vorl?ufige daten preliminary data t c =75c i c,nom. 15 a t c = 25 c i c 20 a min. typ. max. - 1,95 2,55 v - 2,20 - v date of publication: 2002-12-17 revision: 2.0 gate threshold voltage rckwirkungskapazit?t reverse transfer capacitance v ce = v ge , t vj = 25c, i c = eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v nf - 0,06 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - c res v ce = v ge = -15v...+15v q g - gate charge gateladung prepared by: p. kanschat kollektor emitter reststrom approved: m. hierholzer collector emitter cut off current v, v ge = 0v, t vj = 25c 600 v ce = 0v, v ge = 20v, t vj = 25c v ges repetitive peak forward current v cesat charakteristische werte / characteristic values periodischer spitzenstrom v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung rms, f= 50hz, t= 1min transistor wechselrichter / transistor inverter kv v ces v v isol v a2s w i2t 2,5 technische information / technical information fs15r06xl4 igbt-module igbt-modules gate emitter spitzenspannung gate schwellenspannung gate emitter peak voltage dauergleichstrom kollektor emitter s?ttigungsspannung dc forward current insulation test voltage i2t value dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25 c a repetitive peak collector current periodischer kollektor spitzenstrom p tot t c = 25c, transistor gesamt verlustleistung total power dissipation t p = 1ms, t c = 75 c t p = 1ms i frm a a i crm 6,5 grenzlastintegral 34 i f collector emitter saturation voltage 0,4 v ge = 15v, t vj = 25c, i c = i c,nom v ge = 15v, t vj = 125c, i c = i c,nom ma 4,5 - v nf 0,675 - 0,08 - c 5,5 - - na gate emitter leakage current gate emitter reststrom i ges - 400 v ge(th) c ies i ces 600 30 81 + 20 15 30 -5ma 1 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules min. typ. max. i c = 15 18 - 20 - ns 18 - 21 - ns i c = 15 18 - 7 - ns 18 - 8 - ns i c = 15 18 - 80 - ns 18 - 110 - ns i c = 15 18 - 18 - ns 18 - 25 - ns i c = 15 r g = 18 15 nh i c = 15 r g = 18 15 nh v cc = i f = 15 - 1,4 2 v i f = 15 - 1,35 - v i f = 15 a/s v r = -36- a v r = -37- a i f = 15 a/s v r = - 0,9 - c v r = - 1,4 - c i f = 15 a/s v r = - 0,25 - mj v r = - 0,35 - mj rckstromspitze peak reverse recovery current 300 v 300 v, v ge = -10v, t vj = 25c 300 v 300 v, v ge = -10v, t vj = 125c charakteristische werte / characteristic values 300 v ? , t vj = 125c ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c ? , t vj = 125c v 300 a, v cc = a, v ge = 0v, t vj = 25c a, v ge = 0v, t vj = 125c ? , t vj = 125c v ge = 15v, r g = v ge = 15v, r g = ? , t vj = 25c a, v cc = 300 einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) lead resistance, terminal-chip v f forward voltage a, v cc = e off 300 v a, v cc = v ge = 15v, r g = anstiegszeit (induktive last) rise time (inductive load) t r a, v cc = 300 v v ge = 15v, r g = ? , t vj = 25c v ge = 15v, r g = abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) einschaltverlustenergie pro puls 2000 300 v, v ge = -10v, t vj = 25c a, -di f /dt = ? , t vj = 25c transistor wechselrichter / transistor inverter v ge = 15v, r g = m ? charakteristische werte / characteristic values mj -mj e on 0,45 t d,off - t f sc data leitungswiderstand, anschluss-chip a, v cc = ? , t vj = 125c, l = 360 v, v cemax =v ces -l ce |di/dt| ? , t vj = 125c, l = diode wechselrichter / diode inverter ausschaltenergie pro puls reverse recovery energy turn off energy loss per pulse v, v ge = -10v, t vj = 125c fallzeit (induktive last) fall time (inductive load) kurzschlussverhalten t p 10sec, v ge 15v, t vj = 125c, nh stray inductance module modulinduktivit?t l ce - 25 - a 68 - e rec i rm - - i sc - t d,on 300 v, v ge = -10v, t vj = 125c a, -di f /dt = 2000 - q r sperrverz?gerungsladung recovered charge durchlassspannung - 0,30 8 turn on energy loss per pulse ausschaltverlustenergie pro puls r cc/ee t c = 25c a, -di f /dt = 2000 300 v, v ge = -10v, t vj = 25c 2 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules min. typ. max. - - 1,55 k/w - - 2,70 k/w - 1,90 - k/w - 3,20 - k/w - 0,65 - k/w - 0,85 - k/w creepage distance innere isolation internal insulation cti comperative tracking index f t c = 25c p 25 power dissipation thermal resistance, junction to heatsink; dc h?chstzul?ssige sperrschichttemp. thermische eigenschaften / thermal properties r thch bergangs-w?rmewiderstand, dc thermal resistance, case to heatsink, dc -5 - 5 verlustleistung t c = 100c, r 100 = 493 ? ? r/r deviation of r 100 - - abweichung von r 100 w?rmewiderstand; dc % - 5 r 25 k ? - t c = 25c rated resistance charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand 20 -- -40 - 125 - 3375 - 150 mw k paste = 1 w/m*k / grease = 1 w/m*k transistor wechselr. / transistor inverter diode wechselrichter / diode inverter r thjc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter paste = 1 w/m*k / grease = 1 w/m*k b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 t vjmax b-value innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechselr. / transistor inverter diode wechselrichter / diode inverter r thjh -40 weight lagertemperatur gewicht kriechstrecke anschluss - khlk?rper 20..50 mechanische eigenschaften / mechanical properties mm - 125 c g n 25 operation temperature maximum junction temperature betriebstemperatur terminal to terminal anschluss - anschluss terminal to heatsink storage temperature 10,5 anschluss - anschluss luftstrecke anschluss - khlk?rper anpresskraft pro feder mounting force per clamp terminal to terminal clearance distance terminal to heatsink mm mm 5mm 5 9 225 c g al 2 o 3 t stg t op c 3 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules i c = f(v ce ) v ge = 15v t vj = 125c output characteristic (typical) a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) ausgangskennlinie (typisch) output characteristic (typical) 0 10 20 30 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v 4 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward characteristic of inverse diode (typical) bertragungscharakteristik (typisch) transfer characteristic (typical) 0 10 20 30 5678910111213 v ge [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules schaltverluste (typisch) switching losses (typical) schaltverluste (typisch) switching losses (typical) e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge = 15v, r gon =r goff = 18 ? , v ce = 300v, t vj = 125c e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge = 15v, i c = 15a, v ce = 300v, t vj = 125c 0 0,5 1 1,5 0 5 10 15 20 25 30 i c [a] e [mj] eon eoff erec 0 0,2 0,4 0,6 0,8 1 1,2 0 20 40 60 80 100 120 140 160 180 r g [ ? ] e [mj] eon eoff erec 6 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules transienter w?rmewiderstand transient thermal impedance i r i [k/kw]: igbt i [s]: igbt r i [k/kw]: diode i [s]: diode sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, t j =125c, r g = 18 ? 192,0 640,0 z thjh = f (t) 23 1064,0 0,00031 0,00484 0,10644 0,14203 1 114,0 0,000379 0,00745 380,0 0,11319 1792,0 4 342,0 0,16026 576,0 0 10 20 30 40 0 200 400 600 v ce [v] i c [a] ic, chip ic, modul 0,10 1,00 10,00 0,001 0,01 0,1 1 10 t (s) z thjh (k/w) zth:igbt zth:diode 7 (8)
vorl?ufige daten preliminary data technische information / technical information fs15r06xl4 igbt-module igbt-modules mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. schaltbild circuit diagram ? geh?usema?e package outline bohrplan drilling layout 8 (8)
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