sup/SUB85N02-06 vishay siliconix new product document number: 71287 s-01613erev. a, 24-jul-00 www.vishay.com faxback 408-970-5600 1 n-channel 20-v (d-s), 175 c mosfet
v (br)dss (v) r ds(on) ( ) i d (a) a 20 0.006 @ v gs = 4.5 v 85 20 0.009 @ v gs = 2.5 v 85 d g s n-channel mosfet to-220ab top view gds sup85n02-06 SUB85N02-06 to-263 s g top view drain connected to tab d
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 175 c) t c = 25 c i d 85 a a continuous drain current (t j = 175 c) t c = 100 c i d 75 a pulsed drain current i dm 240 a avalanche current i ar 30 repetitive avalanche energy b l = 0.1 mh e ar 45 mj power dissipation t c = 25 c p d 120 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit junction - to - ambient pcb mount (to-263) c r thja 40 c/w j unc ti on- t o- a m bi en t free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 1.25 notes: a. see soa curve for voltage derating. b. duty cycle 1%. c. when mounted on 1o square pcb (fr-4 material).
sup/SUB85N02-06 vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71287 s-01613erev. a, 24-jul-00
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v gate threshold voltage v gs(th) v ds = v gs , i ds = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zgvl dic i v ds = 20 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 125 c 50 a v ds = 20 v, v gs = 0 v, t j = 175 c 150 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 120 a dis os r i a v gs = 4.5 v, i d = 30 a 0.006 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 30 a, t j = 125 c 0.009 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 30 a, t j = 175 c 0.0111 v gs = 2.5 v, i d = 20 a 0.009 forward transconductance a g fs v ds = 5 v, i d = 30 a 20 s dynamic b input capacitance c iss v 0 v v 20 v f 1 mh 6600 f output capacitance c oss v gs = 0 v, v ds = 20 v, f = 1 mhz 1150 pf reversen transfer capacitance c rss 600 total gate charge c q g v10vv45vi85a 65 130 c gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 85 a 13 nc gate-drain charge c q gd 14 turn-on delay time c t d(on) 25 40 rise time c t r v dd = 10 v, r l = 0.12 120 180 ns turn-off delay time c t d(off) dd , l i d 85 a, v gen = 4.5 v, r g = 2.5 80 120 ns fall time c t f 100 150 source-drain diode ratings and characteristics (t c = 25 c) b pulsed current i sm 240 a forward voltage a v sd i f = 100 a, v gs = 0 v 1.2 1.5 v reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 45 100 ns notes: a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sup/SUB85N02-06 vishay siliconix new product document number: 71287 s-01613erev. a, 24-jul-00 www.vishay.com faxback 408-970-5600 3
0 3 6 9 12 0 30 60 90 120 150 0 40 80 120 160 0 20406080100 0 0.002 0.004 0.006 0.008 0.010 0 20406080100 0 20 40 60 80 100 120 0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c t c = 125 c v ds = 10 v i d = 50 a v gs = 2.5 v c rss t c = 55 c 25 c 125 c v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d i d drain current (a) 0 2000 4000 6000 8000 10000 0 4 8 12 16 20 c iss c oss v gs = 4.5, 4 v 3.5 v 3 v 2.5 v 2 v 1.5 v 1 v
sup/SUB85N02-06 vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71287 s-01613erev. a, 24-jul-00
0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 4.5 v i d = 30 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0
0 20 40 60 80 100 0 25 50 75 100 125 150 175 safe operating area v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.01 100 maximum avalanche drain current vs. ambient temperature t a case temperature ( c) drain current (a) i d 1 ms 10 s 100 s drain current (a) i d 1 0.1 limited by r ds(on) t a = 25 c single pulse 10 ms 100 ms dc 2 1 0.1 0.01 10 6 10 2 10 1 110 duty cycle = 0.5 0.2 0.1 0.05 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 10 3 0.02 single pulse
|
