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| savantic semiconductor product specification silicon npn power transistors 2SD1276 2SD1276a d escription with to-220fa package complement to type 2sb950 /950a high dc current gain high-speed switching applications for power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit 2SD1276 60 v cbo collector-base voltage 2SD1276a open emitter 80 v 2SD1276 60 v ceo collector- emitter voltage 2SD1276a open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 4 a i cm collector current-peak 8 a t c =25 40 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1276 2SD1276a c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2SD1276 60 v (br)ceo collector- emitter breakdown voltage 2SD1276a i c =30ma , i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =3a ;i b =12ma 2 v v cesat- collector-emitter saturation voltage i c =5a ;i b =20ma 4 v v be base-emitter voltage v ce =3v; i c =3a 2.5 v 2SD1276 v cb =60v ;i e =0 i cbo collector cut-off current 2SD1276a v cb =80v; i e =0 0.2 ma 2SD1276 v ce =30v; i b =0 i ceo collector cut-off current 2SD1276a v ce =40v; i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe-1 dc current gain i c =3a ; v ce =0.5v 1000 h fe-2 dc current gain i c =3a ; v ce =3v 2000 10000 f t transition frequency i c =0.5a; v ce =10v;f=1mhz 20 mhz switching times t on turn-on time 0.5 s t s storage time 4 s t f fall time i c =2a ;i b1 =8ma i b2 =-8ma;v cc =50v 1 s h fe-2 classifications q r 2000-5000 4000-10000 savantic semiconductor product specification 3 silicon npn power transistors 2SD1276 2SD1276a package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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