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| D2229UK semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk prelim. 2/99 p d power dissipation bv dss drain C source breakdown voltage bv gss gate C source breakdown voltage i d(sat) drain current t stg storage temperature t j maximum operating junction temperature 17.5w 40v 20v 2a C65 to 150c 200c gold metallised multi-purpose silicon dmos rf fet 2.5w C 12.5v C 1ghz single ended features ? simplified amplifier design ? suitable for broad band applications ? very low c rss ? simple bias circuits ? low noise ? high gain C 10 db minimum absolute maximum ratings (t case = 25c unless otherwise stated) applications ? hf/vhf/uhf communications from 1 mhz to 2 ghz metal gate rf silicon fet tetrafet mechanical data dimensions in mm. 1 2 3 4 3.00 2 pl. 2.07 2 pl. 2 pl. 0.47 0.47 2 pl. 0.10 typ. 0.381 1.65 2 pl. 5.50 0.15 1.27 0.05 2 pl. 1.27 1.27 0.10 r. typ. 0.10 typ. 6.50 0.15 0.3 r. 4 pl. 1.27 0.80 4 pl. 8 7 6 5 4.90 0.15 0.508 0.360 0.005 2.313 0.2 f-0127 package pin 1 C source pin 2 C drain pin 3 C drain pin 4 C source pin 5 C source pin 6 C gate pin 7 C gate pin 8 C source ceramic material: alumina. parts can also be supplied with aln or beo for improved thermal resistance. contact semelab for details.
D2229UK semelab plc. telephone +44(0)1455) 556565. fax +44(0)1455) 552612. e-mail: sales@semelab.co.uk website http://www.semelab.co.uk prelim. 2/99 p arameter t est conditions min. t yp. max. unit drainCsource bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain h drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance v gs = 0 i d = 10ma v ds = 12.5v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 0.2a p o = 2.5w v ds = 12.5v i dq = 0.1a f = 1ghz v ds = 0v v gs = C5v f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ma m a v s db % pf pf pf electrical chara cteristics (t case = 25c unless otherwise stated) 40 1 1 0.5 7 0.18 10 40 20:1 12 10 1 r thjCcase thermal resistance junction C case max. 10c / w thermal d a t a * pulse test: pulse duration = 300 m s , duty cycle 2% |
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