maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 3.0 v collector current (continuous) i c 50 ma power dissipation p d * 225 mw operating and storage junction temperature t j ,t stg -55 to +150 c thermal resistance ja 556 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =10v 100 na i ebo v eb =2.0v 100 na bv cbo i c =10 a20v bv ceo i c =1.0ma 20 v bv ebo i e =10 a 3.0 v v ce(sat) i c =5.0ma, i b =500a 0.5 v v be(on) v ce =10v, i c =5.0ma 0.9 v h fe v ce =10v, i c =5.0ma 60 f t v ce =10v, i c =5.0ma, f=100mhz 600 mhz c cb v cb =10v, i e =0, f=1.0mhz 0.85 pf c ce v cb =10v, i b =0, f=1.0mhz 0.65 pf * fr-4 epoxy pcb substrate 1.6? x 1.6? x 0.06? CMPTH81 surface mount pnp silicon rf transistor sot-23 case central semiconductor corp. tm r2 (16-october 2002) description : the central semiconductor CMPTH81 type is a pnp silicon rf transistor, epoxy molded in a surface mount package, designed for general rf amplifier applications. marking code: c3d.
central semiconductor corp. tm sot-23 case- mechanical outline CMPTH81 surface mount pnp silicon rf transistor r2 (16-october 2002) lead code: 1) base 2) emitter 3) collector marking code: c3d
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