semiconductor group 139 silicon schottky diodes bas 70 l general-purpose diodes for high-speed switching l circuit protection l voltage clamping l high-level detecting and mixing available with cecc quality assessment 1 2 3 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type ordering code (tape and reel) marking package 1) pin configuration bas 70 q62702-a118 73s sot-23 bas 70-04 q62702-a730 74s bas 70-05 q62702-a711 75s bas 70-06 q62702-a774 76s 1) for detailed information see chapter package outlines. 5.91
semiconductor group 140 bas 70 l general-purpose diodes for high-speed switching l circuit protection l voltage clamping l high-level detecting and mixing available with cecc quality assessment 1 2 3 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! maximum ratings per diode type ordering code (tape and reel) marking package 1) pin configuration sot-143 bas 70-07 q62702-a846 77s thermal resistance junction - ambient 3) bas 70 bas 70-04 r th ja 405 575 k/w junction - soldering point bas 70 bas 70-04 r th js 335 435 parameter symbol values unit reverse voltage v r 70 v forward current i f 70 ma junction temperature t j 150 ?c storage temperature range t stg C 55 + 150 total power dissipation bas 70 t s 66 ?c 2) bas 70-04 t s 40 ?c 2) p tot 250 mw operating temperature range t op C 55 + 150 surge forward current, t 10 ms i fsm 100 1) for detailed information see chapter package outlines. 2) max. 450 mw per package. 3) package mounted on epoxy pcb 40 mm 40 mm 1.5 mm/6 cm 2 cu.
semiconductor group 141 bas 70 electrical characteristics per diode at t a = 25 ?c, unless otherwise specified. unit values parameter symbol min. typ. max. v breakdown voltage i r = 10 m a v (br) 70 C C m a reverse current v r = 50 v v r = 70 v i r C C C C 0.1 10 mv forward voltage i f = 1 ma i f = 10 ma i f = 15 ma v f C C C 380 690 780 410 750 1000 w differential forward resistance i f = 10 ma, f = 10 khz r f C30C pf diode capacitance v r = 0, f = 1 mhz c t C 1.6 2 ps charge carrier life time i f = 25 ma t C C 100 dc characteristics
semiconductor group 142 bas 70 forward current i f = f ( v f ) diode capacitance c t = f ( v r ) f = 1 mhz characteristics per diode at t j = 25 ?c, unless otherwise specified. reverse current i r = f ( v r ) differential forward resistance r f = f ( i f ) f = 10 khz
semiconductor group 143 bas 70 forward current i f = f ( t a *; t s ) * package mounted on epoxy
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