rr diode peak reverse recovery current t c = 25 c -- 7 9 a t c = 100 c -- 10 -- q rr diode reverse recovery charge t c = 25 c -- 315 590 nc t c = 100 c -- 650 -- symbol parameter typ. max. units r jc junction-to-case (igbt part, per 1/2 module) -- 0.4 c / w r jc junction-to-case (diode part, per 1/2 module) -- 0.9 c / w r cs case-to-sink (conductive grease applied) 0.05 -- c / w weight weight of module -- 190 g
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 02468 0 20 40 60 80 100 120 140 160 180 200 20v 12v 15v vge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 0.3 1 10 20 0 40 80 120 160 200 common emitter v ge = 15v t c = 25 t c = 125 collector current, i c [a] collector - emitter voltage, v ce [v] 0 4 8 12 16 20 0 4 8 12 16 20 common emitter t c = 125 150a 75a ic = 40a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 048121620 0 4 8 12 16 20 common emitter t c = 25 150a 75a ic = 40a collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] 0 20 40 60 80 100 0.1 1 10 100 1000 duty cycle : 50% tc = 100 power dissipation = 100w v cc = 300v load current : peak of square wave frequency [khz] load current [a] 0 306090120150 0 1 2 3 4 5 150a 75a i c = 40a common emitter v ge = 15v collector - emitter voltage, v ce [v] case temperature, tc [ ] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 3. saturation voltage vs. case temperature at variant current level fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 20 30 40 50 60 70 75 100 1000 toff tf common emitter v cc = 300v, v ge = 15v r g = 3.3 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 20 30 40 50 60 70 75 10 100 300 ton tr common emitter v cc = 300v, v ge = 15v r g = 3.3 ? t c = 25 t c = 125 switching time [ns] collector current, i c [a] 110100 1000 10000 20000 eoff eon common emitter v cc = 300v, v ge = 15v i c = 75a t c = 25 t c = 125 switching loss [uj] gate resistance, rg [ ? ] 10 100 100 1000 tf toff common emitter v cc = 300v, v ge = 15v i c = 75a t c = 25 t c = 125 switching time [ns] gate resistance, r g [ ? ] 110100 10 100 1000 common emitter v cc = 300v, v ge = 15v i c = 75a t c = 25 t c = 125 ton tr switching time [ns] gate resistance, r g [ ? ] fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 2000 4000 6000 8000 10000 12000 14000 16000 cres coes cies common emitter v ge = 0v, f = 1mhz t c = 25 capacitance [pf] collector - emitter voltage, v ce [v]
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 0 100 200 300 400 500 600 700 0.1 1 10 100 500 single nonrepetitive pulse t j 125 v ge = 15v r g = 3.3 ? collector current, i c [a] collector-emitter voltage, v ce [v] 1 10 100 1000 1 10 100 safe operating area v ge = 20v, t c = 100 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.3 1 10 100 1000 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 curves must be derated linerarly with increase in temperature 50us 100us 1 ? dc operation i c max. (continuous) i c max. (pulsed) collector current, i c [a] collector-emitter voltage, v ce [v] 0 50 100 150 200 250 300 350 0 3 6 9 12 15 200 v v cc = 100 v 300 v common emitter r l = 4 ? t c = 25 gate - emitter voltage, v ge [ v ] gate charge, qg [ nc ] 20 30 40 50 60 70 75 100 1000 10000 eon eoff eon eoff common emitter v cc = 300v, v ge = 15v r g = 3.3 ? t c = 25 t c = 125 switching loss [uj] collector current, i c [a] fig 14. gate charge characteristics fig 13. switching loss vs. collector current fig 15. soa characteristics fig 16. turn-off soa characteristics fig 17. rbsoa characteristics fig 18. transient thermal impedance 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 t c = 25 igbt : diode : thermal response, zthjc [ /w] rectangular pulse duration [sec]
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 0 1020304050607080 2 10 20 t rr 5 common cathode di/dt = 150a/ ? t c = 25 t c = 100 i rr peak reverse recovery current i rr [a] reverse recovery time t rr [x10ns] forward current, i f [a] 01234 0 40 80 120 160 200 common cathode v ge = 0v t c = 25 t c = 125 forward current, i f [a] forward voltage, v f [v] fig 20. reverse recovery characteristics fig 19. forward characteristics
?2001 fairchild semiconductor corporation FMBH1G75US60 rev. a FMBH1G75US60 package dimension 7pm-aa (fs pkg code bd) dimensions in millimeters
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