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profet ? data sheet bts550p infineon technologies ag page 1 of 14 2000-mar-24 smart highside high current power switch reverse save ? reverse battery protection by self turn on of power mosfet features ? overload protection ? current limitation ? short circuit protection ? overtemperature protection ? overvoltage protection (including load dump) ? clamp of negative voltage at output ? fast deenergizing of inductive loads 1) ? low ohmic inverse current operation ? diagnostic feedback with load current sense ? open load detection via current sense ? loss of v bb protection 2) ? e lectro s tatic d ischarge ( esd ) protection application ? power switch with current sense diagnostic feedback for 12 v and 24 v dc grounded loads ? most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in smart sipmos chip on chip technology. fully protected by embedded protection functions. in charge pump level shifter rectifier limit for unclamped ind. loads gate protection current limit 2 overvoltage protection + v bb profet out 3 & tab 1, 5 load gnd load output voltage detection r is is 4 i is i l v is i in logic gnd voltage sensor voltage source current sense logic esd temperature sensor r bb v in 1 ) with additional external diode. 2) additional external diode required for energized inductive loads (see page 9). product summary overvoltage protection v bb(az) 62 v output clamp v on ( cl ) 44 v operating voltage v bb(on) 5.0 ... 34 v on-state resistance r on 3.6 m ? load current (iso) i l(iso) 115 a short circuit current limitation i l(sc) 220 a current sense ratio i l : i is 21000 to-218ab/5 5 1 straight leads
data sheet bts550p infineon technologies ag page 2 2000-mar-24 pin symbol function 1outo output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3 ) 2 in i input, activates the power switch in case of short to ground 3v bb + positive power supply voltage, the tab is electrically connected to this pin. in high current applications the tab should be used for the v bb connection instead of this pin 4 ) . 4iss diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see truth table on page 7) 5outo output to the load. the pins 1 and 5 must be shorted with each other especially in high current applications! 3) maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4) v bb 40 v supply voltage for short circuit protection, t j,start =-40 ...+150c: (e as limitation see diagram on page 9) v bb 34 v load current (short circuit current, see page 5) i l self-limited a load dump protection v loaddump = u a + v s , u a = 13.5 v r i 5 ) = 2 ? , r l = 0.54 ? , t d = 200 ms, in, is = open or grounded v load dump 6 ) 80 v operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc), t c 25 c p tot 360 w inductive load switch-off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const., i l = 20 a, z l = 15 mh, 0 ? , see diagrams on page 10 e as 3j electrostatic discharge capability (esd) human body model acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993, c = 100 pf, r = 1.5 k ? v esd 4kv current through input pin (dc) current through current sense status pin (dc) see internal circuit diagrams on page 8 i in i is +15 , -250 +15 , -250 ma 3) not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy 4) otherwise add up to 0.5 m ? (depending on used length of the pin) to the r on if the pin is used instead of the tab. 5) r i = internal resistance of the load dump test pulse generator. 6) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839.
data sheet bts550p infineon technologies ag page 3 2000-mar-24 thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case : r thjc 7 ) -- -- 0.35 k/w junction - ambient (free air): r thja -- 30 -- electrical characteristics parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (tab to pins 1,5, see measurement circuit page 8) i l = 20 a, t j = 25 c: v in = 0, i l = 20 a , t j = 150 c: r on -- 2.8 5.0 3.6 6.5 m ? i l = 120 a , t j = 150 c: -- 6.5 v bb = 6v 8 ) , i l = 20 a , t j = 150 c: r on(static) -- 7 10 nominal load current 9 ) (tab to pins 1,5) iso 10483-1/6.7: v on = 0.5 v, t c = 85 c 10 ) i l(iso) 90 115 -- a maximum load current in resistive range (tab to pins 1,5) v on = 1.8 v, t c = 25 c: see diagram on page 12 v on = 1.8 v, t c = 150 c: i l(max) 390 215 -- -- -- -- a turn-on time 11 ) i in to 90% v out : turn-off time i in to 10% v out : r l = 1 ? , t j =-40...+150c t on t off 120 40 250 90 600 150 s slew rate on 11) (10 to 30% v out ) r l = 1 ? , t j =25c d v /dt on 0.2 0.5 0.8 v/ s slew rate off 11) (70 to 40% v out ) r l = 1 ? = , t j =25c -d v /dt off 0.2 0.6 1 v/ s 7) thermal resistance r thch case to heatsink (about 0.25 k/w with silicone paste) not included! 8 ) decrease of v bb below 10 v causes a slowly a dynamic increase of r on to a higher value of r on(static) . as long as v bin > v bin(u) max , r on increase is less than 10 % per second for t j < 85 c. 9) not tested, specified by design. 10) t j is about 105c under these conditions. 11 ) see timing diagram on page 13.
data sheet bts550p parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 4 2000-mar-24 inverse load current operation on-state resistance (pins 1,5 to pin 3) v bin = 12 v, i l = - 20 a t j = 25 c: see diagram on page 10 t j = 150 c: r on(inv) -- 2.8 5.0 3.6 6.5 m ? nominal inverse load current (pins 1,5 to tab) v on = -0.5 v, t c = 85 c 10 i l(inv) 90 115 -- a drain-source diode voltage (v out > v bb ) i l = - 20 a, i in = 0, t j = +150c - v on -- 0.6 0.7 v operating parameters operating voltage ( v in = 0) 8, 12 ) v bb(on) 5.0 -- 34 v undervoltage shutdown 13 ) v bin(u) 1.5 3.0 4.5 v undervolta g e start of char g e pump see diagram page 14 v bin(ucp) 3.0 4.5 6.0 v overvoltage protection 14 ) t j =-40c: i bb = 15 ma t j = 25...+150c: v bin(z) 60 62 -- 64 -- -- v standby current t j =-40...+25c: i in = 0 t j = 150c: i bb(off) -- -- 15 25 25 50 a 12 ) if the device is turned on before a v bb -decrease, the operating voltage range is extended down to v bin(u) . for the voltage range 0..34 v the device is fully protected against overtemperature and short circuit. 13 ) v bin = v bb - v in see diagram on page 8. when v bin increases from less than v bin(u) up to v bin(ucp) = 5 v (typ.) the charge pump is not active and v out v bb - 3 v. 14) see also v on(cl) in circuit diagram on page 9.
data sheet bts550p parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 5 2000-mar-24 protection functions short circuit current limit (tab to pins 1,5) 15 v on = 12 v, time until shutdown max. 350 s t c =-40 c: t c =25 c: t c =+150 c: i l(scp) 100 110 120 190 220 210 350 330 310 a short circuit shutdown delay after input current positive slope, v on > v on(sc) min. value valid only if input "off-signal" time exceeds 30 s t d(sc) 80 -- 350 s output clamp 16 ) i l = 40 ma: (inductive load switch off) - v out(cl) 14 17 20 v output clamp (inductive load switch off) at v out = v bb - v on(cl) (e.g. overvoltage) i l = 40 ma v on(cl) 40 44 47 v short circuit shutdown detection voltage (pin 3 to pins 1,5) v on(sc) -- 6 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery reverse battery voltage 17 ) - v bb -- -- 32 v on-state resistance (pins 1,5 to pin 3) t j = 25 c: v bb = -12v, v in = 0, i l = - 20 a, r is = 1 k ? t j = 150 c: r on(rev) -- 3.4 -- 4.3 7.5 m ? integrated resistor in v bb line t j =25 c: t j =150 c: r bb 90 105 110 125 135 150 ? 15 ) short circuit is a failure mode. the device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. the lifetime will be reduced under such conditions. 16 ) this output clamp can be "switched off" by using an additional diode at the is-pin (see page 8). if the diode is used, v out is clamped to v bb - v on(cl) at inductive load switch off. 17 ) the reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). note that under off-conditions ( i in = i is = 0) the power transistor is not activated. this results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! increasing reverse battery voltage capability is simply possible as described on page 9.
data sheet bts550p parameter and conditions symbol values unit at t j = -40 ... +150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 6 2000-mar-24 diagnostic characteristics current sense ratio, i l = 120 a, t j =-40 c: static on-condition, t j =25 c: k ilis = i l : i is , t j =150 c: v on < 1.5 v 18) , i l = 20 a, t j =-40 c: v is < v out - 5 v, t j =25 c: v bin > 4.0 v t j =150 c: see dia g ram on pa g e 11 i l = 12 a, t j =-40 c: t j =25 c: t j =150 c: i l = 6 a, t j =-40 c: t j =25 c: t j =150 c: k ilis 19 000 19 000 18 000 18 500 18 500 18 000 16 000 17 000 17 500 12 000 14 000 16 000 20 600 20 500 19 000 22 300 21 400 19 500 23 500 22 000 19 900 28 000 24 000 20 500 23 000 22 500 21 500 26 000 25 000 23 000 30 000 26 500 24 500 46 000 34 000 30 000 i is =0 by i in =0 (e.g. during deenergizing of inductive loads) : sense current saturation i is,lim 6.5 -- -- ma current sense leakage current i in = 0: v in = 0, i l 0: i is(ll) i is(lh) -- -- -- 2 0.5 -- a current sense settling time 19 ) t s(is) -- -- 500 s overvoltage protection t j =-40 c: i bb = 15 ma t j = 25...+150 c: v bis(z) 60 62 -- 64 -- -- v input input and operatin g current ( see dia g ram pa g e 12 ) in grounded (v in = 0) i in(on) -- 0.8 1.5 ma input current for turn-off 20) i in(off) -- -- 80 a 18) if v on is higher, the sense current is no longer proportional to the load current due to sense current saturation, see i is,lim . 19 ) not tested, specified by design. 20 ) we recommend the resistance between in and gnd to be less than 0.5 k ? for turn-on and more than 500 k ? for turn-off. consider that when the device is switched off (i in = 0) the voltage between in and gnd reaches almost v bb .
data sheet bts550p infineon technologies ag page 7 2000-mar-24 truth table input current output current sense remark level level i is normal operation l h l h 0 nominal =i l / k ilis , up to i is =i is,lim very high load current hh i is, lim up to v on =v on(fold back) i is no longer proportional to i l current- limitation hh 0 v on > v on(fold back) if v on >v on(sc) , shutdown will occure short circuit to gnd l h l l 0 0 over- temperature l h l l 0 0 short circuit to v bb l h h h 0 150 c, latch function 23 ) t j >150 c, with auto-restart on cooling x x short circuit to gnd protection switches off when v on >6 v typ. (when first turned on after approx. 180 s) xx overvoltage shutdown -- output negative voltage transient limit to v bb - v on(cl) xx to v out = -19 v typ x 24 ) x 24) overtemperature reset by cooling: t j < t jt (see diagram on page 14) short circuit to gnd: shutdown remains latched until next reset via input (see diagram on page 13) 21 ) low ohmic short to v bb may reduce the output current i l and can thus be detected via the sense current i is . 22 ) power transistor "off", potential defined by external impedance. 23 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 5). no latch between turn on and t d(sc) . 24 ) can be "switched off" by using a diode d s (see page 8) or leaving open the current sense output.
data sheet bts550p infineon technologies ag page 8 2000-mar-24 terms profet v in is out bb v in i is i in v bb i bb i l v out v on 2 4 3 1,5 r is v is v bin r in d s v bis two or more devices can easily be connected in parallel to increase load current capability. r on measurement layout sense v force contacts out force bb contacts 5.5 mm contacts (both out pins parallel) input circuit (esd protection) in zd in i v bb r bb v z,in v bin v in when the device is switched off (i in = 0) the voltage between in and gnd reaches almost v bb . use a mechanical switch, a bipolar or mos transistor with appropriate breakdown voltage as driver. v z,in = 64 v (typ). current sense status output is is r is i zd is v bb v bb r z,is v v z,is = 64 v (typ.), r is = 1 k ? nominal (or 1 k ? /n, if n devices are connected in parallel). i s = i l / k ilis can be driven only by the internal circuit as long as v out - v is > 5 v. if you want to measure load currents up to i l(m) , r is should be less than v bb - 5 v i l(m) / k ilis . note: for large values of r is the voltage v is can reach almost v bb . see also overvoltage protection. if you don't use the current sense output in your application, you can leave it open. short circuit detection fault condition: v on > v on(sc) (6 v typ.) and t> t d(sc) (80 ...350 s). short circuit detection logic unit + v bb out v on inductive and overvoltage output clamp + v bb out profet v z1 v on d s is v out v zg v on is clamped to v on(cl) = 42 v typ. at inductive load switch-off without d s , v out is clamped to
data sheet bts550p infineon technologies ag page 9 2000-mar-24 v out(cl) = -19 v typ. via v zg . with d s , v out is clamped to v bb - v on(cl) via v z1 . using d s gives faster deenergizing of the inductive load, but higher peak power dissipation in the profet. in case of a floating ground with a potential higher than 19v referring to the out ? potential the device will switch on, if diode ds is not used. overvoltage protection of logic part + v bb v out in bb r signal gnd logic profet v z,is r is in r is v z,in r v v z,vis r bb = 120 ? typ . , v z,in = v z,is = 64 v typ., r is = 1 k ? nominal. note that when overvoltage exceeds 69 v typ. a voltage above 5v can occur between is and gnd, if r v , v z,vis are not used. reverse battery protection logic is in is r v r out l r power gnd signal gnd v bb - power transistor in r bb r d s d r v 1 k ?, r is = 1 k ? nominal. add r in for reverse battery protection in applications with v bb above 16 v 17) ; recommended value: 1 r in + 1 r is + 1 r v = 0.1a | v bb | - 12v if d s is not used (or 1 r in = 0.1a | v bb | - 12v if d s is used). to minimize power dissipation at reverse battery operation, the summarized current into the in and is pin should be about 120ma. the current can be provided by using a small signal diode d in parallel to the input switch, by using a mosfet input switch or by proper adjusting the current through r is and r v . v bb disconnect with energized inductive load provide a current path with load current capability by using a diode, a z-diode, or a varistor. ( v zl < 72 v or v zb < 30 v if r in =0). for higher clamp voltages currents at in and is have to be limited to 250 ma. version a: profet v in out is bb v bb v zl version b: profet v in out is bb v bb v zb note that there is no reverse battery protection when using a diode without additional z-diode v zl , v zb . version c: sometimes a neccessary voltage clamp is given by non inductive loads r l connected to the same switch and eliminates the need of clamping circuit: profet v in out is bb v bb r l
data sheet bts550p infineon technologies ag page 10 2000-mar-24 inverse load current operation profet v in out is bb v bb v out - i l r is v is v in + - + - i is the device is specified for inverse load current operation ( v out > v bb > 0v ). the current sense feature is not available during this kind of operation ( i is = 0). with i in = 0 (e.g. input open) only the intrin- sic drain source diode is conducting resulting in considerably increased power dissipation. if the device is switched on (v in = 0), this power dissipation is decreased to the much lower value r on(inv) * i 2 (specifications see page 4). note: temperature protection during inverse load current operation is not possible! inductive load switch-off energy dissipation profet v in out is bb e e e e as bb l r e load l r l { z l r is i in v bb i (t) l energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150 c, v bb = 12 v, r l = 0 ? l [h] i l [a] externally adjustable current limit if the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). the device will be turned off, if the threshold voltage of t2 is reached by i s *r is . after a delay time defined by r v *c v t1 will be reset. the device is turned on again, the short circuit current is defined by i l(sc) and the device is shut down after t d(sc) with latch function. profet is in is r v r powe r gnd signal gnd v bb out v c load r t1 t2 in signal v bb 1 10 100 1000 10000 100000 1 10 100 1000
data sheet bts550p infineon technologies ag page 11 2000-mar-24 characteristics current sense versus load current: i is = f ( i l ) i is [ma] i l [a] current sense ratio: k ilis = f ( i l ), t j = -40 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 25 c k ilis i l [a] current sense ratio: k ilis = f ( i l ), t j = 150 c k ilis i l [a] 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 max min 12000 14000 16000 18000 20000 22000 24000 26000 28000 30000 32000 34000 36000 38000 40000 42000 44000 46000 0 20 40 60 80 100 120 min typ max 16000 18000 20000 22000 24000 26000 28000 30000 32000 34000 0 20 40 60 80 100 120 min typ max 16000 18000 20000 22000 24000 26000 28000 30000 0 20 40 60 80 100 120 typ min max
data sheet bts550p infineon technologies ag page 12 2000-mar-24 typ. current limitation characteristic i l = f (v on , t j ) i l [a] v on [v] in case of v on > v on(sc) (typ. 6 v) the device will be switched off by internal short circuit detection. typ. on-state resistance r on = f (v bb , t j ) ; i l = 20 a; v in = 0 r on [mohm] v bb [v] typ. input current i in = f ( v bin ), v bin = v bb - v in i in [ma] v bin [v] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20406080 0 100 200 300 400 500 600 700 800 0 5 10 15 20 v on > v on( s c) o n l y f o r t < t d( s c ) (o t her w is e imme d iat e shut d o w n ) t j = -40c t j = 25c t j = 150c v on( f b) 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 static dynamic t j = 150c 85c 25c -40c 40
data sheet bts550p infineon technologies ag page 13 2000-mar-24 timing diagrams figure 1a: switching a resistive load, change of load current in on-condition: i in t v out i l i is t son(is) tt slc(is) load 1 load 2 soff(is) t t t on off slc(is) 90% dv/dton dv/dtoff 10% the sense signal is not valid during a settling time after turn-on/off and after change of load current. figure 2a: switching motors and lamps: i in t v out i il i is sense current saturation can occur at very high inrush currents (see i is,lim on page 6). figure 2b: switching an inductive load: i in t v out i l i is figure 3a: short circuit: shut down by short circuit detection, reset by i in = 0. i in i l i l(scp) i is t t d(sc) v out =0 v out >>0 shut down remains latched until next reset via input.
data sheet bts550p infineon technologies ag page 14 2000-mar-24 figure 4a: overtemperature reset if t j < t jt i in t i is v out t j auto restart figure 6a: undervoltage restart of charge pump, overvoltage clamp 0 2 4 6 04 v out v bin(ucp) v in = 0 i in = 0 v on(cl) v bin(u) v bin(u) dynamic, short undervoltage not below v on(cl) v bb
data sheet bts550p infineon technologies ag page 15 2000-mar-24 package and ordering code all dimensions in mm to-218ab/5 option e3146 ordering code e3146 q67060-s6952a3 published by infineon technologies ag i gr ., bereichs kommunikation st.-martin-strasse 76, d-81541 m nchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life- support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support device or system, or to affect the safety or effectiveness of that device or system. life s upport devices or systems are int ended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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