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mil-prf-19500/545d 27 july 2001 superseding mil-prf-19500/545c 21 july 2000 performance specification semiconductor device, transistor, pnp, silicon, power types 2n5151, 2n5153, 2n5151l, 2n5153l, 2n5151u3, and 2n5153u3 jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for pnp, silicon, power transistors for use in high-speed power-switching applications. four levels of product assurance are provided for each encapsulated device type as specified in mil-prf-19500. two levels of product assurance are provided for each unencapsulated device type. 1.2 physical dimensions. see figure 1 (similar to t0-205), figures 2, 3, and 4 (janhc and jankc), and figure 5 (u3). 1.3 maximum ratings. types p t t a = +25 c p t t c = +25 c v cbo v ceo v ebo i c i c (1) reverse pulse (2) energy safe operating area t stg and t j w w v dc v dc v dc a dc a dc mj c 2n5151, l 2n5153, l 1 (3) 1 (3) 11.8 (4) 11.8 (4) 100 100 80 80 5.5 5.5 2 2 10 10 15 15 see figure 6 -65 to + 200 2n5151u3 2n5153u3 1.16 (5) 1.16 (5) 100 (6) 100 (6) 100 100 80 80 5.5 5.5 2 2 10 10 15 15 see figure 6 -65 to + 200 (1) this value applies for pw 8.3 ms, duty cycle 1 percent. (2) this rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit of figure 7. (3) derate linearly 5.7 mw/ c for t a > +25 c. (4) derate linearly 66.7 mw/ c for t c > +25 c. (5) derate linearly 6.67 mw/ c for t a > +25 c. (6) derate linearly 571 mw/ c for t c > +25 c. amsc n/a fsc 5961 distribution statement. approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 27 october 2001. inch-pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc- vac, p. o. box 3990, columbus, oh 43216-5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/545d 2 1.4 primary electrical characteristics at t c = +25 c. limits h fe2 (1) v ce = 5 v i c = 2.5 a dc |h fe | v ce = 5 v i c = 500 ma dc f = 10 mhz v ce(sat)2 (1) i c = 5 a dc i b = 500 ma dc v ce(sat)2 (1) i c = 5 a dc i b = 500 ma dc c obo v cb = 10 v dc i e = 0 f = 1 mhz r q ja r q jc 2n5151 (2) 2n5153 (2) 2n5151 (2) 2n5153 (2) min max (to-205) max (u3) 30 90 90 70 200 200 67 v dc 2.2 2.2 v dc 1.5 1.5 pf 250 250 c/w 175 150 c/w 15 1.75 (1) pulsed (see 4.5.1) (2) the limits specified apply to all package outlines unless otherwise stated. 2. applicable documents 2.1 general. the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.2 government documents. 2.2.1 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devices, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence. in the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil-prf-19500/545d 3 figure 1. physical dimensions (t0-205). dimensions symbol inches millimeters notes 11 min max min max cd 0.305 0.335 7.75 8.51 6 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 7 ld 0.016 0.021 0.41 0.53 8, 9 ll see notes 8, 9, 12, 13 lu 0.016 0.019 0.041 0.48 8, 9 l 1 0.050 1.27 8, 9 l 2 0.250 6.35 8, 9 q 0.050 1.27 6 tl 0.029 0.045 0.74 1.14 4, 5 tw 0.028 0.034 0.71 0.86 3 r 0.010 0.25 11 a 45 tp 45 tp 7 p 0.100 2.54
mil-prf-19500/545d 4 notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of 0.011 (.28 mm). 4. tl measured from maximum hd. 5. outline in this zone is not controlled. 6. cd shall not vary more than 0.010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane 0.054 + 0.001 - 0.000 (1.37 + 0.03 - 0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc 8. lu applied between l 1 and l 2 . ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 9. all three leads. 10. the collector shall be electrically and mechanically connected to the case. 11. r (radius) applies to both inside corners of tab. 12. in accordance with ansi y14.5m, diameters are equivalent to ? x symbology. 13. for transistor types 2n5151 and 2n5153, ll is 0.5 (12.70 mm) minimum, and 0.75 (19.05 mm) maximum. 14. for transistor types 2n5151l and 2n5153l, ll is 1.5 (38.10 mm) minimum and 1.75 (44.45 mm) maximum. 15. lead designation, depending on device type, shall be as follows: lead number to-205 1 2 3 emitter base collector figure 1. physical dimensions (t0-205) - continued.
mil-prf-19500/545d 5 dimensions inches millimeters ltr min max min max notes a 0.117 0.127 02.97 3.23 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. unless otherwise specified, tolerance is 0.005 (0.13 mm). 4. the physical characteristics of the die are; thickness: 0.008 (0.20 mm) to 0.012 (0.30 mm), tolerance is 0. 005 (0.13 mm). top metal: aluminum, 40,000 ? minimum, 50,000 ? nominal. back metal: gold 2,500 ? minimum, 3,000 ? nominal. back side: collector. bonding pad: b = 0.015 (0.38 mm) x 0.0072 (0.183). e = 0.015 (0.38 mm) x 0.0060 (0.152). figure 2. janhca and jankca die dimensions.
mil-prf-19500/545d 6 dimensions inches millimeters ltr min max min max notes a 0.1 2.54 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. unless otherwise specified, tolerance is 0.005 (0.13 mm). 4. the physical characteristics of the die are; 5. thickness: 0.0078 (0.198 mm) nominal, tolerance is 0.005 (0.13 mm). top metal: aluminum, 25,000 ? minimum, 33,000 ? nominal. back metal: gold 1,500 ? minimum, 2,500 ? nominal. back side: collector. bonding pad: 0.012 (0.305 mm) min. x .030 (0.761 mm) minimum. figure 3. janhcb and jankcb die dimensions.
mil-prf-19500/545d 7 1. chip size................................. 0.128 x 0.128 inches 0.002 inches 2. chip thickness.......................0.010 0.0015 inches nominal 3. top metal............................. aluminum 30,000 ? minimum, 33,000 ? nominal 4. back metal............................a.al/ti/ni/ag15k ? /2k ? /7k ? /7k ? min.18k ? /3k ? /10k ? /10k ? nom. b. gold 2,500 ? minimum, 3,000 ? nominal 5. backside.............................. collector 6. bonding pad........................ b = 0.052 x 0.012 inches, e = 0.084 x 0.012 inches figure 4. janhc and jankc c-version die dimensions.
mil-prf-19500/545d 8 symbol dimensions inches millimeters min max min max bl 0.395 0.405 10.04 10.28 bw 0.291 0.301 7.40 7.64 ch 0.1085 0.1205 2.76 3.06 lh 0.010 0.020 0.25 0.51 lw1 0.281 0.291 7.14 7.41 lw2 0.090 0.100 2.29 2.54 ll1 0.220 0.230 5.59 5.84 ll2 0.115 0.125 2.93 3.17 ls1 0.150 bsc 3.81 bsc ls2 0.075 bsc 1.91 bsc q1 0.030 --- 0.762 --- q2 0.030 --- 0.762 --- term 1 drain term 2 gate term 3 source notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. dimensions and tolerances shall be in accordance with ansi y14.5m-1982. 4. terminal 1 - collector, terminal 2 - base, terminal 3 C emitter. schematic figure 5. physical dimensions and configuration for surface mount (u3). 2 1 3
mil-prf-19500/545d 9 3. requirements 3.1. general. the requirements for acquiring the product described herein shall consist of this document and mil-prf-19500. 3.2. qualification. devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (qml) before contract award (see 4.2 and 6.3). 3.3. abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. 3.4. interface and physical dimensions. the interface and physical dimensions shall be as specified in mil-prf-19500 and figure 1 (to-205), figures 2, 3, and 4 for janhc and jankc, figure 5 for u3 herein. 3.4.1. current density. current density of internal conductors shall be as specified in mil-prf-19500. 3.4.2. lead finish. lead finish shall be solderable as defined in mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5. electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6. electrical test requirements. the electrical test requirements shall be the subgroups specified in table i herein. 3.7. marking. marking shall be in accordance with mil-prf-19500. 3.8. workmanship. semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1. classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2. qualification inspection. qualification inspection shall be in accordance with mil-prf-19500 and as specified herein. 4.2.1. janhc and jankc qualification. janhc and jankc qualification inspection shall be in accordance with mil-prf-19500.
mil-prf-19500/545d 10 4.3. screening (jans, jantx, and jantxv levels only). screening shall be in accordance with table iv of mil-prf-19500 and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. measurement screen (see table iv of mil-prf-19500 jans levels jantx and jantxv levels 1a not required not required 1b required required for jantxv only 2 optional optional 3a required required 3b not applicable not applicable 3c thermal response (see 4.5.3) thermal response (see 4.5.3) 4 required optional 5 required not applicable 7a and 7b required required 8 required not required 9 i ces1 and h fe2 not applicable 10 48 hours minimum 48 hours minimum 11 i ces1 and h fe2 ; d i ces1 = 100 percent of initial value or100 na dc, whichever is greater. d h fe2 = 20 percent. i ces1 and h fe2 12 see 4.3.2 see 4.3.2 13 subgroup 2 of table i herein; d i ces1 = 100 percent of initial value or 100 na dc, whichever is greater. d h fe2 = 20 percent. subgroup 2 of table i herein; d i ces1 = 100 percent of initial value or 100 na dc, whichever is greater. d h fe2 = 20 percent. 14a and 14b optional optional 15 required not required 16 required not required 4.3.1. screening (janhc and jankc). screening of janc die shall be in accordance with mil-prf-19500. burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements.
mil-prf-19500/545d 11 4.3.2. power burn-in conditions. power burn-in conditions are as follows: v cb = 10 - 30 v dc t a = room ambient as defined in the general requirements, paragraph 4.5 of mil-std-750. power shall be applied to the device to achieve a junction temperature, t j =175 c minimum and a minimum p d = 75% of p t maximum rated as defined in paragraph 1.3 herein. 4.4. conformance inspection. conformance inspection shall be as specified herein. 4.4.1. group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. electrical measurements (end-points) shall be in accordance with the inspections of table i, subgroup 2 herein. 4.4.2. group b inspection. group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via of mil-prf-19500 (jans) and 4.4.2.1 herein. electrical measurements (end-points) shall be in accordance with group a, subgroup 2 herein. delta measurements shall be in accordance with table ii herein. see 4.4.2.2 herein and table vib of mil-prf-19500 for jan, jantx, and jantxv group b testing. electrical measurements (end-points) requirements shall be in accordance with group a, subgroup 2 herein. delta measurements shall be in accordance with table ii herein. 4.4.2.1. group b inspection table via (jans) of mil-prf-19500. subgroup method conditions b4 1037 v cb = 40 v dc 1 v. b5 1027 v cb = 10 v dc; 96 hours with p t = p t (max) at t a = 25 c, adjust t a to give t j = +275 c minimum. optionally the test may be performed for a minimum of 216 hours with p t adjusted to achieve a t j = +225 c minimum; sample size = 45, c = 0. in this case the ambient temperature shall be adjusted such that a minimum 75 percent of maximum rated p t (see1.3) is applied to the device under test. (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) b6 3131 see 4.5.2. 4.4.2.2. group b inspection, (jan, jantx, and jantxv). separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new assembly lot option is exercised, the failed assembly lot shall be scrapped. step method conditions 1 1039 steady-state life: test condition b, 340 hours min., v cb = 10 - 30 v dc, power shall be applied to achieve t j = +175 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t = 340 hours, t a = +200 c. n = 22, c = 0.
mil-prf-19500/545d 12 4.4.2.3 group b sample selection. samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3. group c inspection. group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil-prf-19500 and as follows. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein. delta measurements shall be in accordance with table ii herein. subgroup method conditions c2 2036 test condition e, (not applicable for u3 packages). c6 1037 v cb = 10 - 30 v dc, 6,000 cycles. 4.4.4. group e inspection. group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in table ix of mil-prf-19500. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein. delta measurements shall be in accordance with table ii herein. subgroup method condition sampling plan e1 1051 500 cycles 45 devices, c = 0 e2 1039 condition a: 500 hours 45 devices, c = 0 e3 not applicable e4 3131 r q jc = 15 c/w maximum (to-205) 22 devices, c = 0 (see 4.5.2) r q jc = 1.75 c/w maximum (u3) 22 devices, c = 0 (see 4.5.2) see 4.5.2 e5 not applicable 4.5. methods of inspection and test. methods of inspection and test shall be as specified in the appropriate tables and as follows. 4.5.1. pulse measurements. conditions for pulse measurements shall be as specified in section 4 of mil-std-750.
mil-prf-19500/545d 13 4.5.2. thermal resistance. thermal resistance measurements shall be conducted in accordance with method 3131 of mil-std-750. the following details shall apply: a. collector current magnitude during power application shall be 500 ma minimum dc. b. collector to emitter voltage magnitude shall be 10 v dc. c. reference temperature measuring point shall be the case. d. reference temperature measuring point shall be within the range +25 c t r +35 c. the chosen reference temperature shall be recorded before the test is started. e. mounting arrangement shall be with heat sink to case. f. maximum limit of r q jc shall be 15.0 c/w for (to-205) and 1.75 c/w for (u3). 4.5.3. thermal response ( d v be measurements). the d v be measurements shall be performed in accordance with method 3131 of mil-std-750. the d v be conditions (i h and v h ) and maximum limit shall be derived by each vendor. the chosen d v be measurement and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response curve shall be plotted. the chosen d v be shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. one-hundred percent safe operating area (soa) testing may be performed in lieu of thermal response testing herein provided that the appropriate conditions of temperature, time, current, and voltage to achieve die attach integrity are approved by the qualifying activity. the following parameter measurements shall apply: a. i m measurement ......................................................................... 10 ma. b. v ce measurement voltage ......................................................... 16 v (same as v h ). c. i h collector heating current ......................................................... 1 a minimum. d. v h collector-emitter heating voltage ........................................... 16 v minimum. e. t h heating time ............................................................................ 10 ms. f. t md measurement delay time ...................................................... 50 m s. g. t sw sample window time ............................................................ 10 m s maximum.
mil-prf-19500/545d 14 table i. group a inspection. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 1 2 / visual and mechanical 3/ examination 2071 n = 45 devices, c = 0 solderability 3/, 4 / resistance to solvents 3/, 4 /, 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3/, 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4/ 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4/ group a, subgroup 2 bond strength 3/, 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 subgroup 2 breakdown voltage, collector to emitter 3011 bias condition d, i c = 100 ma dc; i b = 0, pulsed (see 4.5.1) v (br)ceo 80 v dc collector to emitter cutoff current 3041 bias condition c, v ce = 60 v dc; v be = 0 i ces1 1.0 m a dc collector to emitter cutoff current 3041 bias condition c, v ce = 100 v dc; v be = 0 i ces2 1.0 ma dc collector to emitter cutoff current 3041 bias condition d, v ce = 40 v dc; i b = 0 i ceo 50 m a dc emitter to base cutoff current 3061 bias condition d, v eb = 4 v dc; i c = 0 i ebo1 1.0 m a dc emitter to base cutoff current 3061 bias condition d, v eb = 5.5 v dc; i c = 0 i ebo2 1.0 ma dc see footnote at end of table.
mil-prf-19500/545d 15 table i. group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 2 - continued forward current transfer ratio 2n5151 2/ 2n5153 3076 v ce = 5 v dc; i c = 50 ma dc, pulsed (see 4.5.1) h fe1 20 50 forward current transfer ratio 2n5151 2/ 2n5153 3076 v ce = 5 v dc; i c = 2.5 a dc, pulsed (see 4.5.1) h fe2 30 70 90 200 forward current transfer ratio 2n5151 2/ 2n5153 3076 v ce = 5 v dc; i c = 5 a dc, pulsed (see 4.5.1) h fe3 20 40 base-emitter voltage (non- saturated) 3066 test condition b, v ce = 5 v dc; i c = 2.5 a dc, pulsed (see 4.5.1) v be 1.45 v dc| base-emitter saturation voltage 3066 test condition a, i c = 2.5 a dc; i b = 250 ma dc, pulsed (see 4.5.1) v be(sat)1 1.45 v dc base-emitter saturation voltage 3066 test condition a, i c = 5 a dc; i b = 500 ma dc; pulsed (see 4.5.1) v be(sat)2 2.2 v dc collector-emitter saturation voltage 3071 i c = 2.5 a dc; i b = 250 ma dc, pulsed (see 4.5.1) v ce(sat)1 0.75 v dc collector-emitter saturation voltage 3071 i c = 5 a dc; i b = 500 ma dc, pulsed (see 4.5.1) v ce(sat)2 1.5 v dc subgroup 3 high temperature operation: t c = +150 c collector to emitter cutoff current 3041 bias condition a, v ce = 60 v dc; v be = +2 v dc i cex 500 m a dc see footnote at end of table.
mil-prf-19500/545d 16 table i, group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 4 continued low temperature operation t c = -55 c forward - current transfer ratio 2n5151 2/ 2n5153 3076 v ce = 5 v dc; i c = 2.5 a dc; pulsed (see 4.5.1) h fe4 15 25 subgroup 4 common-emitter, small- signal, short-circuit, forward-current transfer ratio 2n5151 2/ 2n5153 3206 v ce = 5 v dc; i c = 100 ma dc; f = 1 khz h fe 20 50 magnitude of common- emitter, small-signal short- circuit, forward-current, transfer ratio 2n5151 2/ 2n5153 3306 v ce = 5 v dc; i c = 500 ma dc, f = 10 mhz |h fe | 6 7 open-circuit output capacitance 3236 v cb = 10 v dc; i e = 0, f = 1 mhz c obo 250 pf switching time i c = 5 a dc; i b1 = 500 ma dc t on 0.5 m s i b2 = -500 ma dc t s 1.4 m s v be(off) = 3.7 v dc t f 0.5 m s r l = 6 w , (see figure 4) t off 1.5 m s see footnote at end of table.
mil-prf-19500/545d 17 table i, group a inspection - continued. inspection 1/ mil-std-750 symbol limits unit method conditions min max subgroup 5 safe operating area (d.c.) 3051 pre-pulse condition for each test: v ce = 0; i c = 0; t c = +25 c pulse condition for each test: t p = 1 sec. 1 cycle. t c = +25 c, (see figure 8) test # 1 v ce = 5.0 v dc, i c = 2 a dc for to39/5 v ce = 5.8 v dc, i c = 2 a dc for u3, unheatsunk (see note 3) or tbd test # 2 v ce = 32 v dc, i c = 310 ma dc for to39/5 v ce = 32 v dc, i c = 360 ma dc for u3, unheatsunk (see note 3) or tbd test # 3 v ce = 80 v dc, i c = 12.5 ma dc for to39/5 v ce = 80 v dc, i c = 14.5 ma dc for u3, unheatsunk (see note 3) or tbd safe operating area (unclamped inductive) t c = +25 c; r bb1 = 10 w ; r bb2 = 100 w ; l = 0.3 mh; rl = 0.1 w ; v cc = 10 v dc; v bb1 = 10 v dc; v bb2 = 4 v dc; i cm = 10 a dc (see figure 6) end point electrical measurements see table i, subgroup 2 subgroups 6 and 7 not applicable 1/ for sampling plan see mil-prf-19500. 2/ for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3/ separate samples may be used. 4/ not required for jans devices. 5/ not required for laser marked devices.
mil-prf-19500/545d 18 table ii. groups b, c and e delta electrical measurements. 1 / 2 / 3 / steps inspection mil-std-750 symbol limits unit method conditions min max 1. forward - current transfer ratio 3076 i c = 2.5 v dc; v ce = 5 v dc, pulsed (see 4.5.1) d h fe2 20 percent change from initial reading. 1/ the delta measurements for table via (jans) of mil-prf-19500 are as follows: subgroups 4 and 5, see table ii herein, step 1. 2/ the delta measurements for table vib (jan, jantx and jantxv) of mil-prf-19500 are as follows: all subgroups, see table ii herein, step 1. 3/ the delta measurements for table vii of mil-prf-19500 are as follows: subgroup 6, see table ii herein, step 1. 4/ the delta measurements for 4.4.4 are as follows: subgroups 1 and 2, see table ii herein, step 1.
mil-prf-19500/545d 19 figure 6. maximum safe operating area. r bb1 = 10 w r bb2 = 100 w l = 0.3 mh r l = 0.1 w v cc = 10 v dc i c = 10 na v bb1 = 10 v dc v bb2 = 4 v dc figure 7. unclamped inductive load energy test circuit.
mil-prf-19500/545d 20 notes: 1. v gen is -30 pulse (from 0 v) into a 50 ohm termination. 2. the v gen waveform is supplied by a generator with the following characteristics: t r 15 ns, t f = 15 ns, z out = 50 ohm, duty cycle 2 percent. 3. waveforms are monitored on an oscilloscope with the following characteristics: t r 15 ns, r in 3 10 m w , c in 11.5 pf. 4. resistors shall be noninductive types. 5. the dc power supplies may require additional bypassing in order to minimize ringing. 6. an equivalent circuit may be used. figure 8. switching time test circuit.
mil-prf-19500/545d 21 5. packaging 5.1. packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1. intended use. the notes specified in mil-prf-19500 are applicable to this specification. 6.2. acquisition requirements. acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. lead finish (see 3.4.2). d. type designation and product assurance level. e. packaging requirements (see 5.1). 6.3 qualification. with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturers list qml-19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center, columbus, attn: dscc-vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4. suppliers of janhc and jankc die. the qualified janhc and jankc suppliers with the applicable letter version (example janhca2n5151) will be identified on the qml. janhc and jankc ordering information manufacturer pin 33178 34156 43611 2n5151 2n5153 janhca2n5151 janhca2n5153 janhcb2n5151 janhcb2n5153 janhcc2n5151 janhcc2n5153 2n5151 2n5153 jankca2n5151 jankca2n5153 jankcb2n5151 jankcb2n5153 janhcc2n5151 janhcc2n5153 6.5. changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes.
mil-prf-19500/545d 22 custodians: preparing activity: air force - 11 dla - cc navy - nw nasa - na dla - cc (project 5961-2399)
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the refere nced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/545d 2. document date 010727 3. document title semiconductor device, transistor, pnp, silicon, power types 2n5151, 2n5153, 2n5151l, 2n5153l, 2n5151u3, and 2n5153u3 jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc-vac, p. o. box 3990, columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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