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| inchange semiconductor product specification silicon npn power transistors 2SD1591 description ? ? with to-220fa package ? darlington ? complement to type 2sb1100 applications ? low frequency power amplification ? low speed power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 10 a i cm collector current-peak 15 a i b base current (dc) 0.5 a t a =25 ?? 2 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1591 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 100 v v cesat collector-emitter saturation voltage i c =10a; i b =25ma 1.5 v v besat base-emitter saturation voltage i c =10a; i b =25ma 2.0 v i cbo collector cut-off current v cb =100v; i e =0 10 | a i ceo collector cut-off current v ce =100v; i e =0 500 | a i ebo emitter cut-off current v eb =7v ;i c =0 5 ma h fe dc current gain i c =10a ; v ce =2v 1000 30000 inchange semiconductor product specification 3 silicon npn power transistors 2SD1591 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm) |
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