inchange semiconductor product specification silicon npn power transistors MJ15015 description ? with to-3 package ? complement to type mj15016 ? excellent safe operating area applications ? for high power audio ,stepping motor and other linear applications ? relay or solenoid drviers ? dc-dc converters inverters pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 15 a i b base current 7 a p c collector power dissipation t c =25 ?? 180 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.98 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors MJ15015 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (sus)ceo collector-emitter sustaining voltage i c =0.2a ;i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =4a; i b =0.4a 1.1 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =3.3a 3.0 v v cesat-3 collector-emitter saturation voltage i c =15a; i b =7.0a 5.0 v v be base-emitter on voltage i c =4a ; v ce =4v 1.8 v i ceo collector cut-off current v ce =60v; v be(off) =0 0.1 ma i cev collector cut-off current v ce =rated value; v be(off) =1.5v t c =150 ?? 1.0 6.0 ma i ebo emitter cut-off current v eb =7v; i c =0 0.2 ma h fe-1 dc current gain i c =4a ; v ce =2v 10 70 h fe-2 dc current gain i c =4a ; v ce =4v 20 70 h fe-3 dc current gain i c =10a ; v ce =4v 5 i s/b second breakdown collector current with base forward biased v ce =60vdc,t=0.5 s, nonrepetitive 3.0 a c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 60 600 pf f t transition frequency i c =1a ; v ce =4v;f=1.0mhz 0.8 mhz
inchange semiconductor product specification 3 silicon npn power transistors MJ15015 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
inchange semiconductor product specification 4 silicon npn power transistors MJ15015
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