silicon npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9157 issue 1 page 1 of 2 2N3767 low saturation voltage high gain characteristics hermetic to66 metal package high reliability screening options available switching and medium power amplifier applications absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 100v v ceo collector ? emitter voltage 80v v ebo emitter ? base voltage 6.0v i c continuous collector current 4.0a i b base current 2.0a p t total power dissipation at t c = 25c 25w de-rate above t c = 25c 143mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. unit r jc thermal resistance, junction to case 7.0 c/w
silicon npn transistor 2N3767 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9157 issue 1 page 2 of 2 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. unit v (br)ceo (1) collector-emitter breakdown voltage i c = 100ma i b = 0 80 v i ceo collector-emitter cut off current v ce = 80v 500 i ebo emitter-base cut-off current v eb = 6.0v i c = 0 500 v ce = 100v v be = -1.5v 10 a v ce = 70v v be = -1.5v i cex collector-emitter cut-off current t a = 150c 1.0 ma i cbo collector-base cut-off current v cb = 100v i e = 0 10 a v be (1) base-emitter voltage v ce = 10v i c = 1.0a 1.5 v i c = 50ma v ce = 5v 30 i c = 500ma v ce = 5v 40 160 t a = -55c 13 h fe (1) dc current gain i c = 1.0a v ce = 10v 20 i c = 500ma i b = 50ma 1.0 v ce(sat) (1) collector-emitter saturation voltage i c = 1.0a i b = 100ma 2.5 v be(sat) (1) base-emitter saturation voltage i c = 1.0a i b = 100ma 1.5 v dynamic characteristics i c = 500ma v ce = 10v |h fe | magnitude of small-signal short-circuit current gain f = 10mhz 1.0 8.0 v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 50 pf t on turn on time v cc = 30v i c = 500ma 0.25 t off turn off time i b1 = 50ma i b2 = - i b1 2.5 s notes notes notes notes (1) pulse width 300us, 2% mechanical data dimensions in mm (inches) to66 (to - 213aa) metal package underside view underside view underside view underside view pin 1 - base pin 2 - emitter case - collector 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2
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