1/5 preliminary data august 2002 stsa851 STSA851-AP low voltage fast-switching npn power transistor n very low collector to emitter saturation voltage n high current gain characteristic n fast switching speed applications: n emergency lighting n voltage regulators n relay drivers n high efficiency low voltage switching circuits description the device is manufactured in npn planar technology by using a base island layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. absolute maximum ratings ordering code marking shipment stsa851 STSA851-AP sa851 sa851 bulk ammopack symbol parameter value unit v cbo collector-base voltage (i e = 0) 150 v v ceo collector-emitter voltage (i b = 0) 60 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 5 a i cm collector peak current (t p < 5 ms) 20 a i b base current 1 a i bm base peak current (t p < 5 ms) 2a p tot total dissipation at t amb = 25 c 1.1 w t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-92 internal schematic diagram
stsa851 / STSA851-AP 2/5 thermal data electrical characteristics (t j = 25 c unless otherwise specified) * pulsed: pulse duration = 300 s, duty cycle = 1.5 %. r thj-amb thermal resistance junction-ambient max 114 c/w symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 120 v v cb = 120 v t j = 100 c 50 1 na m a i ebo emitter cut-off current (i c = 0) v eb = 7 v 10 na v (br)cbo * collector-base breakdown voltage (i e = 0) i c = 100 m a 150 v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i e = 10 ma 60 v v (br)ebo * emitter-base breakdown voltage (i c = 0) i c = 100 m a7v v ce(sat) * collector-emitter saturation voltage i c = 100 ma i c = 1 a i c = 2 a i c = 5 a i b = 5 ma i b = 50 ma i b = 50 ma i b = 200 ma 10 70 140 320 50 120 200 450 mv mv mv mv v be(sat) * base-emitter saturation voltage i c = 4 a i b = 200 ma 1 1.15 v v be(on) * base-emitter on voltage i c = 4 a v ce = 1 v 0.89 1 v h fe * dc current gain i c = 10 ma i c = 2 a i c = 5 a i c = 10 a v ce = 1 v v ce = 1 v v ce = 1 v v ce = 1 v 150 150 90 30 300 270 140 50 350 c cbo collector-base capacitance v cb = 10 v f = 1 mhz 50 pf t on t s t f resistive load turn-on time storage time fall time i c = 1 a i b1 = -i b2 = 100 ma v cc = 10 v 50 1.35 120 ns s ns
3/5 stsa851 / STSA851-AP dim. mm. inch min. typ. max. min. typ. max. a 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 d 4.45 4.95 0.175 0.195 e 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 l 12.70 15.49 0.500 0.610 r 2.16 2.41 0.085 0.095 s1 0.92 1.52 0.036 0.060 w 0.41 0.56 0.016 0.022 v5 5 to-92 bulk shipment mechanical data
stsa851 / STSA851-AP 4/5 dim. mm. inch min. typ. max. min. typ. max. a1 4.80 0.189 t 3.80 0.150 t1 1.60 0.063 t2 2.30 0.091 d 0.48 0.019 p0 12.50 12.70 12.90 0.492 0.500 0.508 p2 5.65 6.35 7.05 0.222 0.250 0.278 f1, f2 2.44 2.54 2.94 0.096 0.100 0.116 delta h -2.00 2.00 -0.079 0.079 w 17.50 18.00 19.00 0.689 0.709 0.748 w0 5.70 6.00 6.30 0.224 0.236 0.248 w1 8.50 9.00 9.25 0.335 0.354 0.364 w2 0.50 0.020 h 18.50 20.50 0.728 0.807 h0 15.50 16.00 16.50 0.610 0.630 0.650 h1 25.00 0.984 d0 3.80 4.00 4.20 0.150 0.157 0.165 t 0.90 0.035 l 11.00 0.433 l1 3.00 0.118 delta p -1.00 1.00 -0.039 0.039 to-92 ammopack shipment (suffix -ap) mechanical data
5/5 stsa851 / STSA851-AP information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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