number: db-051 june 2008 / c page 1 semiconductor tak cheong ? 300 mw do-34 hermetically sealed glass - high voltage switching diodes absolute maximum ratings t a = 25c unless otherwise noted symbol parameter value units v rrm maximum repetitive reverse voltage 250 v t stg storage temperature range -65 to +150 c t j operating junction temperature +150 c i f (av) average rectified forward current 200 ma i fsm non-repetitive peak forward current pulse width = 1.0 second pulse width = 1.0 second 1.0 4.0 a a these ratings are limiting values above which the serviceability of the diode may be impaired. thermal characteristics symbol parameter value units p d power dissipation 300 mw specification features: ? do-34 package (jedec) ? through-hole device type mounting ? hermetically sealed glass ? compression bonded construction ? all external surfaces are corrosion resistant and lads are readily solderable ? rohs compliant ? solder hot dip tin (sn) terminal finish ? cathode indicated by polarity band electrical characteristics t a = 25c unless otherwise noted limits symbol parameter test condition min max unit b v breakdown voltage i r =100a 250 --- volts i r reverse leakage current v r =220v --- 10 a v f forward voltage i f =200ma --- 1.5 volts t rr reverse recovery time i f =i r =30ma r l =100 i rr =3ma --- 50 ns c capacitance v r =0v, f=1m hz --- 5.0 pf tc1ss244m cathode anode electrical symbol l 244 device marking diagram l : logo device code : tc1ss244 m axial lead do34
number: db-051 june 2008 / c page 2 semiconductor tak cheong ? typical characteristics 0 100 200 300 400 500 0 25 50 75 100 125 150 175 200 temperature [ ] pd - power dissipation [mw] f = 1mhz ta = 25 0.0 0.5 1.0 1.5 0 5 10 15 20 25 30 vr - reverse voltage [v] total capacitance [pf] ta=25 110 120 130 140 150 160 1 10 100 ir - reverse current [ua] bv - reverse voltage [v ] ta=25 0 10 20 30 40 50 60 10 100 vr - reverse voltage [v] ir - leakage current [na ] ta=25 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 0.001 0.100 10.000 1000.000 if - forw ard current [ma] vf - forward voltage [mv] 0 200 400 600 800 1000 0.01 0.1 1 10 100 if - forward current (ma) vf - forward voltage (mv) ta=125 ta=65 figure 3. reverse voltage vs reverse current bv ? 1.0ua to 100ua figure 4. reverse current vs reverse voltage ir ? 10v to 100v figure 5. forward voltage vs forward current vf ? 0.001ma to 800ma figure 6. forward voltage vs ambient temperature vf ? 0.01ma to 100ma (-40 to +125 deg c) figure 1. power dissipation vs ambient temperature valid provided leads at a distance of 0.8mm from case are kept at ambient temperature figure 2. total capacitance
number: db-051 june 2008 / c page 3 semiconductor tak cheong ? package outline package case outline do-34 do-34 millimeters inches dim min max min max a 0.46 0.55 0.018 0.022 b 2.16 3.04 0.085 0.120 c 25.40 38.10 1.000 1.500 d 1.27 1.90 0.050 0.075 notes: 1. all dimensions are within jedec standard. 2. do34 polarity denoted by cathode band.
number: db-100 april 14, 2008 / a disclaimer notice tak cheong ? notice the information presented in this document is for reference only. tak cheong reserves the right to make changes without notice for the specification of the products displayed herein. the product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controlle rs and other safety devices), tak cheong semiconductor co., ltd., or anyone on its behalf, assumes no responsi bility or liability for any damagers resulting from such improper use of sale. this publication supersedes & replaces all information reviously supplied. for additional information, please visit our website http://www.takcheong.com , or consult your nearest tak cheong?s sales office for further assistance.
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