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h04-004-07 fuji electric co.,ltd. matsumoto factory specification device name : type name : spec. no. : igbt module 6MBI75UA-120 ms5f 5354 1 13 ms5f 5354 jan. 31 ?03 y.kobayashi t.miyasaka k.yamada t.fujihira jan. 31 ?03 a jan.- 31- ?03
h04-004-06 r e v i s e d r e c o r d s date classi- fication ind. content applied date drawn checked approved enactment issued date ms5f 5354 2 13 jan.- 31 - ?03 t.fujihira k.yamada t.miyasaka t.fujihira a y.kobayashi revision k.yamada t.miyasaka apr.-16-?03 a revised vf and cies (p4/13) revised reliability test method and conditions(p6.7.8/13) revised vf curve(p11/13)
h04-004-03 13 ms5f 5354 3 6MBI75UA-120 2. equivalent circuit 1. outline drawing ( unit : mm ) uv w 1 2 3 4 5 6 7 8 9 10 11 12 13,14 15,16 19,20 21,22 17 18 23,24 25,26 27,28 uv w 1 2 3 4 5 6 7 8 9 10 11 12 13,14 15,16 19,20 21,22 17 18 23,24 25,26 27,28 a a ( ) shows reference dimension.
h04-004-03 13 ms5f 5354 4 a 3.absolute maximum ratings ( at tc= 25 unless otherwise specified tc=25 tc=80 tc=25 tc=80 (*1) all terminals should be connected together when isolation test will be done. (*2) two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) recommendable value : 2.5~3.5 nm (m5) 4. electrical characteristics ( at tj= 25 unless otherwise specified) a (*)biggest internal terminal resistance among arm. turn-on time -4.1 ton tr vge=15v tr (i) turn-off time vge=15v ic = 75a collector-emitter saturation voltage input capacitance cies - v a 2.00 lead resistance, terminal-chip * m r lead a 2.30 s if = 75a vge=0v inverter ices vce(sat) ( terminal) - - toff tf rg = 9.1 vcc = 600v ic = 75a iges gate-emitter leakage current gate-emitter threshold voltage - -0.35 - a 1.80 2.80 tj=125 vf (terminal) - t =100 465 - 5000 reverse recovery time - vf (chip) tj= 25 - tj=125 forward on voltage 1200 ic icp 100 75 200 150 v 20 v items symbols conditions vces collector-emitter voltage vges ac : 1min. continuous 2500 vac n ? m -ic pluse pc tj a w 1 device 150 gate-emitter voltage collector current junction temperature collector power dissipation -ic 75 150 390 1ms units max. typ. screw torque - min. characteristics tstg mounting *3 3.5 conditions between terminal and copper base *1 between thermistor and others *2 storage temperature isolation voltage viso -40 +125 -- - 4.5 6.5 - vce = 20v items symbols vge=20v vce = 0v vge = 0v vge(th) ic = 75ma vce = 1200v zero gate voltage collector current na 1.0 ma v - 8.5 v 200 units - 1.75 2.1 maximum ratings - 2.05 2.40 -2.30 -0.03 -0.36 - - tj= 25 a 2.10 3.10 2.00 - 1.20 0.60 0.25 0.12 a 8 1.00 495 k 3305 3375 3450 520 - 0.07 0.30 nf s thermistor resistance r t = 25 b - b value t = 25/50 vce(sat) (chip) vce=10v,vge=0v,f=1mhz - - - - if = 75a tj= 25 tj=125 tj= 25 tj=125
h04-004-03 13 ms5f 5354 5 a 5. thermal resistance characteristics this is the value which is defined mounting on the additional cooling fin with thermal compo und. 6. indication on module 7.applicable category this specification is applied to igbt module named 6MBI75UA-120 . 8.storage and transportation notes ? the module should be stored at a standard temperature of 5 to 35 and humidity of 45 to 75% . ? store modules in a place with few temperature changes in order to avoid condensation on the module surface. ? avoid exposure to corrosive gases and dust. ? avoid excessive external force on the module. ? store modules with unprocessed terminals. ? do not drop or otherwise shock the modules when transporting. 9. definitions of switching time 10. packing and labeling display on the packing box - logo of production - type name - lot no - products quantity in a packing box lot.no. place of manufacturin g (code ) items symbols conditions characteristics units min. typ. max. - thermal resistance(1device) contact thermal resistance rth(j-c) rth(c-f) with thermal compound ( ) - -0.05 /w 75a 1200v 6MBI75UA-120 -0.32 - - 0.73 igbt fwd l vcc ic v ce r g v ge v ge v ce ic 0v 0a 0v 1 0% 90% 1 0% 1 0% 90% 90% 0v ic v ce on on on on t t t t r r r r t t t t r(i) r(i) r(i) r(i) t t t t off off off off t t t t f f f f t t t t rr rr rr rr i i i i rr rr rr rr t t t t
h04-004-03 13 ms5f 5354 11. reliability test results 6 a reliabilit y test items test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 terminal strength pull force : 20n test method 401 5 ( 1 : 0 ) (pull test) test time : 101 sec. method 2 mounting strengt h screw torque : 2.5 ~ 3.5 n ? m (m5) test method 402 5 ( 1 : 0 ) test time : 101 sec. method 3 vibration range of frequency : 10 ~ 500hz test method 403 5 ( 1 : 0 ) sweeping time : 15 min. reference 1 acceleration : 100m/s 2 condition code b sweeping direction : each x,y,z axis test time : 6 hr. (2hr./direction) 4 shock maximum accelerati o : 5000m/s 2 test method 404 5 ( 1 : 0 ) pulse width : 1.0msec. condition code b direction : each x,y,z axis test time : 3 times/direction 5 solderabitlity solder temp. : 2355 test method 303 5 ( 1 : 0 ) immersion time : 50.5sec. condition code a test time : 1 time each terminal should be immersed in solder within 1~1.5mm from the body. 6 resistance to solder temp. : 2605 test method 302 5 ( 1 : 0 ) soldering heat immersion time : 101sec. condition code a test time : 1 time each terminal should be immersed in solder within 1~1.5mm from the body. 1 high temperature storage temp. : 1255 test method 201 5 ( 1 : 0 ) storage test duration : 1000hr. 2 low temperature storage temp. : -405 test method 202 5 ( 1 : 0 ) storage test duration : 1000hr. 3 temperature storage temp. : 852 test method 103 5 ( 1 : 0 ) humidity relative humidity : 855% test code c storage test duration : 1000hr. 4 unsaturated test temp. : 120 2 test method 103 5 ( 1 : 0 ) pressure cooker atmospheric pressur e : 1.7 10 5 pa test code e test humidity : 855% test duration : 96hr. 5 temperature test method 105 5 ( 1 : 0 ) cycle test temp. : low temp. -40 5 high temp. 125 5 rt 5 ~ 35 dwell time : high ~ rt ~ low ~ rt 1hr. 0.5hr. 1hr. 0.5hr. number of cycles : 100 cycles 6 thermal shock +0 test method 307 5 ( 1 : 0 ) test temp. : high temp. 100 - 5 method +5 condition code a low temp. 0 - 0 used liquid : water with ice and boiling water dipping time : 5 min. par each temp. transfer time : 10 sec. number of cycles : 10 cycles mechanical tests environment tests a
h04-004-03 13 ms5f 5354 7 failure criteria item characteristic symbol failure criteria unit note lower limit upper limit electrical leakage current ices - usl2 ma characteristic iges - usl2 a gate threshold voltage vge(th) lsl0.8 usl1.2 ma saturation voltage vce(sat) - usl1.2 v forward voltage vf - usl1.2 v thermal igbt ? vge - usl1.2 mv resistance or ? vce fwd ? vf - usl1.2 mv isolation voltage viso broken insulation - visual visual inspection inspection peeling - the visual sample - plating and the others lsl : lower specified limit. usl : upper specified limit. note : each parameter measurement read-outs shall be made after stab ilizing the com ponents at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. each parameter measurement read-outs shall be made after stab ilizing the com ponents at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. a reliabilit y test items test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 high temperature test method 101 5 ( 1 : 0 ) reverse bias test temp. : ta = 125 5 ( t j Q 150 ) bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 2 high temperature test method 101 5 ( 1 : 0 ) bias ( for g ate ) test temp. : ta = 125 5 ( t j Q 150 ) bias voltage : vc = vge = +20v or -20v bias method : applied dc voltage to g-e vce = 0v test duration : 1000hr. 3 temperature test method 102 5 ( 1 : 0 ) humidity bias test temp. : 85 2 o c condition code c relative humidity : 85 5% bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 4 intermitted on time : 2 sec. test method 106 5 ( 1 : 0 ) operating life off time : 18 sec. (power cycle) test temp. : ? t j =1005 de g ( for igbt ) t j Q 150 , ta=255 number of cycles : 15000 cycles endurance tests endurance tests a
h04-004-03 13 ms5f 5354 8 a reliability test results test cate- gorie s test items reference norms eiaj ed-4701 (aug.-2001 edition) number of test sample number of failure sample 1 terminal strength test method 401 50 (pull test) method 2 mounting strength test method 402 50 method 3vibration test method 403 50 condition code b 4 shock test method 404 50 condition code b 5 solderabitlity test method 303 50 condition code a 6 resistance to soldering heat test method 302 50 condition code a 1 high temperature storage test method 201 50 2 low temperature storage test method 202 50 3 temperature humidity test method 103 50 storage test code c 4 unsaturated test method 103 50 pressure cooker test code e 5 temperature cycle test method 105 50 6 thermal shock test method 307 50 method condition code a 1 high temperature reverse bias test method 101 50 2 high temperature bias test method 101 50 ( for gate ) 3 temperature humidity bias test method 102 50 condition code c 4 intermitted operating life test method 106 50 (power cycling) ( for igbt ) mechanical tests environment tests endurance tests mechanical tests environment tests endurance tests a
h04-004-03 13 ms5f 5354 9 a collector current vs. collector-emitter voltage tj= 125 / chip capacitance vs. collector-emitter voltage (typ.) dynamic gate charge (typ.) collector current vs. collector-emitter voltage tj= 25 / chip collector-emitter voltage vs. gate-emitter voltage collector current vs. collector-emitter voltage vge=15v (typ.) / chip tj=25 ? c / chip vge=0v, f= 1mhz, tj= 25 vcc=600v ic=75a tj= 25 0 50 100 150 200 0.0 1.0 2.0 3.0 4.0 5.0 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 50 100 150 200 0.0 1.0 2.0 3.0 4.0 5.0 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 50 100 150 200 0.0 1.0 2.0 3.0 4.0 collector current : ic [a] collector-emitter voltage : vce [v] tj=125 tj=25 0.0 2.0 4.0 6.0 8.0 10.0 5.0 10.0 15.0 20.0 25.0 collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] ic=150a ic=75a ic= 37.5a 0.1 1.0 10.0 100.0 0.0 10.0 20.0 30.0 capacitance : cies, coes, cres [ nf ] collector-emitter voltage : vce [v] cies coes cres 0 100 200 300 400 collector-emitter voltage : vce [ 200v/div ] gate - emitter voltage : vge [ 5v/div ] gate charge : qg [ nc ] 0 vge vce
h04-004-03 13 ms5f 5354 10 +vge=15v,-vge Q 15v, rg R 9.1 ? ,tj Q 125 switching loss vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? switching loss vs. gate resistance (typ.) switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? , tj= 25 vcc=600v, ic=75a, vge=15v, tj= 25 switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=9.1 ? , tj=125 switching time vs. gate resistance (typ.) vcc=600v, ic=75a, vge=15v, tj= 125 reverse bias safe operating area 10 100 1000 0 50 100 150 200 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] toff ton tr tf 10 100 1000 0 50 100 150 200 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] ton tr tf toff 10 100 1000 10000 1.0 10.0 100.0 1000.0 switching time : ton, tr, toff, tf [ nsec ] gate resistance : rg [ ? ] tr tf toff ton 0.0 5.0 10.0 15.0 20.0 0 50 100 150 200 switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] eon(125 ) eon ( 25 ) eoff(125 ) err(125 ) err(25 ) eoff(25 ) 0.0 10.0 20.0 1.0 10.0 100.0 1000.0 switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ ? ] eoff err eon 0 50 100 150 200 0 400 800 1200 collector current : ic [ a ] collector - emitter voltage : vce [ v ] a
h04-004-03 13 ms5f 5354 transient thermal resistance reverse recovery characteristics (typ.) vcc=600v, vge=15v, rg=9.1 forward current vs. forward on voltage (typ.) chip temperature characteristic (typ.) 0 25 50 75 100 125 0.00 1.00 2.00 3.00 4.00 forward current : if [ a ] forward on voltage : vf [ v ] tj=125 tj=25 10 100 1000 0 50 100 150 200 reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] forward current : if [ a ] trr (125 ) irr (125 ) trr (25 ) irr (25 ) 0.001 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 thermal resistanse : rth(j-c) [ /w ] pulse width : pw [ sec ] fwd igbt 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 temperature [ ] resistance : r [ k ] 11 a a
h04-004-03 13 ms5f 5354 12 a warnings warnings warnings warnings - this product shall be used within its absolute maximum rating (voltage, current, and temperature). this product may be broken in case of using beyond the ratings. u?~???R????? ~??????????? - connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction. ?]1??????]??u?gm?` ???``???? - use this product after realizing enough working on environment and considering of product's reliab ility life. this product may be broken before target life of the system in case of using beyond the product's reliab ility life. u??h????u?m????u?m? u?m????????????? - if the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. ?C?????????h????u?C?Q??^ ?? - use this product within the power cycle curve (technical rep.no. : mt5f12959) u???``? ( gY no.: mt5f 1 2959) - never add mechanical stress to deform the main or control terminal. the deformed terminal may cause poor contact problem. ??????????????? ? - according to the outline drawing, select proper length of screw for main terminal. longer screws may break the case. u?????L???x ?L?`?p?? - use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. also keep the tightening torque within the limits of this specification. improper handling may cause isolation breakdown and this may lead to a critical accident. ??????g??? 100mm 100um ?? 10um ?`??Q ???~F????1??k??? - it shall be confirmed that igbt's operating locus of the turn-off voltage and current are within the rbsoa specification. this product may be broken if the locus is out of the rbsoa. `???R???E rbsoa ?????_J rbsoa ???????? - if excessive static electricity is applied to the control terminals, the devices may be broken. implement some countermeasures against static electricity. ?^??????????? ?Qr????g? a - never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. the module structure may be broken. ????g?H???^??? ????? a - in case of insufficient -vge, erroneous turn-on of igbt may occur. -vge shall be set enough value to prevent this malfunction. (recommended value : -vge = -15v) `?R -vge ??`????? `???? -vge ???O?X : -vge = - 1 5v) a - in case of higher turn-on dv/dt of igbt, erroneous turn-on of opposite arm igbt may occur. use this product in the most suitable drive conditions, such as +vge, -vge, rg to prevent the malfunction. `?? dv/dt ??``????? `????m?? +vge, -vge, rg ???
h04-004-03 13 ms5f 5354 13 cautions cautions cautions cautions - fuji electric is constantly making every endeavor to improve the product quality and reliab ility. however, semiconductor products may rarely happen to fail or malfunction. to prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the fuji electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. ??C?~u??|m??????u???k? `????Cu?u???`Y?1? ???b?p??p????LO????O??`?O? ???_?v - the application examples described in this specification only explain typical ones that used the fuji electric products. this specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. ??d????Cu?????h??? ???I??g??????g??SZ??? - the product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. when you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliab ility. ??d?u?????r??C?????? ???O??u????????u??IC?C? @C??????????H?????| ?????_J? if there is any unclear matter in this specification, please contact fuji electric co.,ltd. a

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