SSG0410 n-ch enhancement mode power mosfet 3.8 a, 100 v, r ds(on) 158 m ? elektronische bauelemente 01-jun-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g ? ? gate ??? ? source drain ???? description the SSG0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. features ? simple drive requirement ? low gate charge ? fast switching characteristic marking maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current 3 i d @ t a = 25c 3.8 a i d @ t a = 70c 3.0 a pulsed drain current 1 i dm 8 a total power dissipation p d 2.5 w linear derating factor 0.02 w / c operating junction & stor age temperature range t j , t stg -55 ~ 150 c thermal resistance ratings thermal resistance junction-ambient 3 (max.) r ja 50 c / w sop-8 ref. millimete r ref. millimete r min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. 0410sc ????? ?? 1 s s s g d d d d ? = date code 2 3 4 5 6 7 8
SSG0410 n-ch enhancement mode power mosfet 3.8 a, 100 v, r ds(on) 158 m ? elektronische bauelemente 01-jun-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min typ max unit test condition drain-source breakdown voltage bv dss 100 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 1.0 - 3.0 v v ds =10v , i d =1ma forward transconductance g fs - 4 - s v ds =10v, i d =2.5a gate-source leakage current i gss - - 100 na v gs =20v drain-source leakage current(t j =25c) i dss - - 10 a v ds =100v, v gs =0v drain-source leakage current(t j =55c) - - 25 a v ds =100v, v gs =0v static drain-source on-resistance 2 r ds(on) - - 158 m ? v gs =10v, i d =2.7a - - 175 v gs =6v, i d =2.5a total gate charge 2 q g - 11.2 30 nc v ds =80v, i d =3.5a, v gs =5v gate-source chagre q gs - 4.4 - gate-drain (?miller?) change q gd - 3 - turn-on delay time 2 t d(on) - 9 - ns v ds =30v, v gs =10v i d =1a, r l =30 ? , r g =6 ? rise time t r - 9.4 - turn-off delay time t d(off) - 26.8 - fall time t f - 2.6 - input capacitance c iss - 975 1670 pf v ds =25v v gs =0v f=1mhz output capacitance c oss - 38 - reverse transfer capacitance c rss - 27 - source-drain diode forward on voltage 2 v sd - - 1.2 v i s =3.8a, v gs =0v notes 1. pulse width limited by max. junction temperature. 2. pulse width 300 s, duty cycle 2 QQ . 3. surface mounted on 1 in 2 copper pad of fr4 board 125 c / w when mounted on min. copper pad.
SSG0410 n-ch enhancement mode power mosfet 3.8 a, 100 v, r ds(on) 158 m ? elektronische bauelemente 01-jun-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSG0410 n-ch enhancement mode power mosfet 3.8 a, 100 v, r ds(on) 158 m ? elektronische bauelemente 01-jun-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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