p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s -20v/-2.8a r ds(on) = 56m w (typ.) @ v gs = -4.5v r ds(on) = 85m w (typ.) @ v gs = -2.5v r ds(on) = 106m w (typ.) @ v gs = -1.8v super high dense cell design reliable and rugged apm2301ca handling code temp. range package code package code a : sot-23 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel lead free code l : lead free device blank : original device apm2301ca: c01x xxxxx - date code lead free code n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . p ower management in notebook computer, portable equipment and battery powered systems. p channel mosfet sot-23 g s d
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 2 a b s o l u t e m a x i m u m r a t i n g s (t a = 25c unless otherwise noted) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 20 v gss gate - source voltage 12 v i d * continuous drain current - 2.8 b i dm * 300 m s pulsed drain current v gs = - 4.5 v - 1 2 a i s * diode continuous forward current - 1.3 a t j maxim um junction temperature 150 t stg storage temperature range - 55 to 150 c t a = 25 c 0.83 p d * maximum power dissipation t a =100 c 0. 3 w r q j a * thermal resistance - junction to ambient 1 5 0 c / w notes : *surface mounted on 1in 2 pad area, t 10sec. apm 2 301ca symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a - 20 v v ds = - 16v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs(th) gate thre shold voltage v ds = v gs , i ds = - 250 m a - 0.5 - 0.7 5 - 1 v i gss gate leakage current v gs = 12 v, v ds =0v 10 m a v gs = - 4.5v, i ds = - 2. 8 a 56 7 0 v gs = - 2.5v, i ds = - 2 a 85 1 15 r ds(on) a drain - source on - s tate resistance v gs = - 1.8v, i ds = - 1 a 1 06 165 m w v sd a diode f orward voltage i sd = - 1.3 a, v gs =0v - 0. 75 - 1.3 v gate charge characteristics b q g total gate charge 7 10 q gs gate - source charge 1.9 q gd gate - drain charge v ds = - 10 v, v gs = - 4.5 v, i d s = - 2. 8 a 1. 9 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 3 e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 2301ca symbol parameter test condition min. typ. max. unit dynamic characteristics b c iss input capacitance 580 c oss output capacitance 100 c rss reverse transfer capacitance v gs =0v, v ds = - 10v, f requency =1.0mhz 75 pf t d(on) turn - on d elay time 4 7 t r turn - on rise time 13 23 t d(off) turn - off delay time 35 63 t f turn - off fall time v dd = - 10v, r l = 1 0 w , i d s = 1 a, v gen = - 4.5v, r g = 6 w 20 36 ns t rr reverse recovery time 20 ns q rr reverse recovery charge i s d = - 2. 8 a , dl sd /dt = 100a/ s 7 n c notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 4 t y p i c a l c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) normalized effective transient 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t a =25 o c,v g =-4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 5 r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s drain-source on resistance - v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 -1.5v -2v -2.5v v gs = -3,-4, -5, -6, -7, -8, -9, -10v 0 2 4 6 8 10 12 20 40 60 80 100 120 140 160 180 v gs = -1.8v v gs = -4.5v v gs = -2.5v 1 2 3 4 5 6 7 8 9 10 30 40 50 60 70 80 90 100 i d = -2.8a -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 6 - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (nc) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 56m w v gs = -4.5v i ds = -2.8a 0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 frequency=1mhz crss coss ciss 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ds = -10v i ds = -2.8a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 7 p a c k a g i n g i n f o r m a t i o n sot-23 d e h e s e1 a a1 l c b 3 2 1 p h y s i c a l s p e c i f i c a t i o n s parameter inches dim min. max. min. max. a 1.00 1.30 0.039 0.051 a1 0.00 0.10 0.000 0.004 b 0.35 0.51 0.014 0.020 c 0.10 0.25 0.004 0.010 d 2.70 3.10 0.106 0.122 e 1.40 1.80 0.055 0.071 e1 1.90 typ 0.075 typ h 2.40 3.00 0.094 0.118 l 0.37 0.015 terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb, 100%sn). lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 8 r e f l o w c o n d i t i o n (ir/convection or vpr reflow) t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p x r e f l o w c o n d i t i o n sn - pb eutectic assembly pb - free assembly profile feature large body small body large body small body average ramp - up rate(t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds tsmax to t l - ramp - up rate 3 c/second max time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak temperature ( tp) 225 +0/ - 5 c 240 +0/ - 5 c 245 +0/ - 5 c 250 +0/ - 5 c time within 5 c of actual peak temperature (tp) 10 - 30 seconds 10 - 30 seconds 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topsi de of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 9 r e f l o w c o n d i t i o n pkg. thickness 3 2.5mm and all bags pkg. thickness < 2.5mm and pkg. volume 3 350mm 3 pkg. thickness < 2.5mm and pkg. volume < 350mm 3 convection 220 +5/ - 0 c convection 235 +5/ - 0 c vpr 215 - 219 c vpr 235 +5/ - 0 c ir/convection 220 +5/ - 0 c ir/convection 220 + 5/ - 0 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability mil - std - 883d - 2003 245 c,5 sec holt mil - std 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100% rh, 121 c tst mil - std 883d - 1011.9 - 65 c ~ 150 c, 200 cycles c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 a j b t2 t1 c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 a p m 2 3 0 1 c a w w w . a n p e c . c o m . t w 1 0 c a r r i e r t a p e & r e e l d i m e n s i o n s ( c o n t . ) application a b c j t1 t2 w p e 178 1 60 1.0 12.0 2.5 0.15 9.0 0.5 1.4 8.0 0.3 4.0 1.75 f d d1 po p1 ao bo ko t sot - 23 3.5 0.05 1.5 0.1 j 0.1min 4.0 2.0 0.05 3.1 3.0 1.3 0.2 0.03 c o v e r t a p e d i m e n s i o n s application carrier width cover tape width devices per reel sot - 23 8 5.3 3000 c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
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