? 1998 mos field effect transistor np24n10clb, np24n10dlb, NP24N10ELB switching n-channel power mos fet data sheet document no. d13465ej1v0ds00 (1st edition) date published december 2001 ns cp(k) printed in japan the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. description these products are n-channel mos field effect transistor designed for high current switching applications. features ? channel temperature 175 degree rated ? super low on-state resistance r ds(on)1 = 80 m ? max. (v gs = 10 v, i d = 12 a) r ds(on)2 = 93 m ? max. (v gs = 5.0 v, i d = 10 a) ? low c iss : c iss = 1300 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 100 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 24 a drain current (pulse) note1 i d(pulse) 80 a total power dissipation (t a = 25c) p t 1.8 w total power dissipation (t c = 25c) p t 100 w single avalanche current note2 i as 24 / 7 a single avalanche energy note2 e as 57 / 245 mj repetitive avalanche current note3 i ar 20 a repetitive avalanche energy note3 e ar 10 mj channel temperature t ch 175 c storage temperature t stg ?55 to +175 c notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 50 v, r g = 25 ? , v gs = 20 0 v 3. t ch 175c, r g = 25 ? , v gs = 20 0 v, duty cycle 3% thermal resistance channel to case thermal resistance r th(ch-c) 1.50 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w ordering information part number package np24n10clb to-220ab np24n10dlb to-262 NP24N10ELB to-263 (to-220ab) (to-262) (to-263)
data sheet d13465ej1v0ds 2 np24n10clb, np24n10dlb, NP24N10ELB electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds =10 v, i d = 1 ma 1.0 1.5 2.0 v forward transfer admittance | y fs |v ds = 10 v, i d = 10 a 12 22 s r ds(on)1 v gs = 10 v, i d = 12 a 55 80 m ? r ds(on)2 v gs = 5.0 v, i d = 10 a 61 93 m ? drain to source on-state resistance r ds(on)3 v gs = 4.0 v, i d = 10 a 65 100 m ? input capacitance c iss 1300 3100 pf output capacitance c oss 460 700 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 150 300 pf turn-on delay time t d(on) 22 50 ns rise time t r 110 280 ns turn-off delay time t d(off) 140 280 ns fall time t f v dd = 50 v, i d = 10 a v gs = 10 v r g = 10 ? 120 280 ns total gate charge q g 51 80 nc gate to source charge q gs 4.9 nc gate to drain charge q gd v dd = 80 v v gs = 10 v i d = 20 a 15 nc body diode forward voltage v f(s-d) i f = 20 a, v gs = 0 v 1.1 v reverse recovery time t rr 170 ns reverse recovery charge q rr i f = 20 a, v gs = 0 v di/dt = 100 a/ s 770 nc test circuit 1 avalanche capability r g = 25 ? 50 ? pg. l v dd v gs = 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form i d wave form v gs 10% 90% v gs 10% 0 i d 90% 90% t d(on) t r t d(off) t f 10% i d 0 t on t off pg. 50 ? d.u.t. r l v dd i g = 2 ma
data sheet d13465ej1v0ds 3 np24n10clb, np24n10dlb, NP24N10ELB typical characteristics (t a = 25c) total power dissipation vs. case temperature t c - case temperature - ?c p t - total power dissipation - w 0 0 25 50 75 100 125 150 175 200 140 120 100 80 60 40 20 derating factor of forward bias safe operating area dt - percentage of rated power - % 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 single avalanche energy derating factor starting t ch - starting channel temperature - ?c single pulse avalanche energy - mj 0 25 50 75 100 125 150 175 50 100 150 200 250 300 350 t c - case temperature - ?c 24 a transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c /w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 10 100 r th(ch-c) = 1.50 ?c /w t c = 25 ?c single pulse i as = 7 a forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 1000 t c = 25?c single pulse r d s (o n ) limited (v g s = 10 v) i d(pulse) = 80 a power dissipation limited(p t = 100 w) 1 ms 10 ms 1 0 0 s p w = 10 s dc i d(dc) = 24 a 245 mj 57 mj
data sheet d13465ej1v0ds 4 np24n10clb, np24n10dlb, NP24N10ELB drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0 0 10 20 30 40 50 4 6 8 2 pulsed v gs = 6 v v gs = 4 v v gs = 10 v forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a 1 10 100 0 510 15 1000 forward transfer admittance vs. drain current i d - drain current - a |y fs | - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m ? 0 10 drain to source on-state resistance vs. drain current gate to source cutoff voltage vs. channel temperature t ch - channel temperature - ? c v gs(off) - gate to source cutoff voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - m ? 40 1 v ds = 10 v pulsed 0.1 1 10 100 1000 10 100 20 40 60 80 100 120 140 20 30 pulsed 80 10 100 pulsed 0 1.0 v ds = 10 v i d = 1 ma 50 0 50 100 150 0 1 2.0 120 v gs = 4 v v gs = 10 v t ch = 25 ? c 25 ? c 75 ? c 125 ? c 160 i d = 8.0 a 1.5 0.5 pulsed v ds = 10 v t a = 25 ? c 25 ? c 125 ? c
data sheet d13465ej1v0ds 5 np24n10clb, np24n10dlb, NP24N10ELB drain to source on-state resistance vs. channel temperature t ch - channel temperature - ? c r ds(on) - drain to source on-state resistance - m ? source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1.0 0.1 0 50 40 0 50 100 150 i d = 10 a 0.1 0 1 10 100 1000 0.5 pulsed 10 1 100 1000 10000 10 100 1000 v gs = 0 f = 1 mhz 10 100 1000 1.0 10 100 reverse recovery time vs. drain current i f - diode current - a t rr - reverse recovery time - ns 10 0.1 100 1000 1.0 10 100 1.0 1.5 v dd = 50 v v gs = 10 v r g = 10 ? dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 20 40 60 80 20 40 60 80 2 4 6 8 10 12 14 16 0 160 120 80 v gs = 0 i d = 20 a 10000 di/dt = 100 a/ s v gs = 0 v gs - gate to source voltage - v t a = 25 ? c v gs = 10 v v gs = 4 v v gs = 10 v c iss c oss c rss t d(off) t f t r t d(on) v ds v gs v dd = 80 v
data sheet d13465ej1v0ds 6 np24n10clb, np24n10dlb, NP24N10ELB package drawings (unit: mm) 1) to-220ab (mp-25) 2) to-262 (mp-25 fin cut) 3) to-263 (mp-25zj) equivalent circuit source body diode gate protection diode gate drain 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.60.2 4 3.00.3 1.30.2 0.750.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.30.2 0.50.2 2.80.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.30.2 0.750.3 2.54 typ. 2.54 typ. 8.50.2 12.7 min. 1.30.2 0.50.2 2.80.2 1.00.5 4 1.40.2 1.00.5 2.54 typ. 2.54 typ. 8.50.2 123 5.70.4 4 4.8 max. 1.30.2 0.50.2 1.gate 2.drain 3.source 4.fin (drain) 0.70.2 10 typ. 0.5r typ. 0.8r typ. 2.80.2 remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
data sheet d13465ej1v0ds 7 np24n10clb, np24n10dlb, NP24N10ELB [memo]
np24n10clb, np24n10dlb, NP24N10ELB m8e 00. 4 the information in this document is current as of december, 2001. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product before using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
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