? semiconductor components industries, llc, 2011 june, 2011 ? rev. 2 1 publication order number: mjb5742/d MJB5742T4G npn silicon power darlington transistors the darlington transistors are designed for high ? voltage power switching in inductive circuits. features ? these devices are pb ? free and are rohs compliant applications ? small engine ignition ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls maximum ratings rating symbol value unit collector ? emitter voltage v ceo(sus) 400 vdc collector ? emitter voltage v cev 800 vdc emitter ? base voltage v eb 8 vdc collector current ? continuous ? peak (note 1) i c i cm 8 16 adc base current ? continuous ? peak (note 1) i b i bm 2.5 5 adc total device dissipation @ t a = 25 c derate above 25 c p d 2 0.016 w w/ c total device dissipation @ t c = 25 c derate above 25 c p d 100 0.8 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c thermal characteristics characteristics symbol max unit thermal resistance, junction ? to ? case r jc 1.25 c/w thermal resistance, junction ? to ? ambient r ja 62.5 c/w maximum lead temperature for soldering purposes 1/8 from case for 5 seconds t l 275 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5 ms, duty cycle 10%. power darlington transistors 8 amperes, 400 volts 100 watts http://onsemi.com 100 50 marking diagram collector 2,4 base 1 emitter 3 b5742g ayww b5742 = specific device code a = assembly location y = year ww = work week g = pb ? free package d 2 pak case 418b style 1 device package shipping ? ordering information MJB5742T4G d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d.
MJB5742T4G http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ???????????????????? ???????????????????? characteristic ???? ???? ???? ???? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? (note 2) ???????????????????? ???????????????????? ? emitter sustaining voltage (i c = 50 ma, i b = 0) ???? ???? ???? ???? ??? ??? ? ???? ???? ??? ??? vdc ???????????????????? ???????????????????? ???????????????????? c) ???? ???? ???? ???? ???? ???? ? ? ??? ??? ??? ???? ???? ???? 1 5 ??? ??? ??? ???????????????????? ???????????????????? ???? ???? ???? ???? ? ??? ??? ???? ???? 75 ??? ??? ????????????????????????????????? second breakdown ???????????????????? ???????????????????? second breakdown collector current with base forward biased ???? ???? ??????????? ??????????? ???????????????????? ???????????????????? ???? ???? ??????????? ??????????? ????????????????????????????????? ????????????????????????????????? on characteristics (note 2) ???????????????????? ???????????????????? ???????????????????? ???? ???? ???? ???? ???? ???? ??? ??? ??? ???? ???? ???? ? ? ??? ??? ??? ???????????????????? ???????????????????? ???????????????????? collector ? emitter saturation voltage (i c = 4 adc, i b = 0.2 adc) collector ? emitter saturation voltage (i c = 8 adc, i b = 0.4 adc) collector ? emitter saturation voltage (i c = 4 adc, i b = 0.2 adc, t c = 100 c) ???? ???? ???? ???? ???? ???? ? ? ? ??? ??? ??? ???? ???? ???? 2 3 2.2 ??? ??? ??? ???????????????????? ???????????????????? ???????????????????? ???????????????????? ? emitter saturation voltage (i c = 4 adc, i b = 0.2 adc) base ? emitter saturation voltage (i c = 8 adc, i b = 0.4 adc) base ? emitter saturation voltage (i c = 4 adc, i b = 0.2 adc, t c = 100 c) ???? ???? ???? ???? ???? ???? ???? ???? ? ? ? ??? ??? ??? ??? ???? ???? ???? ???? 2.5 3.5 2.4 ??? ??? ??? ??? ???????????????????? ???????????????????? ???? ???? ???? ???? ? ??? ??? ???? ???? 2.5 ??? ??? ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? (table 1) ???????? ???????? ????????????? ????????????? ????????????? ????????????? ????????????? s, duty cycle 1%) ???? ???? ???? ???? ? ??? ??? 0.04 ???? ???? ? ??? ??? s ???????? ???????? ???? ???? ???? ???? ? ??? ??? 0.5 ???? ???? ? ??? ??? s ???????? ???????? ???? ???? ???? ???? ? ??? ??? 8 ???? ???? ? ??? ??? s ???????? ???????? ???? ???? ???? ???? ? ??? ??? 2 ???? ???? ? ??? ??? s ????????????????????????????????? ????????????????????????????????? inductive load, clamped (table 1) ???????? ???????? ????????????? ????????????? ????????????? ???? ???? ???? ???? ? ??? ??? 4 ???? ???? ? ??? ??? s ???????? ???????? ???? ???? ???? ???? ? ??? ??? 2 ???? ???? ? ??? ??? s 2. pulse test: pulse width 300 s, duty cycle = 2%. 3. the internal collector ? to ? emitter diode can eliminate the need for an external diode to clamp inductive loads. tests have shown that the forward recovery voltage (v f ) of this diode is comparable to that of typical fast recovery rectifiers.
MJB5742T4G http://onsemi.com 3 v be , base-emitter voltage (volts) t rv i c v ce 90% i b1 t sv i c(pk) v ce(pk) 90% v ce(pk) 90% i c 10% v ce(pk) 10% i c(pk) 2% i c i b t fi t ti t c 0.1 i c , collector current (amps) 5 2000 h fe , dc current gain v ce = 5 v 1 +25 c 210 1000 100 10 0 t c , case temperature ( c) 0 40 120 160 60 power derating factor (%) second breakdown derating 100 80 40 20 60 100 140 80 thermal derating figure 1. power derating figure 2. inductive switching measurements i c , collector current (amps) 2.4 1.6 0.4 figure 3. dc current gain figure 4. base ? emitter voltage 2 1.2 0.8 h fe = 20 0.2 10 2 0.5 1 5 time 150 c -55 c 20 2.2 1.4 1.8 1 0.6 +150 c +25 c -55 c typical characteristics v ce , collector-emitter voltage (volts) figure 5. collector ? emitter saturation voltage i c , collector current (amps) 1 0.2 0.1 1.4 0.8 1.2 10 5 2 1 0.5 0.2 1.6 1.8 0.6 0.4 h fe = 20 +25 c -55 c +150 c
MJB5742T4G http://onsemi.com 4 reverse bias safe operating area and inductive switching resistive switching output waveforms test circuits circuit values test waveforms note: pw and v cc adjusted for desired i c r b adjusted for desired i b1 p w duty cycle 10% t r , t f 10 ns 68 1 k 0.001 f 0.02 f 1n493 3 270 +5 v 1 k 2n2905 47 1/2 w 100 -v be(off) mje20 0 t.u.t. i b r b 1n493 3 1n493 3 33 33 2n222 2 1 k mje21 0 v cc +5 v l i c mr826 * v clamp *selected for 1 kv v ce 5.1 k 51 +v cc r c scope -4 v d 1 r b tut coil data: ferroxcube core #6656 full bobbin (~16 turns) #16 gap for 200 h/20 a l coil = 200 h v cc = 30 v v ce(pk) = 250 vdc i c(pk) = 6 a v cc = 250 v d1 = 1n5820 or equiv. i c v ce i c(pk) t 1 t f t t t 2 tim e v ce or v clamp t f clamped t 1 adjusted to obtain i c t 1 l coil (i c pk ) v cc t 2 l coil (i c pk ) v clamp test equipment scope-tektronics 475 or equivalent +10 v 25 s 0 - 9.2 v t r , t f < 10 ns duty cycle = 1% r b and r c adjusted for desired i b and i c table 1. test conditions for dynamic performance
MJB5742T4G http://onsemi.com 5 safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 6 may be found at any case temperature by using the appropriate curve on figure 1. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn ? off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage ? current condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 7 gives the complete rbsoa characteristics. the safe operating area figures shown in figures 6 and 7 are specified ratings for these devices under the test conditions show n. i c , collector current (amps) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) figure 6. forward bias safe operating area figure 7. reverse bias safe operating area 16 14 12 8 0 2 4 10 100 200 300 500 0 400 16 5 10 8 1 0.02 100 i c , collector current (amps) 0.1 10 20 200 400 3 0.5 50 0.3 0.05 dc 1ms 100 s mjb5742 v be(off) 5 v t j = 100 c 6 curves apply below rated v ceo 10 s 5ms bonding wire limit thermal limit (single pulse) second breakdown limit t, time (s) t, time (s) i c , collector current (amps) 0.5 0.7 1 2 10 7 5 2 1 0.7 0.2 0.3 5 0.5 10 3 3 0.3 0.2 7 i c , collector current (amps) 0.5 0.7 1 2 10 0.7 0.5 0.2 0.1 0.07 0.02 0.3 figure 8. turn ? on time 5 0.05 1 figure 9. turn ? off time 3 v cc = 250 v i b1 = i b2 i c /i b = 20 t s t r t f t d v cc = 250 v i b1 = i b2 i c /i b = 20 0.3 0.03 0.2 7 resistive switching performance
MJB5742T4G http://onsemi.com 6 package dimensions style 1: pin 1. base 2. collector 3. emitter 4. collector seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
MJB5742T4G http://onsemi.com 7 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mjb5742/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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