DIM300BSS12-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com pds5703-1.2 january 2004 features trench gate field stop technology low conduction losses low switching losses 10 s short circuit withstand applications motor drives wind turbines ups systems the powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600v to 3300v and currents up to 3600a. the DIM300BSS12-E000 is a single switch 1700v, n channel enhancement mode, insulated gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM300BSS12-E000 note: when ordering, please use the complete part number. key parameters v ces 1200v v ce(sat) (typ) 1.7v i c (max) 300a i c(pk) (max) 600a DIM300BSS12-E000 single switch igbt module fig. 1 single switch circuit diagram fig. 2 module outline outline type code: b (see package details for further information) 2(e) 3(g 1 ) 1(c) 5(e 1 ) 4(c 1 )
DIM300BSS12-E000 2/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com absolute maximum ratings stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety prec autions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise test conditions v ge = 0v - t case = 70?c 1ms, t case = 115?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 1300v, v 2 = 1000v, 50hz rms symbol v ces v ges i c i c(pk) p max i 2 t v isol q pd units v v a a kw ka 2 s v pc max. 1200 20 300 600 1.4 11.3 2500 10 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value isolation voltage - per module partial discharge - per module
DIM300BSS12-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/8 www.dynexsemi.com test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m3 electrical connections - m4 parameter thermal resistance - transistor thermal resistance - diode thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings internal insulation: al 2 o 3 clearance: 11mm baseplate material: cu cti (critical tracking index): 425 creepage distance: 20mm symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm nm max. 85 150 15 150 125 125 5 5 2 typ. - - - - - - - - min. - - - - - ?0 3 2.5 1.1
DIM300BSS12-E000 4/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c = 12ma, v ge = v ce v ge = 15v, i c = 300a v ge = 15v, i c = 300a, , t case = 125?c dc t p = 1ms i f = 300a i f = 300a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage input capacitance module inductance internal transistor resistance short circuit. i sc electrical characteristics t case = 25?c unless stated otherwise. symbol i ces i ges v ge(th) v ce(sat) i f i fm v f c ies l m r int sc data units ma ma a v v v a a v v nf nh m ? a a max. 0.5 2.5 2 6.5 2.15 2.5 300 600 2.15 2.15 - - - - - typ. - - - 5.8 1.7 2.0 - - 1.65 1.65 21 20 0.23 1200 tbd min. - - - 5.0 - - - - - - - - - - - note: l* is the circuit inductance + l m
DIM300BSS12-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/8 www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - - typ. 550 100 30 200 75 30 3 22 250 9 min. - - - - - - - - - - test conditions i c = 300a v ge = 15v v ce = 600v r g(on) = 6.8 ? r g(off) = 2.4 ? l ~ 100nh i f = 300a, v r = 600v, di f /dt = 4800a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e on q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 700 150 48 250 75 40 45 310 18 min. - - - - - - - - - test conditions i c = 300a v ge = 15v v ce = 600v r g(on) = 6.8 ? r g(off) = 2.4 ? l ~ 100nh i f = 300a, v r = 600v, di f /dt = 4400a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec note: switching characteristic measurements taken using standard driver circuit conditions.
DIM300BSS12-E000 6/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com typical characteristics fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 collector voltage, v ce - (v) 0 100 200 300 400 500 600 collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 125c 0 15 30 45 60 75 90 105 0200 100 400 300 500 600 collector current, i c - (a) switching energy, e sw - (mj) e on e off e rec conditions: t case = 125 c r g(on) = 6.8 ohms r g(off) = 2.4 ohms v cc = 600v 0 15 30 45 60 75 90 105 120 135 150 04 810 26 20 18 12 14 16 22 24 26 28 30 gate resistance, r g - (ohms) switching energy, e sw - (mj) e on e off e rec conditions: t case = 125 c i c = 300a v cc = 600v 0 50 100 150 200 250 300 350 400 450 500 550 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 collector voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 25c
DIM300BSS12-E000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 7/8 www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 i gbt reverse bias safe operating area fig. 9 di ode reverse bias safe operating area fig. 10 transient thermal impedance 0 100 200 300 400 500 600 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 1.6 2.2 2.0 2.4 forward voltage, v f - (v) forward current, i f - (a) t j = 125?c t j = 25?c 1 10 100 1000 0.001 0.01 0.1 1 10 time - (s) transient thermal impdeance, z th(j-c) - ( c/kw) igbt diode igbt r i (?c/kw) i (ms) diode r i (?c/kw) i (ms) 1 1.3567 0.0384 3.0346 0.0454 2 11.2520 1.2416 26.4678 1.5849 3 42.5741 36.5182 72.5743 3.7228 4 29.6753 109.4915 47.7163 94.0851 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 1400 collector emitter voltage, v ce - (v) collector current, i c - (a) t case = 125 ? c v ge = 15v r g(on) = 6.8 ohms r g(off) = 2.4 ohms module i c chip i c 0 100 200 300 400 500 0 200 400 600 800 1000 1200 1400 reverse voltage, v r - (v) reverse recovery current, i rr - (a) t j = 125 ? c
DIM300BSS12-E000 8/8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. fig. 11 package details nominal weight: 475g module outline type code: b 2(e) 3(g 1 ) 1(c) 5(e 1 ) 4(c 1 )
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 5 3 . fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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