? 2002 ixys all rights reserved g c e to-247 ad (ixgh) 97544e (6/02) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 125 c3ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.1 2.5 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c32a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 64 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead and tab temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque, to-247 ad 1.13/10 nm/lb.in. weight to-247 ad 6 g to-268 5 g hiperfast tm igbt with diode light speed series features z international standard to-247ad package z high current handling capability z latest generation hdmos tm process z mos gate turn-on - drive simplicity applications z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications z high power surface mountable package ixgh 32n60cd1 ixgt 32n60cd1 v ces = 600 v i c25 = 60 a v ce(sat)typ = 2.1 v t fi(typ) = 55 ns g = gate c = collector e = emitter to-268 (d3) ( ixgt) c (tab) g e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 to-247 ad outline dim. m illimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 240 pf c res 50 pf q g 110 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 22 nc q gc 40 nc t d(on) 25 ns t ri 20 ns t d(off) 85 ns t fi 55 ns e off 0.32 mj t d(on) 25 ns t ri 25 ns e on 1mj t d(off) 110 170 ns t fi 100 160 ns e off 0.85 1.25 mj r thjc 0.62 k/w r thck 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, pulse test t j =150 c 1.6 v t 300 s, duty cycle d 2 % t j = 25 c 2.5 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 100 v t j = 100 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j = 25 c25 ns r thjc 0.9 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixgh 32n60cd1 ixgt 32n60cd1 to-268 outline terminals: 1 - gate 2 - co llector 3 - emitter
? 2002 ixys all rights reserved v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce - volts 012345 i c - amperes 0 20 40 60 80 100 v ce -volts 0 5 10 15 20 25 30 35 40 capacitance - pf 10 100 1000 10000 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.50 0.75 1.00 1.25 1.50 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v t j = 25c v ge = 15v t j = 25c i c = 16a i c = 32a i c = 64a t j = 125c f = 1mhz 5v 5v v ge = 15v t j = 25c t j = 125c 7v 9v 5v 7v 9v v ge = 15v 13v c iss c oss c rss 11v 11v fig. 1. output characteristics fig. 2. extended output characteristics fig. 3. high temperature output characteristics fig. 4. temperature dependence of v ce(sat) fig. 5. admittance curves fig. 6. capacitance curves ixgh 32n60cd1 ixgt 32n60cd1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 255075100125 v ge - volts 0 4 8 12 16 r g - ohms 0 102030405060 e (off) - millijoules 0 2 4 6 8 e (on) - millijoules 0 1 2 3 4 i c - amperes 0 20406080 e (off) - millijoules 0 1 2 3 4 e (on) - m illij ou l es 0.00 0.25 0.50 0.75 1.00 v ce = 300v i c = 16a i c = 32a e (on) e (off) e (off) t j = 125c r g = 4.7 ? dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 ? t j = 125c 64 e (on) i c = 64a e (off) t j = 125c e (on) i c = 32a e (on) e (off) fig. 7. dependence of e on and e off on i c . fig. 8. dependence of e on and e off on r g . fig. 9. gate charge fig. 10. turn-off safe operating area fig. 11. transient thermal resistance ixgh 32n60cd1 ixgt 32n60cd1
? 2002 ixys all rights reserved 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 14 peak reverse current i rm versus -di f /dt fig. 13 reverse recovery charge q r versus -di f /dt fig. 12 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 15 dynamic parameters q r , i rm versus t vj fig. 16 recovery time t rr versus -di f /dt fig. 17 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 18 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c ixgh 32n60cd1 ixgt 32n60cd1
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