2sb1409(l)/(s) silicon pnp epitaxial application low frequency power amplifier complementary pair with 2sd2123(l)/(s) outline 4 1 2 3 4 3 2 1 s type l type 1. base 2. collector 3. emitter 4. collector dpak
2sb1409(l)/(s) 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo C180 v collector to emitter voltage v ceo C160 v emitter to base voltage v ebo C5 v collector current i c C1.5 a collector peak current i c(peak) C3 a collector power dissipation p c * 1 18 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25 c. electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo C180 v i c = C1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo C160 v i c = C10 ma, r be = emitter to base breakdown voltage v (br)ebo C5 v i e = C1 ma, i c = 0 collector cutoff current i cbo C10 m av cb = C160 v, i e = 0 dc current transfer ratio h fe1 * 1 60 200 v ce = C5 v, i c = C150 ma* 2 h fe2 30 v ce = C5 v, i c = C500 ma* 2 collector to emitter saturation voltage v ce(sat) C1v i c = C500 ma, i b = C50 ma base to emitter voltage v be C1.5 v v ce = C5 v, i c = C150 ma gain bandwidth product f t 240 mhz v ce = C5 v, i c = C150 ma collector output capacitance cob 25 pf v cb = C10 a, i e = 0, f = 1 mhz notes: 1. the 2sb1409(l)/(s) is grouped by h fe1 as follows. bc 60 to 120 100 to 200 2. pulse test.
2sb1409(l)/(s) 3 0 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 50 100 150 10 30 20 ?.01 ?.03 ?.1 ?.3 ?.0 ?0 ? collector to emitter voltage v ce (v) collector current i c (a) ? ?0 ?0 ?00 ?00 area of safe operation i c (max) i c (peak) pw = 10 ms 1 ms dc operation (t c = 25 c) ta = 25 c
1 shot pulse collector to emitter voltage v ce (v) collector current i c (a) 0 typical output characteristics ?0 ?0 ?0 ?0 ?0 ?.2 ?.4 ?.6 ?.8 ?.0 i b = 0 t c = 25 c p c = 18 w ? ma ?.5 ?.5 ?.5 ?.5 ? ? ? ? 10 30 100 300 1,000 collector current i c (a) dc current transfer ratio h fe ?.01 ?.03 ?.1 ?.3 ?.0 dc current transfer ratio vs.
collector current v ce = ? v
ta = 25 c
2sb1409(l)/(s) 4 ?.01 ?.1 ?.0 ?0 collector current i c (a) ?.001 ?.01 ?.1 ?.0 collector to emitter saturation voltage
v ce (sat) (v) saturation voltage vs. collector current l c = 10 l b
ta = 25 c
?.1 ?.3 ?.0 ? ?0 collector current i c (a) ?.03 ?.1 ?.3 ?.0 ?.0 base to emitter saturation voltage
v be (sat) (v) saturation voltage vs. collector current l c = 10 l b
ta = 25 c
0 ?.4 ?.8 ?.2 ?.6 ?.0 base to emitter voltage v be (v) collector current i c (a) 0 ?.4 ?.8 ?.2 ?.6 ?.0 typical transfer characteristics v ce = ? v
ta = 25 c 10 30 100 300 1,000 collector current i c (a) gain bandwidth product f t (mhz) ?.01 ?.03 ?.1 ?.3 ?.0 gain bandwidth product vs.
collector current v ce = ? v
ta = 25 c
2sb1409(l)/(s) 5 3 10 30 100 300 collector to base voltage v cb (v) collector output capacitance c ob (pf) ? ? ?0 ?0 ?00 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0
ta = 25 c
2sb1409(l)/(s) 6 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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