b02n7002 n-channel power mosfet how to rea c h us : e-ma il: info@ f una rt.com.hk hong kong headqu arter :unit c, 11/f, wing hang insur a nce build ing 11 wi ng k u t street, c e ntra l, hong k o ng tel: 852 25950393 fax : 852 25588160 shenzhen offi ce :room 4a0 08, 4/ f, sun asia e l ectronic c i ty , zhonghan g road ,shenzhen, china. tel: 86 755 6130 6688 fax : 86 755 6130 66 67 page 1 of 4 ? advanced proc ess technology ? ultra low on-r esistance provides higher efficiency ? avalanche e n er gy specified ? source- t o- drain diode recovery time compar able to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? idss and vds (on) specified at elevated te mperature descript ion absolute maximum ratings r a t i n g s y m b o l v a l u e u n i t drain source v o ltage v dss 6 0 v drain- gate voltage(r gs =1.0m ) v dgr 6 0 v drain to curren t ? co ntinuo us pulsed i d i dm 115 800 ma ma gate- t o- so urce vo ltage ? co ntinue non-repetitive v gs v gsm 20 40 v v total power dissipation derate abov e 25 p d 225 1.8 mw mw/ single pulse dr ain- to- s ource avalanche e n er gy ? t j = 25 (v dd = 50v, v gs = 10v, i as =0.8a, l = 30mh, r g =25 ) e as 9 . 6 m j operating and storage tempe r ature range t j , t st g -55 to 150 thermal resist ance ? junction to ambient ja 417 /w maximum lead temperature for soldering pu rpose, 1/8? from case for 10 s e conds t l 300 v dss = 60v i d = 115m a d g s s
b02n7002 n-channel power mosfet how to rea c h us : e-ma il: info@ f una rt.com.hk hong kong headqu arter :unit c, 11/f, wing hang insur a nce build ing 11 wi ng k u t street, c e ntra l, hong k o ng tel: 852 25950393 fax : 852 25588160 shenzhen offi ce :room 4a0 08, 4/ f, sun asia e l ectronic c i ty , zhonghan g road ,shenzhen, china. tel: 86 755 6130 6688 fax : 86 755 6130 66 67 page 2 of 4
b02n7002 n-channel power mosfet how to rea c h us : e-ma il: info@ f una rt.com.hk hong kong headqu arter :unit c, 11/f, wing hang insur a nce build ing 11 wi ng k u t street, c e ntra l, hong k o ng tel: 852 25950393 fax : 852 25588160 shenzhen offi ce :room 4a0 08, 4/ f, sun asia e l ectronic c i ty , zhonghan g road ,shenzhen, china. tel: 86 755 6130 6688 fax : 86 755 6130 66 67 page 3 of 4 typical electrical characteristics figure 5 : capacitanc e
b02n7002 n-channel power mosfet how to rea c h us : e-ma il: info@ f una rt.com.hk hong kong headqu arter :unit c, 11/f, wing hang insur a nce build ing 11 wi ng k u t street, c e ntra l, hong k o ng tel: 852 25950393 fax : 852 25588160 shenzhen offi ce :room 4a0 08, 4/ f, sun asia e l ectronic c i ty , zhonghan g road ,shenzhen, china. tel: 86 755 6130 6688 fax : 86 755 6130 66 67 page 4 of 4 important notice blu e e l ec tro n i c reserve s th e rig h t t o m a rk chang e t o it s p r od uc ts or d i sc on tin u e any p r od uct or serv ic e w i th ou t no ti ce, and ad vises it s c u st omer s to ob ta in th e late s t vers i o n of re leva nt i n f o rmati o n t o ver i f y , b e fore p l a c i n g ord e rs, t h at the i n for ma t i on b e ing relied on is curren t. a few ap p licat ion s usi n g p r od uct m a y inv o l v e p o te ntia l ri sk of d e a t h, p e rso n al in jur y , or se vere p r op erty or e n vir o nm enta l damage. b l ue el ec t r o n ic pro d uct are no t de si gn ed , i n ten d ed, au th ori z ed o r warran ted t o be s u i t ab l e for us e in l i f e -s up port app lica ti on s d e vice s or s y s t e m s or ot her cr it ic al ap p lica t io ns . use o f bl ue e l ec t r oni c p r od uc ts i n such ap p l i c at io n is und ers t o o d to b e ful ly a t the r i sk of th e cu st omer. in ord e r to min i mize ri sks a sso ci ated with the c u s t omer? s ap p lica t i o ns , the cus t om e r shou ld p r ovid e ad eq uate des i gn and o p era t i n g s a f e guards
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