jmnic product specification silicon pnp power transistors 2SA1469 description ? with to-220f package ? complement to type 2sc3746 ? low saturation voltage ? excellent current dependence of h fe ? short switching time applications ? various inductance of lamp drivers for electrical equipment ? inverters ,converters ? power amplification ? switching regulator ,driver pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol param eter conditions va lue unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cm collector current-peak -7 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1469 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = ?t -60 v v (br)cbo collector-base breakdown voltage i c =-10ma ;i e =0 -80 v v (br)ebo emitter-base breakdown voltage i e =-10ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2.5a i b =-0.125a -0.4 v i cbo collector cut-off current v cb =-40v i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-2v 70 280 f t transition frequency i c =-1a ; v ce =-5v 100 mhz switching times t on turn-on time 0.1 | s t s storage time 0.5 | s t f fall time i c =-2.0a;i b1 =-i b2 =-0.1a v cc =20v ,r l =10 |? 0.1 | s ? h fe classifications q r s 70-140 100-200 140-280
jmnic product specification 3 silicon pnp power transistors 2SA1469 package outline fig.2 outline dimensions
jmnic product specification 4 silicon pnp power transistors 2SA1469
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