IRGCH50KE pd-9.1439 IRGCH50KE igbt die in wafer form 1200 v size 5 ultra-fast speed 5" wafer norminal backmetal composition, thickness: cr-ni-ag ( 1ka-4ka-6ka ) norminal front metal composition, thickness: 99% al, 1% si (3 microns) dimensions: 0.257" x 0.260" wafer diameter: 125mm, with std. < 100 > flat wafer thickness: .015" + / -.003" relevant die mechanical dwg. number 01-5104 minimum street width 100 microns reject ink dot size 0.25mm diameter minimum ink dot location see die outline drawing below recommended storage environment: store in original container, in dessicated nitrogen, with no contamination mechanical data die outline reference standard ir packaged part ( for design ) : irgph50k target parameter description guaranteed (min/max) test conditions v ce (on) collector-to-emitter saturation voltage 3.8v max. i c = 20a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 1200v min. t j = 25c, i ces = 250a, v ge = 0v v ge(th) gate threshold voltage 3.0v min., 6.0v max. v ge = v ce , t j =25c, i c =250a i ces zero gate voltage collector current 250 a max. t j = 25c, v ce = 1200v i ges gate-to-emitter leakage current 500 na max. t j = 25c, v ge = +/- 20v electrical characteristics ( wafer form ) notes : 1. all dimensions are shown in millimeters ( inches ) 2. contro lling dimension : ( inch ) 3. letter d esignation : s = so urc e g = gate 4. dimensional tolerances bon ding pads : < 0.635 to leranc e = +/- 0.013 w idth < (.0250 ) toleranc e =+/- (.0005 ) & > 0.635 toleranc e = +/- 0.025 length > (.0250 ) toleran ce = +/- (.0010 ) overall die < 1.270 toler ance = +/- 0.102 w idth < (.050 ) tolerance = +/- (.004 ) & > 0.635 toleran ce = +/- 0.203 length > (.050 ) toleranc e = +/- (.008 ) 5. unless otherwise noted all die are gen iii in k dot location emitter g 3.01 (.119 ) 6.60 (.260 ) 1.78 (.070 ) 0.56 (.022 ) 0.58 (.023 ) 6.53 (.257 ) e c g
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