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| transistor(pnp) features ? driver transistors marking: 2h m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 60 v v ceo collector - emitter voltage - 60 v v ebo emitter - base voltage - 4 v i c collector current - 500 m a p c collector power dissipation 225 m w r ja thermal resistance fro m j u nction to a mbient 55 6 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 00 a , i e =0 - 60 v collector - emitter breakdown voltage v (br) c e o i c = - 1 ma, i b =0 - 60 v emitter - base breakdown voltage v (br)eb o i e = - 10 0 a , i c =0 - 4 v collector cut - off current i cbo v cb = - 60 v, i e =0 - 0.1 a collector cut - off current i c e o v c e = - 60 v, i b =0 - 0.1 a h fe (1) v ce = - 1 v, i c = - 1 0 m a 100 dc current gain h fe (2) v ce = - 1 v, i c = - 100 ma 100 collector - emitter saturation voltage v ce(sat) i c = - 100 m a, i b = - 10 ma - 0.2 5 v b ase - emitter voltage v b e v ce = - 1 v, i c = - 1 00 m a - 1 .2 v transit ion frequency f t v ce = - 1 v,i c = - 100 ma , f=1 00 mhz 50 mhz so t C 23 1. base 2. emitter 3. collector MMBTA55 1 date:2011/05 www.htsemi.com semiconductor jinyu
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