sep.2000 a e d c q q v q h j f g t p k u 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v upi 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. w v u n p v n1 upc vpi vpc v v wpi wpc nc 1 mmmm 2.0 x 0.5 mm tab (5 typ.) pnuvw 21. 22. 23. f o v w u n n n w p wf o v p u p vf o o uf 234 5678 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 0.6 x 0.4 mm tab (18 typ.) (14 typ.) n b l s - dia. (2 typ.) r (2 typ.) t t c b gnd p v v cc s i gnd gnd out upi v u fo up upc f o in v v cc s i gnd gnd out vpi v v fo vp vpc f o in v v cc s i gnd gnd out wpi v w fo wp wpc f o in u n v n w n f o v n1 v nc gnd v cc f o w n v n u n o un s un o vn s vn o wn s wn u v w n description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM30CSJ060 is a 600v, 30 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 30 60 dimensions inches millimeters a 3.72 0.04 94.5 1.0 b 3.33 0.02 84.5 0.5 c 2.99 76.0 d 2.300 0.02 58.42 0.5 e 2.20 0.02 56.0 0.5 f 1.73 0.04 44.0 1.0 g 1.32 0.03 33.6 0.8 h 1.01 25.7 j 0.75 19.0 k 0.71 0.04 18.0 1.0 dimensions inches millimeters l 0.561 14.25 m 0.55 0.01 14.0 0.25 n 0.513 13.04 p 0.31 0.02 8.0 0.5 q 0.300 7.62 r 0.20 rad. rad. 5.0 s 0.18 dia. dia. 4.5 t 0.14 3.5 u 0.13 0.02 3.2 0.5 v 0.100 0.01 2.54 0.25 mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package outline drawing and circuit diagram
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m4 mounting screws 0.98 ~ 1.47 n m module weight (typical) 60 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part) v cc(prot.) 400 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n -v nc )v cin 20 volts fault output supply voltage (applied between u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc ) v fo 20 volts fault output current (sink current of u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, (t c = 25 c) i c 30 amperes peak collector current, (t c = 25 c) i cp 60 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 83 watts mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 39 53 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 80 amperes over current delay time t off(oc) v d = 15v 10 m s over temperature protection ot trip level 100 110 120 c ot r reset level 90 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 1825ma v d = 15v, v cin = 15v, v xp1 -v xpc 7 10 ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v cin = 15v, v ce = v ces , t j = 25 c 1.0 ma v cin = 15v, v ce = v ces , t j = 125 c 10 ma diode forward voltage v ec -i c = 30a, v d = 15v, v cin = 15v 2.5 3.5 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 30a 1.8 2.5 volts v d = 15v, v cin = 0v, i c = 30a, 1.9 2.6 volts t j = 125 c inductive load switching times t on 0.3 0.6 1.5 m s t rr v d = 15v, v cin = 0 ? 15v 0.12 0.3 m s t c(on) v cc = 300v, i c = 30a 0.3 1.0 m s t off t j = 125 c 2.0 2.8 m s t c(off) 0.6 1.5 m s thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each igbt 1.5 c/watt r th(j-c)f each fwdi 3.0 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.083 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 400 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , 4.0 ~ v d volts u n v n w n -v nc pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 2.5 m s mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package 0 1 2 3 4 5 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 00 10 50 20 30 40 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0 1.0 2.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 12 14 16 18 20 i c = 30a v cin = 0v t j = 25 o c t j = 125 o c 3.0 0 1.0 0 10 output characteristics (typical) collector-emitter voltage, v ce(sat) , (volts) collector current, i c , (amperes) 20 30 40 50 2.0 t j = 25 o c v cin = 0v v d = 17v 13 15 3.0 10 0 10 1 10 2 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t on 10 0 10 1 t off v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 10 1 10 2 10 -1 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) t c(on) 10 0 10 1 t c(off) v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 10 1 10 2 10 0 collector reverse current, ? c , (amperes) reverse recovery current vs. collector current (typical) 10 1 10 2 v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c reverse recovery current, i rr , (amperes) 00 1.0 3.0 10 0 00 emitter-collector voltage, v ec , (volts) collector reverse current, ? c , (amperes) diode forward characteristics 10 1 10 2 0.5 1.5 2.0 t j = 25 o c t j = 125 o c v d = 15v 2.5 80 90 100 110 120 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 12 14 16 18 20 t j = 25 o c 80 90 100 110 120 over current trip level vs. temperature (typical) junction temperature, t j , ( o c) over current trip level % (normalized) -50 0 50 100 150 v d = 15v
sep.2000 mitsubishi intelligent power modules PM30CSJ060 flat-base type insulated package 00 0.5 1.0 1.5 2.0 2.5 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width, t fo , (ms) -50 0 50 100 150 v d = 15v 11 12 13 14 15 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t j , ( o c) uv trip-reset level, uv t , uv r , (volts) -50 150 050 100 uv t uv r time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 1.5 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)d = 3.0 o c/w 10 -2 10 -3
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