? semiconductor components industries, llc, 2001 may, 2001 rev. 4 1 publication order number: 1.5smc6.8at3/d 1.5smc6.8at3 series 1500 watt peak power zener transient voltage suppressors unidirectional* the smc series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smc series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.8 to 77.8 v ? standard zener breakdown voltage range 6.8 to 91 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? maximum temperature coefficient specified ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by molded polarity notch mounting position: any maximum ratings please see the table on the following page plastic surface mount zener overvoltage transient suppressors 5.878 volts 1500 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1.5smcxxxat3 smc 2500/tape & reel smc case 403 plastic http://onsemi.com cathode anode y = year ww = work week xxxa = specific device code = (see table on page 3) yww xxxa marking diagram *bidirectional devices will not be available in this series. 2the at3o suffix refers to a 13 inch reel.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1.5smc6.8at3 series http://onsemi.com 2 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 1500 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 4.0 54.6 18.3 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.75 6.1 165 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 200 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note ) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f 5. 1/2 sine wave or equivalent, pw = 8.3 ms nonrepetitive duty cycle
1.5smc6.8at3 series http://onsemi.com 3 electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br volts (note 7.) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts amps %/ c 1.5smc6.8at3 1.5smc7.5at3 1.5smc8.2at3 1.5smc9.1at3 6v8a 7v5a 8v2a 9v1a 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 143 132 124 112 0.057 0.061 0.065 0.068 1.5smc10at3 1.5smc11at3 1.5smc12at3 1.5smc13at3 10a 11a 12a 13a 8.55 9.4 10.2 11.1 10 5 5 5 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 14.5 15.6 16.7 18.2 103 96 90 82 0.073 0.075 0.078 0.081 1.5smc15at3 1.5smc16at3 1.5smc18at3 1.5smc20at3 15a 16a 18a 20a 12.8 13.6 15.3 17.1 5 5 5 5 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 71 67 59.5 54 0.084 0.086 0.088 0.09 1.5smc22at3 1.5smc24at3 1.5smc27at3 1.5smc30at3 22a 24a 27a 30a 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 49 45 40 36 0.092 0.094 0.096 0.097 1.5smc33at3 1.5smc36at3 1.5smc39at3 1.5smc43at3 33a 36a 39a 43a 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 33 30 28 25.3 0.098 0.099 0.1 0.101 1.5smc47at3 1.5smc51at3 1.5smc56at3 1.5smc62at3 47a 51a 56a 62a 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 23.2 21.4 19.5 17.7 0.101 0.102 0.103 0.104 1.5smc68at3 1.5smc75at3 1.5smc82at3 1.5smc91at3 68a 75a 82a 91a 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 16.3 14.6 13.3 12 0.104 0.105 0.105 0.106 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 3 of the general data 1500 watt at the beginning of this group.
1.5smc6.8at3 series http://onsemi.com 4 nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp figure 2. pulse waveform figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . d v br , instantaneous increase in v br above v br (nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 1000 500 200 100 50 1 2 5 10 20 t l =25 c t p =10 m s v br (nom)=6.8to13v 20v 24v 43v 75v 120v 180v figure 4. dynamic impedance p pk , peak power (kw) t r 10 m s i t , test current (amps) ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
1.5smc6.8at3 series http://onsemi.com 5 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 5. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 6. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smc series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1.5smc6.8at3 series http://onsemi.com 6 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 5. figure 6. figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms typical protection circuit v in v l z in load
1.5smc6.8at3 series http://onsemi.com 7 outline dimensions 1500 watt peak power transient voltage suppressors surface mounted smc case 40303 issue b s a db j p k h c dim min max min max millimeters inches a 0.260 0.280 6.60 7.11 b 0.220 0.240 5.59 6.10 c 0.075 0.095 1.90 2.41 d 0.115 0.121 2.92 3.07 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.305 0.320 7.75 8.13 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. smc footprint 0.171 4.343 0.110 2.794 0.150 3.810 mm inches
1.5smc6.8at3 series http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 1.5smc6.8at3/d surmetic is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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