technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 1700 v kollektor-dauergleichstrom t c = 80 c i c,nom. 800 a dc-collector current t c = 25 c i c 1300 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 1600 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 6,25 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 800 a periodischer spitzenstrom repetitive peak forw. current tp = 1 ms i frm 1600 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 170 ka 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 4 k v charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 800a, v ge = 15v, t vj = 25 c v ce sat 2,6 3,1 v collector-emitter saturation voltage i c = 800a, v ge = 15v, t vj = 125 c 3,1 3,6 v gate-schwellenspannung gate threshold voltage i c = 65 m a , v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v ... +15v q g 9,6 c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies 52 nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res 2,7 nf kollektor-emitter reststrom v ce = 1700v, v ge = 0v, t vj = 25 c i ces 0,02 1,5 ma collector-emitter cut-off current v ce = 1700v, v ge = 0v, t vj = 125 c 10 80 ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25 c i ges 400 na prepared by: alfons wiesenthal date of publication: 1 0.11.2000 approved by: christoph lbke: 10.11.2000 revision: serie 1(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 800a, v ce = 900v turn on delay time (inductive load) v ge = 15v, r g = 1,2 w , t vj = 25c t d,on 0,4 s v ge = 15v, r g = 1,2 w , t vj = 125c 0,4 s anstiegszeit (induktive last) i c = 800a, v ce = 900v rise time (inductive load) v ge = 15v, r g = 1,2 w , t vj = 25c t r 0,14 s v ge = 15v, r g = 1,2 w , t vj = 125c 0,14 s abschaltverz?gerungszeit (ind. last) i c = 800a, v ce = 900v turn off delay time (inductive load) v ge = 15v, r g = 1,8 w , t vj = 25c t d,off 1,1 s v ge = 15v, r g = 1,8 w , t vj = 125c 1,1 s fallzeit (induktive last) i c = 800a, v ce = 900v fall time (inductive load) v ge = 15v, r g = 1,8 w , t vj = 25c t f 0,13 s v ge = 15v, r g = 1,8 w , t vj = 125c 0,14 s einschaltverlustenergie pro puls i c = 800a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 1,2 w , t vj = 125c, l s = 60nh e on 290 mws abschaltverlustenergie pro puls i c = 800a, v ce = 900v, v ge = 15v turn-off energy loss per pulse r g = 1,8 w , t vj = 125c, l s = 60nh e off 335 mws kurzschlu?verhalten t p 10sec, v ge 15v sc data t vj 125c, v cc =1000v, v cemax =v ces -l sce di/dt i sc 3200 a modulinduktivit?t stray inductance module l sce 20 nh modulleitungswiderstand, anschlsse - chip module lead resistance, terminals - chip pro zweig / per arm r cc+ee 0,16 m w charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 800a, v ge = 0v, t vj = 25c v f 2,1 2,5 v forward voltage i f = 800a, v ge = 0v, t vj = 125c 2,1 2,5 v rckstromspitze i f = 800a, - di f /dt =6300a/sec peak reverse recovery current v r = 900v, vge = -10v, t vj = 25c i rm 800 a v r = 900v, vge = -10v, t vj = 125c 900 a sperrverz?gerungsladung i f = 800a, - di f /dt = 6300a/sec recovered charge v r = 900v, vge = -10v, t vj = 25c q r 170 as v r = 900v, vge = -10v, t vj = 125c 310 as abschaltenergie pro puls i f = 800a, - di f /dt = 6300a/sec reverse recovery energy v r = 900v, vge = -10v, t vj = 25c e rec 80 mws v r = 900v, vge = -10v, t vj = 125c 170 mws ff 800 r 17 kf6c b2 2(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor, dc r thjc 0,02 k/w thermal resistance, junction to case diode/diode, dc 0,034 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module l paste = 1 w/m*k / l grease = 1 w/m*k r thck 0,008 k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj 150 c betriebstemperatur operation temperature t op -40 125 c lagertemperatur storage temperature t stg -40 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation aln kriechstrecke creepage distance 15 mm luftstrecke clearance 10 mm cti comperative tracking index min. 275 anzugsdrehmoment f. mech. befestigung m1 5 nm mounting torque anzugsdrehmoment f. elektr. anschlsse terminals m4 m2 2 nm terminal connection torque terminals m8 8 - 10 nm gewicht weight g 1050 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. 3(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 i c [a] v ce [v] i c [a] v ce [v] 0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 tj = 25c tj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 i c [a] v ge [v] i f [a] v f [v] 0 200 400 600 800 1000 1200 1400 1600 1800 5678910111213 tj = 25c tj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 200 400 600 800 1000 1200 1400 1600 1800 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj=25c tvj=125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 e [mj] i c [a] e [mj] r g [ w ] 0 200 400 600 800 1000 1200 1400 0 200 400 600 800 1000 1200 1400 1600 1800 eoff eon erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) r gon = 1,2 w ; r goff =1,8 w , v ce = 900v, t j = 125c, v ge = 15v 0 200 400 600 800 1000 1200 02468101214 eoff eon erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switchin g losses ( t yp ical ) i c = 800a , v ce = 900v , t j = 125c, v ge = 15v 6(8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 1,88 9,43 2,85 5,84 t i [sec] : igbt 0,027 0,052 0,09 0,838 r i [k/kw] : diode 15,7 7,05 2,24 9,05 t i [sec] : diode 0,0287 0,0705 0,153 0,988 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) r g = 1,8 ohm, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 200 400 600 800 1000 1200 1400 1600 1800 0 200 400 600 800 1000 1200 1400 1600 1800 ic,modul ic,chip 0,001 0,01 0,1 0,001 0,01 0,1 1 10 100 zth:diode zth:igbt 7 (8) ff800r17kf6c b2
technische information / technical information igbt-module igbt-modules ff 800 r 17 kf6c b2 ?u?ere abmessungen / external dimensions 8(8) ff800r17kf6c b2
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