SSFP8N50 starmos t power mosfet extremely high dv/dt capability low gate charge qg results in simple drive requirement 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatability description starmos is a new generation of high voltage n?channel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout with planar stripe dmos technology. application switching application absolute maximum ratings parameter max. units i d @tc=25 ? c continuous drain current,v gs @10v 8 i d @tc=100 ? c continuous drain current,v gs @10v 5.1 i dm pulsed drain current 32 a p d @t c =25 ? c power dissipation 125 w linear derating factor 1.0 w/ ? c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 510 mj i ar avalanche current 8 a e ar repetitive avalanche energy 13 mj dv/dt peak diode recovery dv/dt 5 v/ns t j t stg operating junction and storage temperature range C 55 to +175 soldering temperature, for 10 seconds 300(1.6mm from case) ? c mounting torque,6-32 or m3 screw 10 ibf in(1.1n m) thermal resistance parameter min. typ. max. units r jc junction-to-case 1.0 r cs case-to-sink,flat,greased surface 0.50 r ja junction-to-ambient 62 ? c/w pin1?gate pin2?drain pin1?source v dss = 500v i d25 = 8a r ds(on) = 0.85 1
SSFP8N50 starmos t power mosfet electrical characteristics @t j =25 ? c(unless otherwise specified) parameter min. typ. max. units test conditions v (br)dss drain-to-source breakdown voltage 500 v v gs =0v,i d = 250 a v (br)dss / t j breakdown voltage temp.coefficient 0.58 v/ ? c reference to 25 ? c,i d =1ma r ds(on) static drain-to-source on-resistance 0.85 v gs =10v,i d =4.8a v gs(th) gate threshold voltage 2.0 4.0 v v ds =v gs ,i d =250 a g fs forward transconductance 3.7 s v ds =50v,i d =4.8a 25 v ds =500v,v gs =0v i dss drain-to-source leakage current 250 a v ds =400v,v gs =0v,t j =150 ? c gate-to-source forward leakage 100 v gs =20v i gss gate-to-source reverse leakage -100 na v gs =-20v q g total gate charge 38 q gs gate-to-source charge 9 q gd gate-to-drain("miller") charge 16 nc i d =8a v ds =400v v gs =10v see fig.6 and 13 t d(on) turn-on delay time 11 t r rise time 23 t d(off) turn-off delay time 26 t f fall time 20 ns v dd =250v i d =8a r g =9 ? r d =30 ? l d internal drain inductance 4.5 l s internal source inductance 7.5 nh between lead, 6mm(0.25in.) from package and center of die contact c iss input capacitance 1005 c oss output capacitance 150 c rss reverse transfer capacitance 8 pf v gs =0v v ds =25v f =1.0mh z see figure 5 source-drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current . (body diode) 8 i sm pulsed source current . (body diode) 32 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 1.8 v t j =25 ? c,i s =8a,v gs =0v t rr reverse recovery time 250 ns q rr reverse recovery charge 2.5 nc t j =25 ? c,i f =8a di/dt=100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls + l d ) notes: repetitive rating;pulse width limited by i sd 8a,di/dt 100a/ s,v dd v (br)dss , max.junction temperature(see figure 11) tj 25 ? c l = 16mh, ias = 8 a, r g = 25 ? , pulse width 300 s; duty cycle 2% starting tj = 25c 2
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