? semiconductor components industries, llc, 2005 august, 2005 ? rev. 3 1 publication order number: nta4151p/d nta4151p, NTE4151P small signal mosfet ?20 v, ?760 ma, single p?channel, gate zener, sc?75, sc?89 features ? low r ds(on) for higher efficiency and longer battery life ? small outline package (1.6 x 1.6 mm) ? sc?75 standard gullwing package ? esd protected gate ? pb?free packages are available applications ? high side load switch ? dc?dc conversion ? small drive circuits ? battery operated systems such as cell phones, pdas, digital cameras, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source voltage v dss ?20 v gate?to?source voltage v gs 6.0 v continuous drain current (note 1) steady state i d ?760 ma power dissipation (note 1) sc?75 sc?89 steady state p d 301 313 mw pulsed drain current tp =10 s i dm 1000 ma operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i s ?250 ma lead temperature for soldering purposes (1/8 in from case for 10 s) t l 260 c gate?to?source esd rating ? (human body model, method 3015) esd 500 v thermal resistance ratings junction?to?ambient ? steady state (note 1) sc?75 sc?89 r ja 415 400 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). marking diagram & pin assignment http://onsemi.com xx = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. xx m r ds(on) typ i d max v (br)dss 0.26 @ ?4.5 v ?20 v 0.35 @ ?2.5 v ?760 ma 0.49 @ ?1.8 v p?channel mosfet g d s see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information sc?75 / sot?416 case 463 style 5 2 1 3 3 drain 1 gate 2 source sc?89 case 463c 2 1 3
nta4151p, NTE4151P http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?20 v zero gate voltage drain current i dss v gs = 0 v, v ds = ?16 v ?1.0 ?100 na gate?to?source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.0 10 a on characteristics (note 2) gate threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?0.45 v drain?to?source on resistance r ds(on) v gs = ?4.5 v, i d = ?350 ma 0.26 0.36 v gs = ?2.5 v, i d = ?300 ma 0.35 0.45 v gs = ?1.8 v, i d = ?150 ma 0.49 1.0 forward transconductance g fs v ds = ?10 v, i d = ?250 ma 0.4 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?5.0 v 156 pf output capacitance c oss 28 reverse transfer capacitance c rss 18 total gate charge q g(tot) v gs = ?4.5 v, v dd = ?10 v, i d = ?0.3 a 2.1 nc threshold gate charge q g(th) 0.125 gate?to?source charge q gs 0.325 gate?to?drain charge q gd 0.5 switching characteristics (note 3) turn?on delay time td (on) v gs = ?4.5 v, v dd = ?10 v, i d = ?200 ma, r g = 10 8.0 ns rise time t r 8.2 turn?off delay time td (off) 29 fall time t f 20.4 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = ?250 ma ?0.72 ?1.1 v 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device marking package shipping ? nta4151pt1 tn sc?75 3000/tape & reel nta4151pt1g tn sc?75 (pb?free) 3000/tape & reel NTE4151Pt1g tm sc?89 (pb?free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nta4151p, NTE4151P http://onsemi.com 3 typical electrical characteristics 0 50 100 150 200 250 04812162 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0 .7 ?i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = ?2.5 v t j = ?55 c t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 ?50 ?25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.4 0.8 1.2 1.6 2 .0 figure 1. on?region characteristics ?1.0 v ?1.25 v ?1.5 v v gs = ?1.75 v to ?4.5 v t j = 25 c ?v ds , drain?to?source voltage (volts) ?i d, drain current (amps) figure 2. transfer characteristics ?v gs , gate?to?source voltage (volts) ?i d, drain current (amps) t j = ?55 c t j = 25 c v ds ?10 v t j = 125 c figure 3. on?resistance vs. drain current and temperature ?i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = ?4.5 v t j = ?55 c t j = 25 c figure 4. on?resistance vs. drain current and temperature figure 5. on?resistance variation with temperature t j , junction temperature ( c) i d = ? 0.35 a v gs = ?4.5 v r ds(on), drain?to?source resistance (normalized) figure 6. capacitance variation drain?to?source voltage (volts) c, capacitance (pf) t j = 25 c c iss c oss c rss
nta4151p, NTE4151P http://onsemi.com 4 typical electrical characteristics ?v sd , source?to?drain voltage (volts) ?i s , source current (amps) v gs = 0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.2 0.4 0.6 0.8 1.0 0 1.6 4 1 0 q g , total gate charge (nc) ?v gs, gate?to?source voltage (volts) 1.2 2 3 5 0.4 figure 7. gate?to?source voltage vs. total gate charge 0.8 q t v ds = ?10 v i d = ?0.3 a t a = 25 c 2.0 2.4 t j = 25 c t j = 125 c figure 8. diode forward voltage vs. current q gs q gd 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) figure 9. normalized thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
nta4151p, NTE4151P http://onsemi.com 5 package dimensions sc?75 / sot?416 case 463?01 issue f style 5: pin 1. gate 2. source 3. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 sc?89 case 463c?03 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c?01 obsolete, new standard 463c?02. dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max g m 0.08 (0.003) x d 3 pl j ?x? ?y? a b y 12 3 n 2 pl k c ?t? seating plane m s
nta4151p, NTE4151P http://onsemi.com 6 1.10 0.043 0.53 0.020 0.50 0.020 mm inches scale 10:1 0.53 0.020 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. recommended soldering footprint for sc?75 and sc?89* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nta4151p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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