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july 2009 doc id 16083 rev 1 1/11 11 STS5N15F4 n-channel 150 v, 0.057 ? , 5 a, so-8 stripfet? deepgate? power mosfet features n-channel enhancement mode 100% avalanched rated low gate charge very low on-resistance application switching applications description this stripfet? deepgate? power mosfet technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. figure 1. internal schematic diagram type v dss r ds(on) max i d STS5N15F4 150 v < 0.063 ? 5 a so-8 table 1. device summary order code marking package packaging STS5N15F4 5u15- so-8 tape and reel www.st.com
electrical ratings STS5N15F4 2/11 doc id 16083 rev 1 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 150 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c =100 c 3 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 2.5 w t stg storage temperature -55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu, t < 10 sec thermal resistance ju nction-pcb max 50 c/w table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i as , v dd = 140 v) 125 mj
STS5N15F4 electrical characteristics doc id 16083 rev 1 3/11 2 electrical characteristics (t j = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 150 v i dss zero gate voltage drain current (v gs = 0) v ds = 150 v, v ds = 150 v, @125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.5 a 0.057 0.063 ? table 6. dynamic symbol parameter test cond itions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 2710 180 69.5 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 75 v, i d = 5 a v gs =10 v figure 14 on page 7 - 48 10.8 13.7 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -1.9- ?
electrical characteristics STS5N15F4 4/11 doc id 16083 rev 1 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 75 v, i d = 3 a, r g =4.7 ?, v gs =10 v figure 13 on page 7 - 13.5 5.1 39.7 11.4 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs = 0 - 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a, di/dt = 100 a/s, v r = 120 v, t j = 150 c figure 15 on page 7 - 85.2 277.6 8.2 ns nc a
STS5N15F4 electrical characteristics doc id 16083 rev 1 5/11 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100m s 1 s 10m s tj=150c tc=25c s inlge p u l s e 0.01 am04995v1 i d 3 0 20 10 0 0 10 v d s (v) (a) 5 15 40 50 5v 6v 4v v g s =10v 60 70 am049 8 6v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 40 50 60 70 v d s =10v am049 8 7v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.90 0.95 1.00 1.05 1.10 125 150 am049 8 9v1 r d s (on) 60 40 20 0 0 2 i d (a) ( ? ) 1 3 8 0 100 120 140 i d = 3 a v g s =10v 4 5 am049 88 v1
electrical characteristics STS5N15F4 6/11 doc id 16083 rev 1 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =75v i d =5a 50 12 am04990v1 c 1500 1000 500 0 0 40 v d s (v) (pf) 20 2000 60 ci ss co ss cr ss t j =25c f=1mhz 2000 2500 8 0 100 120 140 am04991v1 v g s (th) 0. 8 0 0.70 0.60 0.50 -50 0 t j (c) (norm) -25 0.90 75 25 50 100 125 1.00 1.10 150 am04992v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0 2.5 125 150 am0499 3 v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 t j =-55c t j =175c t j =25c am04994v1
STS5N15F4 test circuits doc id 16083 rev 1 7/11 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STS5N15F4 8/11 doc id 16083 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STS5N15F4 package mechanical data doc id 16083 rev 1 9/11 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
revision history STS5N15F4 10/11 doc id 16083 rev 1 5 revision history table 9. document revision history date revision changes 23-jul-2009 1 first release
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