description: the central semiconductor CXTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 450 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 6.0 v collector current i c 300 ma power dissipation p d 1.2 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =400v 100 na i ces v ce =400v 500 na i ebo v be =4.0v 100 na bv cbo i c =100 a 450 v bv ces i c =100 a 450 v bv ceo i c =1.0ma 400 v bv ebo i e =10 a 6.0 v v ce(sat) i c =1.0ma, i b =0.1ma 0.40 v v ce(sat) i c =10ma, i b =1.0ma 0.50 v v ce(sat) i c =50ma, i b =5.0ma 0.75 v v be(sat) i c =10ma, i b =1.0ma 0.75 v CXTA44 surface mount npn silicon high voltage transistor sot-89 case central semiconductor corp. tm r2 ( 17-december 2001)
a c e g f h j k m l b r3 1 3 2 lead code: 1) emitter 2) collector 3) base central semiconductor corp. tm sot-89 case - mechanical outline CXTA44 surface mount npn silicon high voltage transistor r2 ( 17-december 2001) electrical characteristics: continued symbol test conditions min max units h fe v ce =10v, i c =1.0ma 40 h fe v ce =10v, i c =10ma 50 200 h fe v ce =10v, i c =50ma 45 h fe v ce =10v, i c =100ma 20 f t v ce =10v, i c =10ma, f=10mhz 20 mhz c ob v cb =20v, i e =0, f=1.0mhz 7.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz 130 pf
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