4 mm oval precision optical performance led lamps data sheet features ? well defined spatial radiation pattern ? viewing angle: major axis 120 minor axis 60 ? high luminous output ? two red and amber intensity levels alingap (bright) and alingap ii (brightest) ? colors 626/630 nm red 590/592 nm amber ? superior resistance to moisture ? uv resistant epoxy benefits ? viewing angle designed for wide field of view applications ? superior performance for outdoor environments applications ? full color signs description these precision optical perfor- mance oval leds are specifically designed for full color/video and passenger information signs. the oval shaped radiation pattern (60 x 120 ) and high luminous intensity ensure that these de- vices are excellent for wide field of view outdoor applications where a wide viewing angle and readability in sunlight are essen- tial. these lamps have very smooth, matched radiation pat- terns ensuring consistent color mixing in full color applications, message uniformity across the viewing angle of the sign. high efficiency led materials are used in these lamps: aluminum indium gallium phosphide (alingap) for red and amber color. there are two families of red and amber lamps, alingap and the higher performance alingap ii. each lamp is made with an advanced optical grade epoxy offering superior high tem- perature and high moisture resis- tance in outdoor applications. the package epoxy contains both uv-a and uv-b inhibitors to reduce the effects of long term exposure to direct sunlight. designers can select parallel (where the axis of the leads is parallel to the wide axis of the oval radiation pattern) or perpen- dicular orientation. both lamps are available in tinted version. sunpower series agilent hlmp-rg10, hlmp-sg10, hlmp-rl10, hlmp-sl10, HLMP-RD11, hlmp-sd11, hlmp-rl11, hlmp-sl11
2 package dimensions 4.0 ?0.20
(0.157 ?0.008) 1.05 ?0.20
(0.041 ?0.008) 0.80
(0.016) max. epoxy meniscus 9.50 ?0.50
(0.374 ?0.020) 0.44 ?0.20
(0.017 ?0.008) cathode
lead a ? 6.30 ?0.20
(0.248 ?0.008) 2.54 ?0.30
(0.100 ?0.012) 21.0
(0.827) min. 1.0
(0.039) min. 0.40 +0.10 ? (0.016 +0.004 ?.000) 0.45 +0.10 ?.04 (0.018 +0.004 ?.002) 4.0 ?0.20
(0.157 ?0.008) 1.05 ?0.20
(0.041 ?0.008) 0.80
(0.016) max. epoxy meniscus 9.50 ?0.50
(0.374 ?0.020) 0.44 ?0.20
(0.017 ?0.008) cathode
lead b ? 6.30 ?0.20
(0.248 ?0.008) 2.54 ?0.30
(0.100 ?0.012) 21.0
(0.827) min. 1.0
(0.039) min. 0.40 +0.10 ? (0.016 +0.004 ?.000) 0.45 +0.10 ?.04 (0.018 +0.004 ?.002) dimensions are in millimeters (inches).
3 notes: 1. the luminous intensity is measured on the mechanical axis of the lamp package. 2. the optical axis is closely aligned with the package mechanical axis. 3. the dominant wavelength l d is derived from the cie chromaticity diagram and represents the color of the lamp. device selection guide for alingap ii color and luminous dominant intensity wavelength i v (mcd) at 20 ma leads with leadframe package part number l d (nm) typ. min. max. stand-offs orientation drawing hlmp-sd11-lp000 red 630 345 1330 yes perpendicular a HLMP-RD11-lp000 red 630 345 1330 yes parallel b hlmp-sl11-lp000 amber 592 345 1330 yes perpendicular a hlmp-rl11-lp000 amber 592 345 1330 yes parallel b notes: 1. the luminous intensity is measured on the mechanical axis of the lamp package. 2. the optical axis is closely aligned with the package mechanical axis. 3. the dominant wavelength l d is derived from the cie chromaticity diagram and represents the color of the lamp. device selection guide for alingap color and luminous dominant intensity wavelength i v (mcd) at 20 ma leads with leadframe package part number l d (nm) typ. min. max. stand-offs orientation drawing hlmp-sg10-gk000 red 626 120 460 yes perpendicular a hlmp-rg10-gk000 red 626 120 460 yes parallel b hlmp-sl10-fj000 amber 590 96 360 yes perpendicular a hlmp-rl10-fj000 amber 590 96 360 yes parallel b
4 electrical/optical characteristics t a = 25 c parameter symbol min. typ. max. units test conditions typical viewing angle major 2 q 1/2 120 deg minor 60 forward voltage red ( l d = 626 nm) v f 1.9 2.4 v i f = 20 ma red ( l d = 630 nm) 2.0 2.4 amber ( l d = 590 nm) 2.02 2.4 amber ( l d = 592 nm) 2.15 2.4 reverse voltage v r 520 v i r = 100 m a amber and red peak wavelength l peak nm peak of wavelength of red ( l d = 626 nm) 635 spectral distribution red ( l d = 630 nm) 639 at i f = 20 ma amber ( l d = 590 nm) 592 amber ( l d = 592 nm) 594 absolute maximum ratings t a = 25 c parameter amber and red dc forward current [1] 50 ma peak pulsed forward current 70 ma average forward current 30 ma reverse voltage (i r = 100 m a) 5 v power dissipation 120 mw led junction temperature 130 c operating temperature range C40 c to +100 c storage temperature range C40 c to +120 c soldering temperature 260 for 5 sec note: 1. derate linearly as shown in figure 4. notes: 1. 2 q 1/2 is the off-axis angle where the luminous intensity is the on-axis intensity. 2. the radiant intensity, i e , in watts per steradian, may be found from the equation i e = i v / h v , where i v is the luminous intensity in candelas and h v is the luminous efficacy in lumens/watt. led indicators parameter symbol min. typ. max. units test conditions spectral halfwidth wavelength width at red ( l d = 626/630 nm) dl 1/2 17 nm spectral distribution amber ( l d = 590/592 nm) 17 1 / 2 power point at i f = 20 ma capacitance c 40 pf v f = 0, f = 1 mhz red and amber thermal resistance r q j-pin 240 c/w led junction-to-cathode red and amber lead luminous efficacy emitted luminous power/ red ( l d = 626 nm) h v 150 lm/w emitted radiant power red ( l d = 630 nm) 155 amber ( l d = 590 nm) 480 amber ( l d = 592 nm) 500
5 figure 4. maximum forward current vs. ambient temperature. i f ?forward current ?ma 0 0 t a ?ambient temperature ?? 40 80 50 40 30 20 10 20 60 100 r q j-a = 585?c/w 60 r q j-a = 780?c/w 120 figure 1. relative intensity vs. wavelength. figure 2. forward current vs. forward voltage. figure 3. relative luminous intensity vs. forward current. wavelength ?nm relative intensity 1.0 0.5 0 600 700 500 650 amber red 550 0 40 20 i f ?forward current ?ma v f ?forward voltage ?v 1.0 3.0 amber 1.5 2.0 2.5 10 30 50 red relative luminous intensity
(normalized at 20 ma) 0 0 i f ?forward current ?ma 20 40 2.0 1.0 50 0.5 1.5 2.5 30 10
www.semiconductor.agilent.com data subject to change. copyright ? 2000 agilent technologies inc. 5968-9083e (4/00) figure 5b. representative spatial radiation pattern for minor axis. relative intensity 1.0 0 angular displacement ?degrees 0.8 0.6 0.2 -90 0.4 -60 0 -30 15 45 90 -45 -15 30 60 -75 75 relative intensity 1.0 0 angular displacement ?degrees 0.8 0.6 0.2 -90 0.4 -60 0 -30 15 45 90 -45 -15 30 60 -75 75 intensity bin limits (mcd at 20 ma) bin name min. max. f 110 140 g 140 180 h 180 240 j 240 310 k 310 400 l 400 520 m 520 680 n 680 880 p 880 1150 tolerance for each bin limit is 15%. note: 1. bin categories are established for classification of products. products may not be available in all bin categories. figure 5a. representative spatial radiation pattern for major axis.
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