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notice of revision (nor) this revision described below has been authorized for the document listed. 1. date (yymmdd) 97-06-19 form approved omb no. 0704-0188 public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to department of defense, washington headquarters services, directorate for information operations and reports, 1215 jefferson davis highway, suite 1204, arlington, va 22202-4302, and to the office of management and budget, paperwork reduction project (0704-0188), washington, dc 20503. please do not ret urn your completed form to either of th ese addressed. ret urn completed form to the government issuing contracting officer for the contract/ procuring activity number listed in item 2 of this form. 2. procuring activity no. 3. dodaac 4. originator b. address (street, city, state, zip code) defense supply center, columbus 3990 east broad street columbus, oh 43216-5000 5. cage code 67268 6. nor no. 5962-r364-97 a. typed name (first, middle initial, last) 7. cage code 67268 8. document no. 5962-96571 9. title of document microcircuit, digital, radiation hardened, advanced cmos, octal buffer/line driver with three-state outputs, ttl compatible inputs, monolithic silicon 10. revision letter 11. ecp no. no users listed. a. current a b. new b 12. configuration item (or system) to which ecp applies all 13. description of revision sheet 1: revisions ltr column; add "b". revisions description column; add "changes in accordance with nor 5962-r364-97". revisions date column; add "97-06-19". revision level block; change a to b. rev status of sheets; for sheet 1 change a to b; for sheets 4, and 15 through 21, add "b". sheet block; change 14 to 21. sheet 4: add new paragraph which states; "3.1.1 microcircuit die. for the requirements for microcircuit die, see appendix a to this document." revision level block; add "b". sheets 15 through 21: add attached appendix a. continued on next sheet 14. this section for government use only a. (x one) x (1) existing document supplemented by the nor may be used in manufacture. (2) revised document must be received before manufacturer may incorporate this change. (3) custodian of master document shall make above revision and furnish revised document. b. activity authorized to approve change for government dscc -vac c. typed name (first, middle initial, last) monica l. poelking d. title chief, custom microelectronics team e. signature monica l. poelking f. date signed (yymmdd) 97-06-19 15a. activity accomplishing revision dscc -vac b. revision completed (signature) charles f. saffle, jr. c. date signed (yymmdd) 97-06-19 dd form 1695, apr 92 previous editions are obsolete.
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 15 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 2 of 8 10. scope 10.1 scope. this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mil-prf-38535 and the manufacturers approved qm plan for use in monolithic microcircuits, multichip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available a choice of radiation hardiness assurance (rha) levels are reflected in the pin. 10.2 pin. the pin shall be as shown in the following example: 5962 h 96571 01 v 9 a federal rha device device die die stock class designator type class code details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) drawing number 10.2.1 rha designator. device classes q and v rha identified die shall meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. 10.2.2 device type(s). the device type(s) shall identify the circuit function as follows: device type generic number circuit function 01 54acts244 radiation hardened, octal buffer/line driver with three-state outputs, ttl compatible inputs
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 16 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 3 of 8 10.2.3 device class designator. device class device requirements documentation q or v certification and qualification to the die requirements of mil-prf-38535. 10.2.4 die details. the die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 die physical dimensions. die type figure number 01 a-1 10.2.4.2 die bonding pad locations and electrical functions. die type figure number 01 a-1 10.2.4.3 interface materials. die type figure number 01 a-1 10.2.4.4 assembly related information. 01 a-1 10.3 absolute maximum ratings. see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions. see paragraph 1.4 within the body of this drawing for details. 20. applicable documents 20.1 government specifications, standards, bulletin, and handbooks. unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein.
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 17 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 4 of 8 specification military mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards mil-std-883 - test methods and procedures for microelectronics. handbook military mil-hdbk-103 - list of standardized military drawings (smds). (copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2 order of precedence. in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. requirements 30.1 item requirements. the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturers quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions. the design, construction and physical dimensions shall be as specified in mil-prf-38535 and the manufacturers qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions. the die physical dimensions shall be as specified in 10.2.4.1 and on figure a-1. 30.2.2 die bonding pad locations and electrical functions. the die bonding pad locations and electrical functions shall be as specified in 10.2.4.2 and on figure a-1. 30.2.3 interface materials. the interface materials for the die shall be as specified in 10.2.4.3 and on figure a-1. 30.2.4 assembly related information. the assembly related information shall be as specified in 10.2.4.4 and figure a-1. 30.2.5 truth table(s). the truth table(s) shall be as defined within paragraph 3.2.3 of the body of this document.
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 18 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 5 of 8 30.2.6 radiation exposure circuit. the radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of this document. 30.3 electrical performance characteristics and post-irradiation parameter limits. unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table i of the body of this document. 30.4 electrical test requirements. the wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table i. 30.5 marking. as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the pin listed in 10.2 herein. the certification mark shall be a qm or q as required by mil-prf-38535. 30.6 certification of compliance. for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturers product meets, for device classes q and v, the requirements of mil-prf-38535 and the requirements herein. 30.7 certificate of conformance. a certificate of conformance as required for device classes q and v in mil-prf-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. quality assurance provisions 40.1 sampling and inspection. for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturers quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. 40.2 screening. for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturers qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria defined within mil-std-883 tm 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 tm2010 or the alternate procedures allowed within mil-std-883 tm5004. 40.3 conformance inspection. 40.3.1 group e inspection. group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in table iia herein. group e tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4.4.4.3 and 4.4.4.4.
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 19 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 6 of 8 50. die carrier 50.1 die carrier requirements. the requirements for the die carrier shall be accordance with the manufacturers qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. 60. notes 60.1 intended use. microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 comments. comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614)-692-0536. 60.3 abbreviations, symbols and definitions. the abbreviations, symbols, and definitions used herein are defined with mil-prf-38535 and mil-std-1331. 60.4 sources of supply for device classes q and v. sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see 30.6 herein) to dscc-va and have agreed to this drawing.
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 20 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 7 of 8 figure a-1 o die physical dimensions die size: 111 x 81 mils. die thickness: 17 +/- 1 mils. o die bonding pad locations and electrical functions note: pad numbers reflect terminal numbers when placed in case outlines r, x (see figure 1).
standard microcircuit drawing defense supply center, columbus columbus, ohio 43216-5000 size a 5962-96571 revision level b sheet 21 dscc form 2234 apr 97 document no: 5962-96571 revision: b appendix a nor no: 5962-r364-97 appendix a forms a part of smd 5962-96571 sheet: 8 of 8 o interface materials top metallization: si al cu 9.0ka - 12.5ka backside metallization: none: backgrind. glassivation type: phosphorous doped sio2 thickness: 9.0ka - 11.0ka substrate: epitaxial layer on single crystal silicon. o assembly related information substrate potential: tied to vdd. special assembly instructions: bond pad #20 (vdd) first. do not wire bond the six probe id pads.
standard microcircuit drawing bulletin date: 97-06-19 approved sources of supply for smd 5962-96571 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc-va. this bulletin is superseded by the next dated revision of mil- hdbk-103 and qml-38535. standard microcircuit drawing pin vendor cage number vendor similar pin 1/ 5962h9657101v9a 65342 ut54acts244-vdie 5962H9657101Q9A 65342 ut54acts244-qdie 1/ caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 65342 utmc microelectronic systems 4350 centennial boulevard colorado springs, co 80907-3486 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.
notice of revision (nor) this revision described below has been authorized for the document listed. 1. date (yymmdd) 96-11-19 form approved omb no. 0704-0188 public reporting burden for this collection is estimated to average 2 hours per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to department of defense, washingtion headquarters services, directorate for information operations and reports, 1215 jefferson davis highway, suite 1204, arlington, va 22202-4302, and to the office of management and budget, paperwork reduction project (0704-0188), washington, dc 20503. please do not ret urn your completed form to either of th ese a ddressed. ret urn completed form to the government issuing contracting officer for the contract/ procuring activity number listed in item 2 of this form. 2. procuring activity no. 3. dodaac 4. originator b. address (street, city, state, zip code) defense supply center columbus 3990 east broad street columbus, oh 43216-5000 5. cage code 67268 6. nor no. 5962-r086-97 a. typed name (first, middle initial, last) 7. cage code 67268 8. document no. 5962-96571 9. title of document microcircuit, digital, radiation hardened, advanced cmos, octal buffer/line driver with three- state outputs, ttl compatible inputs, monolithic silicon 10. revision letter 11. ecp no. n/a a. current - b. new a 12. configuration item (or system) to which ecp applies all 13. description of revision sheet 1: revisions ltr column; add "a". revisions description column; add "changes in accordance with nor 5962-r086-97". revisions date column; add "96-11-19". revision level block; add "a". rev status of sheets; for sheet 1, 3, 7, and 8, add "a". sheet 3: footnote 4 /; following "derate", add "system". revision level block; add "a". output current (sink) i ol 10 / v = v or v in dd ss v = 0.4 v ol all 4.5 v and 5.5 v 1, 2, 3 12 ma output current (source) i oh 10 / v = v or v in dd ss v = v - 0.4 v oh dd all 4.5 v and 5.5 v 1, 2, 3 -12 ma revision level block; add "a". sheet 8: table ia; add the following: "10 / this test is guaranteed based on characterization data but not tested." table ib; in last column, change "let = 3 /" to "let = 3 / 4 /" in heading and change " 80" to " 120". table ib, add the following after footnote 3 /: "4 / tested to an let of 120 mev/(mg/cm ), with no latch-up (sel)." 2 revision level block; add "a". 14. this section for government use only a. (x one) x (1) existing document supplemented by the nor may be used in manufacture. (2) revised document must be received before manufacturer may incorporate this change. (3) custodian of master document shall make above revision and furnish revised document. b. activity authorized to approve change for government dscc-vac c. typed name (first, middle initial, last) monica l. poelking d. title chief, custom microelectronics e. signature monica l. poelking f. date signed (yymmdd) 96-11-19 15a. activity accomplishing revision dscc-vac b. revision completed (signature) jeff bowling c. date signed (yymmdd) 96-11-19 dd form 1695, apr 92 previous editions are obsolete.
revisions ltr description date (yr-mo-da) approved rev sheet rev sheet rev status of sheets rev sheet 1234567891011121314 pmic n/a prepared by thanh v. nguyen defense electronics supply center dayton, ohio 45444 standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense amsc n/a checked by thanh v. nguyen microcircuit, digital, radiation hardened, advanced cmos, octal buffer/line driver with three-state outputs, ttl compatible inputs, monolithic silicon approved by monica l. poelking drawing approval date 96-03-11 size a cage code 5962-96571 revision level 67268 sheet 1 of 14 desc form 193 jul 94 5962-e324-96 distribution statement a . approved for public release; distribution is unlimited.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 2 desc form 193a jul 94 1. scope 1.1 scope . this drawing documents two product assurance class levels consisting of high reliab ility (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 h 96571 01 v x c federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54acts244 radiation hardened, octal buffer/line driver with three-state outputs, ttl compatible inputs 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non-jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style r gdip1-t20 or cdip2-t20 20 dual-in-line x cdfp4-f20 20 flat pack 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 3 desc form 193a jul 94 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v ) .......................................... -0.3 v dc to +7.0 v dc dd dc input voltage range (v ) ......................................... -0.3 v dc to v + 0.3 v dc in dd dc output voltage range (v ) ...................................... -0.3 v dc to v + 0.3 v dc out dd dc input current, any one input (i ) ................................... 10 ma in latch-up immunity current (i ) ....................................... 150 ma lu storage temperature range (t ) .................................... -65 ( c to +150 ( c stg lead temperature (soldering, 5 seconds) ................................ +300 ( c thermal resistance, junction-to-case ( ) .............................. see mil-std- 1835 jc junction temperature (t ) ............................................ +175 ( c j maximum package power dissipation (p )............................... 1.0 w d 1.4 recommended operating conditions . 2 / 3 / supply voltage range (v ) .......................................... +4.5 v dc to +5.5 v dc dd input voltage range (v ) ............................................. +0.0 v dc to v in dd output voltage range (v ) ......................................... +0.0 v dc to v out dd case operating temperature range (t ) ................................. -55 ( c to +125 ( c c maximum input rise and fall time at v = 4.5 v (t , t ) ..................... 1 ns/v 4 / dd r f 1.5 radiation features . 5 / total dose ........................................................ > 1 x 10 rads (si) 6 single event phenomenon (sep) effective linear energy threshold (let) no upsets (see 4.4.4.4) .................... > 80 mev/(mg/cm ) 2 dose rate upset (20 ns pulse)......................................... > 1 x 10 rads (si)/s 9 latch-up ......................................................... none dose rate survivability ............................................... > 1 x 10 rads (si)/s 12 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solitation. specification military mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards military mil-std-883 - test methods and procedures for microelectronics. mil-std-973 - configuration management. mil-std-1835 - microcircuit case outlines. 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / unless otherwise noted, all voltages are referenced to v . ss 3 / the limits for the parameters specified herein shall apply over the full specified v range and case temperature range of - dd 55 ( c to +125 ( c unless otherwise noted. 4 / derate propagation delays by difference in rise time to switch point for t or t > 1 ns/v. rf 5 / radiation testing is performed on the standard evaluation circuit.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 4 desc form 193a jul 94 handbooks military mil-hdbk-103 - list of standard microcircuit drawings (smd's). mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specification, standards, bulletin, and handbook are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 1. 3.2.3 truth table . the truth table shall be as specified on figure 2. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 3. 3.2.5 switching waveforms and test circuits . the switching waveforms and test circuits shall be as specified on figure 4. 3.2.6 irradiation test connections . the irradiation test connections shall be as specified in table iii. 3.3 electrical performance characteristics and postirradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table ia and shall apply over the full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf- 38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to desc-ec prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 5 desc form 193a jul 94 3.8 notification of change for device class m . for device class m, notification to desc-ec of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-std-973. 3.9 verification and review for device class m . for device class m, desc, desc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 37 (see mil-prf-38535, appendix a). 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil- prf-38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t = +125 ( c, minimum. a b. interim and final electrical test parameters shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil- std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil-prf-38535, appendix b or as modified in the device manufacturer's quality management (qm) plan. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.3.1 electrostatic discharge sensitivity (esds) qualification inspection . esds testing shall be performed in accordance with mil-std-883, method 3015. esds testing shall be measured only for initial qualification and after process or design changes which may affect esds classification. 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 or as specified in qm plan including groups a, b, c, d, and e inspections and as specified herein except where option 2 of mil-prf-38535 permits alternate in-line control testing. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4).
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 6 desc form 193a jul 94 table ia. electrical performance characteristics . test symbol test conditions 1 / -55 ( c t +125 ( c c unless otherwise specified device type v dd group a subgroup s limits 2 /unit min max high level output voltage v oh for all inputs affecting output under test, v = v or v in dd ss i = -12.0 ma oh all 4.5 v 1, 2, 3 3.15 v m, d, l, r, f, g, h 3 /all 1 3.15 low level output voltage v ol for all inputs affecting output under test, v = v or v in dd ss i = 12.0 ma ol all 4.5 v 1, 2, 3 0.4 v m, d, l, r, f, g, h 3 /all 1 0.4 high level input voltage v ih all 4.5 v 1, 2, 3 2.25 v m, d, l, r, f, g, h 3 /all 1 2.25 all 5.5 v 1, 2, 3 2.75 m, d, l, r, g, g, h 3 /all 1 2.75 low level input voltage v il all 4.5 v 1, 2, 3 0.8 v m, d, l, r, f, g, h 3 /all 1 0.8 all 5.5 v 1, 2, 3 0.8 m, d, l, r, f, g, h 3 /all 1 0.8 input current high i ih for input under test, v = 5.5 v for in all other inputs v = v or v in dd ss all 5.5 v 1, 2, 3 +1.0 a m, d, l, r, f, g, h 3 /all 1 +1.0 input current low i il for input under test, v = v in ss for all other inputs v = v or v in dd ss all 5.5 v 1, 2, 3 -1.0 a m, d, l, r, f, g, h 3 /all 1 -1.0 quiescent supply current delta, ttl input levels i dd 4 / for input under test v = v -2.1 v in dd for all other inputs v = v or v in dd ss all 5.5 v 1, 2, 3 1.6 ma m, d, l, r, f, g, h 3 /all 1 1.6 quiescent supply current i ddq v = v or v in dd ss all 5.5 v 1, 2, 3 10.0 a m, d, l, r, f, g, h 3 / all 1 10.0 short circuit output current i os 5 / 6 / v = v and v out dd ss all 5.5 v 1, 2, 3 300 ma see footnotes at end of table.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 7 desc form 193a jul 94 table ia. electrical performance characteristics - continued. test symbol test conditions 1 / -55 ( c t +125 ( c c unless otherwise specified device type v dd group a subgroup s limits 2 /unit min max three-state output leakage current high i ozh m g = 5.5 v for all other inputs v = v or v in dd ss v = v out dd all 5.5 v 1, 2, 3 +30.0 a m, d, l, r, f, g, h 3 / all 1 +30.0 three-state output leakage current low i ozl m g = 5.5 v for all other inputs v = v or v in dd ss v = v out ss all 5.5 v 1, 2, 3 -30.0 a m, d, l, r, f, g, h 3 / all 1 -30.0 input capacitance c in f = 1mhz, see 4.4.1c all 0.0 v 4 15 pf output capacitance c out f = 1mhz, see 4.4.1c all 0.0 v 4 15 pf power dissipation p sw 7 / c = 50 pf, per switching output l all 4.5 v and 5.5 v 4, 5, 6 2.0 mw/ mhz functional test 8 / v = 0.5 v , v = 0.8 v ih dd il see 4.4.1 b all 4.5 v and 5.5 v 7, 8 l h m, d, l, r, f, g, h 3 /all 7 l h propagation delay time, man to myn t plh 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 1.0 11.0 ns m, d, l, r, f, g, h 3 / all 9 1.0 11.0 t phl 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 1.0 11.0 m, d, l, r, f, g, h 3 / all 9 1.0 11.0 propagation delay time, output enable, m g to myn t pzh 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 2.0 12.0 ns m, d, l, r, f, g, h 3 / all 9 2.0 12.0 t pzl 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 2.0 12.0 m, d, l, r, f, g, h 3 / all 9 2.0 12.0 propagation delay time, output disable, m g to myn t phz 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 2.0 12.0 ns m, d, l, r, f, g, h 3 / all 9 2.0 12.0 t plz 9 / c = 50 pf, see figure 4 l all 4.5 v and 5.5 v 9, 10, 11 2.0 12.0 m, d, l, r, f, g, h 3 / all 9 2.0 12.0 1 / each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in table ia herein. output terminals not designated shall be high level logic, low level logic, or open, except for the i and i tests, ddq dd the output terminals shall be open. when performing the i and i tests, the current meter shall be placed in the circuit ddq dd such that all current flows through the meter. 2 / for negative and positive voltage and current values, the sign designates the potential difference in reference to v and the ss direction of current flow respectively; and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 8 desc form 193a jul 94 table ia. electrical performance characteristics - continued. 3 / devices supplied to this drawing meet all levels m, d, l, r, f, g, and h of irradiation. however, these devices are only tested at the "h" level. pre and post irradiation values are identical unless otherwise specified in table ia. when performing post irradiation electrical measurements for any rha level, t = +25 ( c. a 4 / this test may be performed either one input at a time (preferred method) or with all input pins simultaneously at v = v - 2.1 in dd v (alternate method). classes q and v shall use the preferred method. when the test is performed using the alternate test method, the maximum limit is equal to the number of inputs at a high ttl input level times 1.6 ma; and the preferred method and limits are guaranteed. for the preferred method, a minimum of one input shall be tested. all other inputs shall be guaranteed, if not tested, to the limits specified in table ia, herein. 5 / this parameter is supplied as design limit but not guaranteed or tested. 6 / no more than one output should be shorted at a time for a maximum duration of one second. 7 / this value is calculated during the design/qualification process and is supplied as a design limit but is not tested. total power consumption is determined by both idle/standby power consumption (ps) and "at frequency" power consumption (pf). to determine standby power consumption use the formula: p = (n x p x f) + (loads x prdy x i x v ) tsw olol where n is the number of switching outputs; f is the frequency of the device; loads is the resistive power component, typically a ttl load; and prdy is the percent duty cycle that the output is sinking current. 8 / the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. for v out measurements, l 0.5 v and h 4.0 v and are tested at v = 4.5 v and v = 5.5 v. ss ss 9 / for propagation delay tests, all paths must be tested. table ib. sep test limits . 1 / 2 / device type t = a temperature 10 ( c 3 / v = 4.5 v dd bias for latch-up test v = 5.5 v dd no latch-up let = 3 / effective let no upsets [mev/(mg/cm )] 2 maximum device cross section 01 +25 ( clet 80 6 x 10 cm /bit -9 2 80 1 / for sep test conditions, see 4.4.4.4 herein. 2 / technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. test plan must be approved by trb and quaifying activity. 3 / worst case temeprature is t +125 ( c. a
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 9 desc form 193a jul 94 device type all case outlines r and x terminal number terminal symbol terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 1 g 1a1 2y4 1a2 2y3 1a3 2y2 1a4 2y1 v ss 11 12 13 14 15 16 17 18 19 20 2a1 1y4 2a2 1y3 2a3 1y2 2a4 1y1 2 g v dd figure 1. terminal connections . inputs outputs m gman myn l l h l h x l h z h = high voltage level l = low voltage level x = don't care z = high impedance figure 2. truth table .
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 10 desc form 193a jul 94 figure 3. logic diagram .
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 11 desc form 193a jul 94 notes: 1 / v = 1.4 v. ref 2 / c = 50 pf minimum or equivalent (includes test jig and probe capacitance). l 3 / i is set to -1.0 ma and i is set to 1.0 ma for t , t , t , and t measurements. i is set to -12.0 ma and src snk phl plh pzl pzh src i is set to 12.0 ma for t and t measurements. snk plz phz 4 / input signal from pulse generator: v = 0.0 v to v ; f 10 mhz; t = 1.0 v/ns 0.3 v/ns; t = 1.0 v/ns 0.3 v/ns; t and t in dd r f r f shall be measured from 0.1 v to 0.9 v and from 0.9 v to 0.1 v , respectively. dd dd dd dd figure 4. switching waveforms and test circuit .
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 12 desc form 193a jul 94 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the truth table in figure 2 herein. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device. c. c and c shall be measured only for initial qualification and after process or design changes which may affect in out capacitance. c shall be measured between the designated terminal and v at a frequency of 1 mhz. for c and in ss in c , test all applicable pins on five devices with zero failures. out 4.4.2 group c inspection . the group c inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil- std-883. b. t = +125 ( c, minimum. a c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil-prf- 38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q, and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883, test method 1019 and as specified herein. 4.4.4.1.1 accelerated aging testing . accelerated aging testing shall be performed on all devices requiring a rha level greater than 5k rads (si). the post-anneal end-point electrical parameter limits shall be as specified in table ia herein and shall be the pre-irradiation end-point electrical parameter limits at 25 ( c 5 ( c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accordance with test method 1010 of mil-std-883 and as specified herein (see 1.4 herein). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may affect the rha capab ility of the process. 4.4.4.3 dose rate upset testing . dose rate upset testing shall be performed in accordance with test method 1011 of mil-std-883 and herein (see 1.4 herein). a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may affect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. transient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil-prf-38535.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 13 desc form 193a jul 94 table iia. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1, 7, 9 1, 7, 9 1, 7, 9 final electrical parameters (see 4.2) 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 1, 2, 3, 7, 8, 9, 10, 11 3 / group d end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 group e end-point electrical parameters (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1 / pda applies to subgroup 1 and 7. 2 / pda applies to subgroups 1, 7, and delta's. 3 / delta limits as specified in table iib herein shall be required where specified, and the delta values shall be completed with reference to the zero hour electrical parameters. table iib. burn-in and operating life test, delta parameters (+25 ( c) . parameters symbol delta limits output voltage low v ol 100 mv output voltage high v oh 100 mv 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v devices (see 1.4 herein). sep testing shall be performed on a technology process on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 ( to the normal, inclusive (i.e. 0 ( angle 60 ( ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 100 errors or 10 ions/cm . 62 c. the flux shall be between 10 and 10 ions/cm /s. the cross-section shall be verified to be flux independent by measuring 25 2 the cross-section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be 20 micron in silicon. e. the test temperature shall be +25 ( c for the upset measurements and the maximum rated operating temperature 10 ( c for the latchup measurements. f. bias conditions shall be defined by the manufacturer for the latchup measurements. g. test four devices with zero failures. h. for sep test limits, see table ib herein.
standard microcircuit drawing defense electronics supply center dayton, ohio 45444 size a 5962-96571 revision level sheet 14 desc form 193a jul 94 table iii. irradiation test c onnections . device type open ground v = 5.0 v 0.5 v dd 01 3, 5, 7, 9, 12, 14, 16, 18 1, 10, 11, 13, 15 17, 19 2, 4, 6, 8, 20 note: each pin except 10 and 20 will have a resistor of 2.49 k 6 5% for irradiation testing. 4.5 methods of inspection . methods of inspection shall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages given are referenced to the microcircuit v terminal. ss currents given are conventional current and positive when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's w ill be coordinated with the users of record for the individual documents. this coordination will be accomplished in accordance with mil-std- 973 using dd form 1692, engineering change proposal. 6.3 record of users . military and i ndustrial users should inform defense electronics supply center when a system application requires configuration control and which smd's are applicable to that system. desc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact desc-ec, telephone (513) 296-6047. 6.4 comments . comments on this drawing should be directed to desc-ec, dayton, ohio 45444-5270, or telephone (513) 296-5377. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf- 38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to desc-ec and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by desc-ec. 6.7 additional information . a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep).
standard microcircuit drawing source approval bulletin date: 96-03-11 approved sources of supply for smd 5962-96571 are listed below for immediate acquisition only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 w ill be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by desc-ec. this bulletin is superseded by the next dated revision of mil-hdbk- 103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962h9657101vra 65342 ut54acts244pvah 5962h9657101vxa 65342 ut54acts244uvah 5962h9657101vrc 65342 ut54acts244pvch 5962h9657101vxc 65342 ut54acts244uvch 5962h9657101qra 65342 ut54acts244pqah 5962h9657101qxa 65342 ut54acts244uqah 5962h9657101qrc 65342 ut54acts244pqch 5962h9657101qxc 65342 ut54acts244uqch 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. the device manufacturers listed herein are authorized to supply alternate lead finishes "a", "b", or "c" at their discretion. contact the listed approved source of supply for further information. 2 /caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. vendor cage vendor name number and address 65342 united technologies microelectronics center 1575 garden of gods road colorado springs, co 80907-3486 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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