bd646, bd648, BD650, bd652 pnp silicon power darlingtons
1 may 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bd645, bd647, bd649 and bd651 62.5 w at 25c case temperature 8 a continuous collector current minimum h fe of 750 at 3 v, 3 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.4 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, i b(on) = -5 ma, r be = 100 ? , v be(off) = 0, r s = 0.1 ? , v cc = -20 v. rating symbol value unit collector-base voltage (i e = 0) bd646 bd648 BD650 bd652 v cbo -80 -100 -120 -140 v collector-emitter voltage (i b = 0) bd646 bd648 BD650 bd652 v ceo -60 -80 -100 -120 v emitter-base voltage v ebo -5 v continuous collector current i c -8 a peak collector current (see note 1) i cm -12 a continuous base current i b -0.3 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 62.5 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w unclamped inductive load energy (see note 4) ?li c 2 50 mj operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 4 .com u datasheet
bd646, bd648, BD650, bd652 pnp silicon power darlingtons 2
may 1993 - revised september 2002 specifications are subject to change without notice. notes: 5. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma i b = 0 (see note 5) bd646 bd648 BD650 bd652 -60 -80 -100 -120 v i ceo collector-emitter cut-off current v ce = -30 v v ce = -40 v v ce = -50 v v ce = -60 v i b =0 i b =0 i b =0 i b =0 bd646 bd648 BD650 bd652 -0.5 -0.5 -0.5 -0.5 ma i cbo collector cut-off current v cb = -60 v v cb = -80 v v cb = -100 v v cb = -120 v v cb = -40 v v cb = -50 v v cb = -60 v v cb = -70 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c bd646 bd648 BD650 bd652 bd646 bd648 BD650 bd652 -0.2 -0.2 -0.2 -0.2 -2.0 -2.0 -2.0 -2.0 ma i ebo emitter cut-off current v eb = -5 v i c = 0 (see notes 5 and 6) -5 ma h fe forward current transfer ratio v ce = -3 v i c = -3 a (see notes 5 and 6) 750 v ce(sat) collector-emitter saturation voltage i b = -12 ma i b = -50 ma i c = -3a i c = -5a (see notes 5 and 6) -2 -2.5 v v be(sat) base-emitter saturation voltage i b = -50 ma i c = -5 a (see notes 5 and 6) -3 v v be(on) base-emitter voltage v ce = -3 v i c = -3 a (see notes 5 and 6) -2.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 2.0 c/w r ja junction to free air thermal resistance 62.5 c/w 4 .com u datasheet
bd646, bd648, BD650, bd652 pnp silicon power darlingtons 3
may 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -10 -10 h fe - typical dc current gain 50000 100 1000 10000 tcs135ad t c = -40c t c = 25c t c = 100c v ce = -3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 tcs135ab t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -15 -10 -05 tcs135ac t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2% 4 .com u datasheet
bd646, bd648, BD650, bd652 pnp silicon power darlingtons 4
may 1993 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -0.01 -01 -10 -10 sas135ac bd646 bd648 BD650 bd652 maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ac 4 .com u datasheet
bd646, bd648, BD650, bd652 pnp silicon power darlingtons 5
may 1993 - revised september 2002 specifications are subject to change without notice. to-220 3-pin plastic flange-mount package this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound w ill withstand soldering te mperature with no defor mation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or proces sing when used in soldered assembly. mechanical data to220 all linear dimensions in millimeters ? 1,23 1,32 4,20 4,70 123 0,97 0,61 see note c see note b 10,0 10,4 2,54 2,95 6,0 6,6 14,55 15,90 12,7 14,1 3,5 6,1 1,07 1,70 2,34 2,74 4,88 5,28 3,71 3,96 0,41 0,64 2,40 2,90 version 2 version 1 notes: a. the centre pin is in electr ical contact with the mounting tab. b. mounting tab corner profile according to package version. c. typical fixing hole centre stand off height according to package version. version 1, 18.0 mm. version 2, 17.6 mm. mdxxbe 4 .com u datasheet
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