bdp 947, bdp 949 1 oct-22-1999 silicon npn transistor for af driver and output stages high collector current high current gain low collector-emitter saturation voltage complementary types: bdp 948, bdp 950 (pnp) vps05163 1 2 3 4 type marking pin configuration package bdp 947 bdp 949 bdp 947 bdp 949 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings parameter bdp 947 symbol bdp 949 unit v 60 collector-emitter voltage v ceo 45 collector-base voltage 45 60 v cbo v ebo 5 5 emitter-base voltage 3 a dc collector current i c peak collector current 5 i cm base current i b 200 ma peak base current i bm 500 total power dissipation , t s = 99 c w 3 p tot c junction temperature 150 t j storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 72 k/w junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bdp 947, bdp 949 2 oct-22-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit typ. max. min. dc characteristics v v (br)ceo 45 60 - - bdp 947 bdp 949 collector-emitter breakdown voltage i c = 10 ma, i b = 0 - - - - bdp 947 bdp 949 - - 45 60 v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 - - v (br)ebo 5 emitter-base breakdown voltage i e = 10 a, i c = 0 - - i cbo collector cutoff current v cb = 45 v, i e = 0 100 na i cbo - collector cutoff current v cb = 45 v, i e = 0 , t a = 150 c 20 - a i ebo - emitter cutoff current v eb = 4 v, i c = 0 - 100 na dc current gain 1) i c = 10 ma, v ce = 5 v i c = 500 ma, v ce = 1 v i c = 2 a, v ce = 2 v 25 85 50 - - - h fe - 475 - - v collector-emitter saturation voltage1) i c = 2 a, i b = 0.2 a - - v cesat 0.5 base-emitter saturation voltage 1) i c = 2 a, i b = 0.2 a 1.3 v besat - - ac characteristics transition frequency i c = 50 ma, v ce = 10 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 25 - pf 1) pulse test: t = 300 s, d = 2%
bdp 947, bdp 949 3 oct-22-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 w 3.2 p tot t s t a permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -2 10 -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 dc current gain h fe = f ( i c ) v ce = 2v 10 0 10 1 10 2 10 3 10 4 ma i c 0 10 1 10 2 10 3 10 - h fe -55c 25c 100c permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bdp 947, bdp 949 4 oct-22-1999 collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0.0 0.1 0.2 0.3 0.4 v 0.6 v cesat 0 10 1 10 2 10 3 10 4 10 ma i c 100c 25c -50c collector cutoff current i cbo = f ( t a ) v cb = 45v 0 20 40 60 80 100 120 c 150 t a -1 10 0 10 1 10 2 10 3 10 4 10 5 10 na i cbo max typ base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v besat 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c collector current i c = f ( v be ) v ce = 2v 0.0 0.2 0.4 0.6 0.8 1.0 v 1.3 v be 0 10 1 10 2 10 3 10 4 10 ma i c -50c 25c 100c
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