symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 16.7 25 40 50 r jc 3 4 c/w thermal characteristicsparameter units maximum junction-to-ambient a,g t 10s r ja c/wc/w maximum junction-to-case f steady-state t a =25c p dsm t c =25c maximum junction-to-ambient a,g steady-state power dissipation a junction and storage temperature range p d t c =100c v 20 gate-source voltage drain-source voltage a mj i d pulsed drain current c 1210 40 14 9.8 t a =70c power dissipation b avalanche current c repetitive avalanche energy l=0.1mh c continuous draincurrent b,h maximum units parameter t c =25c t c =100c 40 absolute maximum ratings t a =25c unless otherwise noted v c 3718 -55 to 175 w 2.51.6 AOD454An-channel enhancement mode field effect transistor features v ds (v) = 40v i d = 12a (v gs = 10v) r ds(on) < 30m (v gs = 10v) r ds(on) < 40m (v gs = 4.5v) 100% uis tested! 100% rg tested! general description the AOD454A uses advanced trench technology anddesign to provide excellent r ds(on) with low gate charge. with the excellent thermal resistance of thedpak package, this device is well suited for high current load applications. -rohs compliant -halogen free* g ds g to-252 d-pak top view s bottom view d g s alpha & omega semiconductor, ltd. www.aosmd.com
AOD454A symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 na v gs(th) 1.7 2.5 3 v i d(on) 40 a 24 30 t j =125c 37 46 30 40 g fs 25 s v sd 0.76 1 v i s 2.5 a c iss 516 650 pf c oss 82 pf c rss 43 pf r g 4.6 q g 8.3 10.8 nc q gs 2.3 nc q gd 1.6 nc t d(on) 6.4 ns t r 3.6 ns t d(off) 16.2 ns t f 6.6 ns t rr 18 24 ns q rr 10 nc components in life support devices or systems are not authorized. aos does not assume any liability arisingout of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. drain-source breakdown voltageon state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v ds =40v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain currentgate-body leakage current i dss a body diode reverse recovery charge i f =12a, di/dt=100a/ s body diode reverse recovery time v gs =10v, i d =12a reverse transfer capacitance i f =12a, di/dt=100a/ s gate threshold voltage v ds =v gs i d =250 a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistanceforward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters v gs =4.5v, i d =8a i s =1a,v gs =0v v ds =5v, i d =12a m turn-on rise timeturn-off delaytime v gs =10v, v ds =20v, r l =1.6 , r gen =3 turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =20v, f=1mhz switching parameters total gate charge tbd gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =20v, i d =12a tbd a: the value of r ja is measured with the device in a still air environment with t a =25c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150c, using t 10s junction-to-ambient thermal resistance. b. the power dissipation p d is based on t j(max) =175c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.c: repetitive rating, pulse width limited by junction temperature t j(max) =175c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of t j(max) =175c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. h. the maximum current rating is limited by bond-wires.*this device is guaranteed green after data code 8x11 (sep 1 st 2008). rev2: oct 2008 alpha & omega semiconductor, ltd. www.aosmd.com
AOD454A typical electrical and thermal characteristics 150 mj 0 10 20 30 40 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v 4.0v 10v 4.0v vgs=3.0v 4.5v 0 10 20 30 40 1.5 2 2.5 3 3.5 4 4.5 5 v gs (volts) figure 2: transfer characteristics i d (a) 22 24 26 28 30 32 34 36 38 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =12a v gs =4.5v i d =8a 10 20 30 40 50 60 70 80 3 4 5 6 7 8 9 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) v ds =5v v gs =4.5v v gs =10v i d =12a 25c 125c 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AOD454A typical electrical and thermal characteristics 150 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 q g (nc) figure 7: gate-charge characteristics v gs (volts) 10 100 1000 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss 0.1 1 10 100 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100ms 100 s v ds =20v i d =12a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =3c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c 10 s alpha & omega semiconductor, ltd. www.aosmd.com
AOD454A 150 typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t case (c) figure 13: current de-rating (note b) current rating i d (a) 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-ambient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal impedance (note g) z ? ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t case (c) figure 12: power de-rating (note b) power dissipation (w) alpha & omega semiconductor, ltd. www.aosmd.com
AOD454A - + vd c ig vds d u t - + vd c vgs v gs 10v q g q gs q gd c harge g ate c harge test c ircuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs r g du t - + v dc l vgs vds id vgs bv i u nclam ped inductive s witching (uis) test circuit & w aveform s vds a r d ss 2 e = 1/2 li a r a r ig v gs - + v dc d u t l v gs vds isd isd d iode r ecovery test c ircuit & w aveform s vds - v ds + i f di/dt i r m rr vdd v dd q = - idt t rr alpha & omega semiconductor, ltd. www.aosmd.com
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