2sc1213a(k) silicon npn epitaxial ade-208-1049 (z) 1st. edition mar. 2001 application low frequency amplifier medium speed switching outline 1. emitter 2. collector 3. base to-92 (1) 3 2 1
2sc1213a (k) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 4v collector current i c 500 ma collector power dissipation p c 400 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 50 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 50 v i c = 1.0 ma, r be = emitter to base breakdown voltage v (br)ebo 4vi e = 10 m a, i c = 0 collector cutoff current i cbo 0.5 m av cb = 20 v, i e = 0 dc current transfer ratio h fe * 1 60 320 v ce = 3 v, i c = 10 ma h fe 10 v ce = 3 v, i c = 500 ma* 2 base to emitter voltage v be 0.64 v v ce = 3 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 0.12 0.6 v i c = 150 ma, i b = 15 ma* 2 base to emitter satruation voltage v be(sat) 0.83 1.2 v i c = 150 ma, i b = 15 ma* 2 collector output capacitance cob 7.0 pf v cb = 10 v, i e = 0, f = 1 mhz gain bandwidth product f t 120 mhz v ce = 3 v, i c = 10 ma turn on time t on 0.25 m sv cc = 10.3 v i c = 10 i b1 = ?0 i b2 = 10 ma turn off time t off 0.85 m s storage time t stg 0.4 m sv cc = 5 v i c = i b1 = ? b2 = 20 ma notes: 1. the 2sc1213a(k) is grouped by h fe as follows. 2. pulse test bcd 60 to 120 100 to 200 160 to 320
2sc1213a (k) 3 switching time test circuit t on , t off test circuit 50 50 0.002 ? v 6 k 1 k 10.3 v 6 k d.u.t. crt p.g. t r , t f 15 ns pw 3 5 m s duty ratio 10% ? 50 0.002 ? unit r : w c : m f switching time test circuit t stg test circuit 200 50 0.002 7 v 100 240 5 v 1.0 215 d.u.t. crt p.g. t r 5 ns pw 3 5 m s duty ratio 2% + 50 0.002 ? unit r : w c : f 0 0 13 v 10% 90% 10% response waveform 90% 90% input output t on t d t off 0 0 9 v 10% 10% input output t stg response waveform 0 200 100 400 300 500 50 ambient temperature ta ( c) collector power dissipation p c (mw) maximum collector dissipation curve 100 150 0 100 200 300 500 400 12 collector to emitter voltage v ce (v) collector current i c (ma) typical output characteristics (1) 345 1 ma 2 3 4 5 6 10 30 40 8 i b = 0 p c = 400 mw 20
2sc1213a (k) 4 0 20 40 60 100 80 10 20 collector to emitter voltage v ce (v) collector current i c (ma) typical output characteristics (2) 30 40 50 0.1 ma 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 i b = 0 p c = 400 mw 0 1.0 0.3 3 30 10 0.2 0.4 base to emitter voltage v be (v) collector current i c (ma) typical transfer characteristics 0.6 0.8 1.2 1.0 25 ?5 ta = 75 c v ce = 3 v 0.03 0.1 0.3 1.0 3 10 100 30 10 020 collector to base voltage v cb (v) collector current i cbo (na) collector cutoff current vs. collector to base voltage 30 40 50 100 75 50 ta = 25 c 0 20 40 60 80 140 120 100 2 5 10 20 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 50 100 200 500 ta = ?5 c 0 25 50 75 v ce = 3 v
2sc1213a (k) 5 0.1 0 0.04 0.12 0.08 0.20 0.16 0.32 0.28 0.24 0.3 1.0 3 collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) collector to emitter saturation voltage vs. collector current 10 30 100 300 1,000 i c = 10 i b 0.4 0.5 0.6 0.7 0.8 1.1 1.0 0.9 0.1 0.2 0.5 1.0 2 5 collector current i c (ma) base to emitter saturation voltage v be(sat) (v) base to emitter saturation voltage vs. collector current 10 20 50 100 200 500 ta = 75 c 50 25 0 ?5 i c = 10 i b pulse 0.1 0 20 10 40 30 70 60 50 0.3 1.0 3 collector to base voltage v cb (v) emitter to base voltage v eb (v) collector output capacitance c ob (pf) emitter input capacitance c ib (pf) input and output capacitance vs. voltage 10 30 c ib (i c = 0) c ob (i e = 0) f = 1 mhz 2 0 80 40 160 120 280 240 200 51020 collector current i c (ma) gain bandwidth product f t (mhz) gain bandwidth product vs. collector current 50 100 200 500 v ce = 3 v
2sc1213a (k) 6 5 10 20 50 200 100 1,000 500 10 20 collector current i c (ma) switching time t (ns) switching time vs. collector current 50 100 200 500 v cc = 10.3 v i c = 10 i b1 = ?0 i b2 t off t stg t on t d
2sc1213a (k) 7 package dimensions 0.60 max 0.55max 4.8 0.4 3.8 0.4 5.0 0.2 0.7 2.3 max 12.7 min 0.5max 1.27 2.54 hitachi code jedec eiaj mass (reference value) to-92 (1) conforms conforms 0.25 g as of january, 2001 unit: mm
2sc1213a (k) 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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