bd744, bd744a, bd744b, bd744c pnp silicon power transistors product information 1 august 1978 - revised march 1997 copyright ? 1997, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . l designed for complementary use with the bd743 serie s l 90 w at 25c case temperatur e l 15 a continuous collector curren t l 20 a peak collector curren t l customer-specified selections availabl e b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 absolute maximum ratings at 25c case temperature (unless otherwise noted ) notes: 1. this value applies for t p 0.3 ms, duty cycle 10% . 2. derate linearly to 150c case temperature at the rate of 0.72 w/c . 3. derate linearly to 150c free air temperature at the rate of 16 mw/c . 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on ) = -0.4 a, r b e = 100 w , v be(off ) = 0, r s = 0. 1 w , v c c = -20 v . ratin g symbo l valu e uni t collector-base voltage ( i e = 0 ) bd744 bd744a bd744b bd744 c v cb o -50 -70 -90 -11 0 v collector-emitter voltage ( i b = 0 ) bd744 bd744a bd744b bd744 c v ce o -45 -60 -80 -10 0 v emitter-base voltag e v eb o - 5 v continuous collector curren t i c -1 5 a peak collector current (see note 1 ) i c m -2 0 a continuous base curren t i b - 5 a continuous device dissipation at (or below) 25c case temperature (see note 2 ) p to t 9 0 w continuous device dissipation at (or below) 25c free air temperature (see note 3 ) p to t 2 w unclamped inductive load energy (see note 4 ) ?l i c 2 9 0 m j operating free air temperature rang e t a -65 to +15 0 c operating junction temperature rang e t j -65 to +15 0 c storage temperature rang e t st g -65 to +15 0 c lead temperature 3.2 mm from case for 10 second s t l 26 0 c
bd744, bd744a, bd744b, bd744 c pnp silicon power transistor s 2 august 1978 - revised march 199 7 product information notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2% . 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts . ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters . electrical characteristics at 25c case temperature (unless otherwise noted ) paramete r test condition s mi n ty p ma x uni t v (br)ce o collector-emitter breakdown voltag e i c = -30 m a i b = 0 (see note 5 ) bd744 bd744a bd744b bd744 c -45 -60 -80 -10 0 v i cb o collector cut-off curren t v c e = -50 v v c e = -70 v v c e = -90 v v c e = -110 v v c e = -50 v v c e = -70 v v c e = -90 v v c e = -110 v v b e = 0 v b e = 0 v b e = 0 v b e = 0 v b e = 0 v b e = 0 v b e = 0 v b e = 0 t c = 125c t c = 125c t c = 125c t c = 125 c bd744 bd744a bd744b bd744c bd744 bd744a bd744b bd744 c -0.1 -0.1 -0.1 -0.1 -5 -5 -5 - 5 m a i ce o collector cut-off curren t v c e = -30 v v c e = -60 v i b = 0 i b = 0 bd744/744a bd744b/744 c -0.1 -0. 1 m a i eb o emitter cut-off curren t v e b = -5 v i c = 0 -0. 5 m a h f e forward current transfer rati o v c e = -4 v v c e = -4 v v c e = -4 v i c = - 1 a i c = - 5 a i c = -1 5 a (see notes 5 and 6 ) 40 20 5 15 0 v ce(sat ) collector-emitter saturation voltag e i b = -0.5 a i b = -5 a i c = - 5 a i c = -1 5 a (see notes 5 and 6 ) -1 - 3 v v b e base-emitter voltag e v c e = -4 v v c e = -4 v i c = -5 a i c = -15 a (see notes 5 and 6 ) -1 - 3 v h f e small signal forward current transfer rati o v c e = -10 v i c = - 1 a f = 1 kh z 2 5 | h f e | small signal forward current transfer rati o v c e = -10 v i c = - 1 a f = 1 mh z 5 thermal characteristic s paramete r mi n ty p ma x uni t r q j c junction to case thermal resistanc e 1. 4 c/ w r q j a junction to free air thermal resistanc e 62. 5 c/ w resistive-load-switching characteristics at 25c case temperatur e paramete r test conditions ? mi n ty p ma x uni t t d delay tim e i c = -5 a v be(off ) = 4.2 v i b(on ) = -0.5 a r l = 6 w i b(off ) = 0.5 a t p = 20 s, dc 2 % 2 0 n s t r rise tim e 12 0 n s t s storage tim e 60 0 n s t f fall tim e 30 0 n s
3 august 1978 - revised march 1997 bd744, bd744a, bd744b, bd744c pnp silicon power transistors product information typical characteristic s figure 1. figure 2. maximum safe operating region s figure 3. typical dc current gain vs collector current i c - collector current - a -01 -10 -10 -100 h fe - dc current gain 10 100 1000 tcs638aa t c = 125c t c = 25c t c = -55c v ce = -4 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -01 -10 -10 -100 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs638ab t c = -55c t c = 25c t c = 125c t p = 300s, duty cycle < 2% i c i b = 10 maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 -100 sas638aa bd744 bd744a bd744b bd744c t p = 1 ms, d = 0.1 = 10% t p = 10 ms, d = 0.1 = 10% t p = 50 ms, d = 0.1 = 10% dc operation
bd744, bd744a, bd744b, bd744 c pnp silicon power transistor s 4 august 1978 - revised march 199 7 product information thermal informatio n figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 90 100 tis637aa
5 august 1978 - revised march 1997 bd744, bd744a, bd744b, bd744c pnp silicon power transistors product information to-220 3-pin plastic flange-mount packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . mechanical dat a to220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 1 2 3 0,97 0,61 see note c see note b 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 version 2 version 1 notes: a. the centre pin is in electrical contact with the mounting tab. b. mounting tab corner profile according to package version. c. typical fixing hole centre stand off height according to package version. version 1, 18.0 mm. version 2, 17.6 mm. mdxxbe
bd744, bd744a, bd744b, bd744 c pnp silicon power transistor s 6 august 1978 - revised march 199 7 product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements . pi accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used . pi semiconductor products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 1997, power innovations limite d
|
