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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SD424 description with to-3 package complement to type 2sb554 high power dissipation high collector-emitter breakdown voltage : v ceo =180v(min) applications power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 180 v v ceo collector-emitter voltage open base 180 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 1.5 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD424 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1a ;i b =0 180 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =10a; i b =1a 3.0 v v be base-emitter on voltage i c =10a ; v ce =5v 2.5 v i cbo collector cut-off current v cb =90v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =2a ; v ce =5v 40 140 c ob output capacitance i e =0 ; v cb =10v;f=1.0mhz 300 pf f t transition frequency i c =2a ; v ce =5v 5 mhz h fe classifications r o 40-80 70-140 savantic semiconductor product specification 3 silicon npn power transistors 2SD424 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
Price & Availability of 2SD424
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