product specifications semiconductor technology, inc. 3131 s. e. jay street, stuart, fl 34997 type : it120a/71 ph: (561)283 - 4500 fax: (561)286 - 8914 website: http://www.semi - tech - inc.com case outl ine: to - 71 npn silicon dual differential transistor absolute maximum rating: collector to base bv cbo 45 vdc emitter to base bv ebo 7.0 vdc collector to emitter bv ceo 45 vdc collector current i c 50 m adc power dissipation t a = 25 c p d watts power dissipation t c = 25 c p d 0.5 (both sides) watts storage temperature t stg - 65 to +200 c operating temperature t j - 65 to +200 c lead temperature from case t l c electrical characteristics ta @ 25 c parameters symbol test conditions min ty p max unit collector to collector voltage bv cco 60 vdc emitter to base voltage bv ebo vdc collector to emitter voltage bv ceo(sus) i c =1.0ma 45 vdc collector to emitter voltage bv ceo vdc collector cutoff current i cbo v cb =45v 1.0 na collec tor cutoff current i cbo v cb =45v, t a =150 c 10 m a collector cutoff current i cex m a collector cutoff current i cex m a emitter cutoff current i ebo v eb =5.0v 1.0 na d.c. current gain pulsed* h fe i c =10 m a, v ce =5.0v 200 - d.c. current gain pulsed* h fe i c =1.0ma, v ce =5.0v 225 - d.c. current gain pulsed* h fe i c =10 m a, v ce =5.0v, t a = - 55 c 75 - d.c. current gain pulsed* h fe - d.c. current gain pulsed* h fe - saturation voltage* v ce(sat) i c =0.5ma, i b =0.05ma 0.5 vdc saturation voltage* v c e(sat) vdc base emitter voltage* v be(sat) vdc base emitter voltage* v be(sat) vdc base emitter voltage* v be(on) i c =10 m a, v ce =5.0v 0.7 vdc current gain at f = h fe - emitter transition capacitance c te v eb =0.5v 2.5 pf collector to col lector capacitance c c1 - c2 v cc =0 4.0 pf collector to collector leakage current i c1 - c2 v cc = 60v 10 na output capacitance c ob v cb =5.0v 2.0 pf frequency cutoff f & b mhz transition frequency f t i c =10 m a, v ce =5.0v i c =1.0ma, v ce =5.0v 10 220 mhz notes: *pulse width 300usec 2% duty cycle page 1 of 2
type: it120ato71 small signal characteristics symbol min typ max units input impedance ohms voltage feedback ratio x10 - 4 output admittance m mhos base curren t differential i c = 10a v ce = 5v | i b1 ? i b2 | 2.5 na dc current gain ratio h fe1 /h fe2 base - emitter voltage differential i c =10 m a, v ce =5.0v ? v be1 - v be2 ? 1.0 mv base - emitter voltage differential change due to temp i c =10 m a, v ce =5.0 v t a = - 55 c to +125 c d (v be1 - v be2 ) 3 m v/ c switching characteristics symbol min typ max units turn - on time t on ns turn - off time t off ns delay time t d ns rise time t r ns storage time t s ns fall time t f ns functi onal test symbol min typ max units common - emitter amplifier power gain gpe db power output pout watt collector efficiency h % power output pout watt page 2 of 2
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