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=a ."6 6 ;.6 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. skm 300gb125d 2 11-09-2006 raa ? by semikron
semitrans ? 3 ultra fast igbt module skm 300gb125d preliminary data features

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# / ., 01 gb z th symbol conditions values units z th(j-c)l 2 5 + 6; 0op 2 5 . +<"6 0op 2 5 ; ;"+ 0op 2 5 ? ? 0op 5 + ,",? 5 . ,",+<i 5 ; ,",,+h 5 ? ,",,; z th(j-c)d 2 5 + ++6 0op 2 5 . 6. 0op 2 5 ; ++ 0op 2 5 ? . 0op 5 + ,",;aa 5 . ,",++; 5 ; ,",,; 5 ? ,",,,. skm 300gb125d 3 11-09-2006 raa ? by semikron
fig. 1 typ. output characteristic, t p = 80 s; 125 c fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic, t p = 80 s; v ce = 20 v fig. 6 typ. gate charge characteristic skm 300gb125d 4 11-09-2006 raa ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance fig. 10 cal diode forward characteristic fig. 11 typ. cal diode peak reverse recovery current fig. 12 typ. cal diode peak reverse recovery charge skm 300gb125d 5 11-09-2006 raa ? by semikron
ul recognized file 63 532 ' ) 6a ' ) 6a skm 300gb125d 6 11-09-2006 raa ? by semikron

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